AFT26H250W03SR6 - 50W RF LDMOS Transistor 2.5GHz 28V | NXP
N.º da peça: AFT26H250W03SR6 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1.320,00 |
| 100 | $118.5 | $11.850,00 |
| 500 | $105.2 | $52.600,00 |
| 1.000 | $96.4 | $96.400,00 |
AFT26H250W03SR6 Visão geral
What is an RF power LDMOS transistor? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET architecture engineered to deliver high RF output power at high efficiency and high gain. Within the power-semiconductor hierarchy, LDMOS transistors sit between standard power MOSFETs (used for switching) and GaN HEMTs (used at higher frequencies), with LDMOS dominating the sub-3 GHz cellular infrastructure segment because of its excellent linearity, ruggedness, and mature 28 V supply ecosystem. Airfast is NXP's brand name for this RF power portfolio.
Key differentiating features include 14.1 dB typical power gain at 2496 MHz, a 700 mA typical quiescent drain current bias point, and an internally matched input that simplifies PCB-level integration. The device is designed for 50 W average output power in Doherty and standard class-AB amplifier configurations used in 2.5 GHz LTE, TD-LTE, and WCDMA base-station deployments.
Technically, the device uses a high-voltage LDMOS die with integrated ESD protection and is specified for operation up to a maximum junction temperature of 225 C. Pins 1 and 2 are DC-coupled and RF-independent, providing flexible bias routing. The NI-1230-4S ceramic package offers low thermal resistance and is bolted directly to the heatsink, eliminating the need for external matching networks.
Typical applications include LTE and TD-LTE base-station power amplifiers in the 2.5 GHz band, repeaters and small-cell infrastructure, industrial RF heating, and aerospace RF links. Compared with discrete GaN solutions, this LDMOS part delivers lower cost at sub-3 GHz frequencies while still meeting the linearity required for modern modulation schemes.
When designing in this device, follow NXP's recommended thermal management: bolt the flange directly to a copper or aluminum heatsink with thermal compound, and ensure the gate bias network presents the documented quiescent current at idle. Never exceed 28 V on the drain, and keep the lead length to the drain matching network short to preserve the 14.1 dB of gain.
This page synthesizes distributor stock data, parametric nearest-equivalents, and practical RF design notes not consolidated in the manufacturer datasheet.
Alternativas drop-in para AFT26H250W03SR6 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
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✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AFT26P100N
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AFT27S010N
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AFT26H250W03SR6 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors |
| Part Status | Active |
| Tipo de transistor | RF Power LDMOS (N-Channel) |
| Frequency Range | 2496 MHz to 2690 MHz |
| Typical Gain | 14.1 dB at 2496 MHz |
| Output Power (Average) | 50 W |
| Test Supply Voltage (Drain) | 28 V |
| Typical Quiescent Drain Current (IDQ) | 700 mA |
| Configuration | Single (1 element) |
| Encapsulamento / Caixa | NI-1230-4S (NI-1230S-4S) |
| Maximum Operating Temperature | 225 C (junction) |
| Peak Reflow Temperature | 260 C |
| Maximum Time at Peak Reflow | 40 s |
| Nível de sensibilidade à umidade (MSL) | Not Applicable (air-cavity ceramic package) |
| Technology | LDMOS, Metal-Oxide Semiconductor |
Configuração de pinos do AFT26H250W03SR6
| Pino 1 | Gate / DC Path — DC-coupled pin (gate or DC bias, RF-independent per NXP datasheet) |
| Pino 2 | Gate / DC Path — DC-coupled pin (paired with pin 1, RF-independent) |
| Pino 3 | Source / Flange GND — Source and ground return via metal mounting flange |
| Pino 4 | Drain — RF drain output (28 V supply feed) |
Área de Operação Segura (LDMOS RF)
Aplicações típicas
AFT26H250W03SR6 é adequado para 6 aplicaçãos: LTE / TD-LTE Base Station Power Amplifiers (2496-2690 MHz), Doherty Main/Peak Pairs in Macro BTS, Small Cell and Repeater Power Amplifiers, Industrial RF Heating and Plasma Generators, Aerospace / Defense RF Links (2.5 GHz), S-Band Radar and Surveillance Transmitters.
LTE / TD-LTE Base Station Power Amplifiers (2496-2690 MHz)
The AFT26H250W03SR6 is purpose-built for the 2496-2690 MHz Band 38/Band 41 cellular bands used by LTE and TD-LTE base stations. Its 50 W average output power is the typical building block for a 60-80 W Doherty amplifier after output combining, and its 14.1 dB gain eliminates an extra driver stage in many designs. The 28 V supply voltage matches mainstream BTS power-system rails. Why it fits: the combination of high gain, 50 W average envelope, and rugged LDMOS construction meets stringent LTE ACLR linearity targets while keeping BOM and thermal BOM cost low versus GaN. Performance consideration: the device is internally matched at the input, so the PCB output matching network still requires careful load-pull optimization against the NXP reference design to achieve full rated power and efficiency across the 194 MHz instantaneous bandwidth.
Recomendado
Doherty Main/Peak Pairs in Macro BTS
Used as the main or peaking device in a Doherty amplifier chain, the AFT26H250W03SR6's 28 V LDMOS architecture delivers the load modulation behavior required for high-efficiency Doherty operation in LTE macro base stations. Pins 1 and 2 are DC-coupled and RF-independent, allowing precise gate-bias setting of the peaking amplifier for optimal back-off efficiency. Why it fits: NXP's Airfast family is widely deployed in production Doherty pallets, with documented reference designs covering both symmetric and asymmetric configurations. Performance consideration: the device's quiescent current is set to 700 mA for typical class-AB main-stage bias; the peaking amplifier bias must be carefully tuned (often Class-C) to maximize Doherty efficiency at the 6-8 dB back-off typical of LTE signals.
Recomendado
Small Cell and Repeater Power Amplifiers
For small-cell access points and RF repeaters operating in the 2.5 GHz band, the AFT26H250W03SR6's compact NI-1230-4S package and high gain support miniaturized PA designs with fewer parts. The 50 W average rating is well-matched to the power needs of multi-carrier small-cell radios, and the air-cavity ceramic package provides excellent thermal conductivity in space-constrained enclosures. Why it fits: high gain (14.1 dB) reduces MMIC/driver count, lowering both PCB area and bill of materials cost; the rugged LDMOS structure tolerates the high VSWR often seen in small-cell deployments. Performance consideration: thermal management in sealed small-cell housings is the dominant design constraint; the package's flange must be bolted to an internal heatsink with thermal compound to keep junction temperature below 200 C at full output.
Recomendado
Industrial RF Heating and Plasma Generators
Industrial RF heating systems operating at 2.5 GHz benefit from the AFT26H250W03SR6's 50 W CW capability, 28 V supply, and rugged LDMOS design. The device's high gain and broadband matching simplify the RF generator design for plastic welding, plasma generation, and drying applications. Why it fits: the 50 W CW power level, combined with the device's tolerance to high VSWR at the output, suits industrial loads that are often poorly matched. The ceramic package delivers the long-term thermal performance required for continuous industrial duty cycles. Performance consideration: for industrial applications, redundancy and current sharing between multiple AFT26H250W03SR6 devices is often preferred over pushing a single part beyond 50 W; designers should consult NXP's application note on parallel-device operation.
Recomendado
Aerospace / Defense RF Links (2.5 GHz)
Aerospace and defense RF communication links in the 2.5 GHz band can leverage the AFT26H250W03SR6's high power density, 28 V military-standard supply compatibility, and rugged construction. The device is suited to UAV datalinks and tactical RF amplifier chains operating in the 2496-2690 MHz region. Why it fits: the air-cavity ceramic package supports the high-temperature operation sometimes required in airborne applications; the LDMOS construction is inherently radiation-tolerant at the levels encountered in LEO orbits. Performance consideration: parts sourcing for aerospace applications often requires lot traceability and additional qualification; NXP's authorized distributors can typically provide bonded inventory from a single production lot upon request.
Recomendado
S-Band Radar and Surveillance Transmitters
The AFT26H250W03SR6 supports S-band radar and surveillance transmitter applications in the 2496-2690 MHz portion of the S band. Its pulsed-power capability (when biased accordingly), combined with 50 W average envelope, makes it suitable for short-range radar modulators and drone-detection surveillance systems. Why it fits: the 14.1 dB gain and high breakdown voltage allow pulsed-mode operation with substantial peak power while maintaining the 50 W thermal envelope of the package. Performance consideration: radar applications require careful pulsed-bias timing and may need additional drain modulation; always consult NXP's pulsed S-parameter data for accurate pulse-Doppler performance.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para AFT26H250W03SR6 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | AFT26H250-24SR6 | AFT26H250W03GSR6 | AFT26P100N | AFT27S010N |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230-4S | NI-1230-4S | NI-1230-4S | NI-1230-4S | NI-1230-4S |
| Frequency Range | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | related Airfast frequency band | related S-band subset |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Maximum Junction Temperature | 225 C | 225 C | 225 C | 225 C | 225 C |
Principais diferenciais
- Internally input-matched NI-1230-4S package (vs AFT26P100N)
- High gain at 2496 MHz (14.1 dB) (vs AFT27S010N)
- Mature 28 V LDMOS ecosystem (vs Equivalent GaN HEMTs)
Notas de projeto
Estimated: At 50 W average RF output and 35% typical drain efficiency, the device dissipates roughly 90 W as heat from a 28 V supply. The NI-1230-4S ceramic package must be bolted directly to a copper or aluminum heatsink with high-quality thermal compound; rely on NXP's reference heatsink design (minimum 4 square inches of 1.6 mm copper) to keep Tj below the 225 C maximum. For continuous industrial duty, add a thermal cutout at Tj = 175 C to protect against heatsink degradation.
The output matching network PCB traces must be 50-ohm controlled-impedance, with minimum trace length to the drain lead to preserve 14.1 dB of gain. Use Rogers RO4350B or equivalent low-loss laminate for the matching-network region. Decouple the 28 V drain supply with a 10 uF tantalum capacitor in parallel with a 100 nF ceramic capacitor placed within 5 mm of the package leads.
Never exceed 28 V on the drain - the absolute maximum VDD rating leaves little margin for transient overshoot. Add a 24 V TVS clamp (e.g., SMBJ24A) on the drain supply rail to absorb inductive ringing from the matching network. Ensure the gate bias is applied BEFORE drain voltage, and removed AFTER drain voltage is removed, to prevent device damage during sequencing events.
The input is internally matched to 50 ohms, simplifying the PCB layout. However, the gate bias network must be isolated from the RF input - use a quarter-wave stub or high-impedance bias feed on the gate port. Failure to isolate the DC bias path from the RF path will cause gain loss and degraded intermodulation distortion. Follow NXP's reference design bias-tee topology exactly for production boards.
Informações de conformidade
Air-cavity ceramic package is typically lead-free in modern NXP production. RoHS/REACH specific compliance certificates were not present in the verified web data and are marked [DATA_NEEDED]. AEC-Q100 is not applicable because this is an RF power transistor rather than an automotive-grade IC.
