AON6414A - 30V N-Channel MOSFET, 50A, 8mΩ | Alpha & Omega
N.º da peça: AON6414A ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.21 | $105,00 |
| 1.000 | $0.17 | $170,00 |
| 3.000 | $0.14 | $420,00 |
AON6414A Visão geral
An N-Channel MOSFET such as the AON6414A is a voltage-controlled, majority-carrier device in which a positive gate-to-source voltage creates an inversion layer (channel) beneath the gate oxide, permitting electron flow between source and drain. In the broader taxonomy the part is a power MOSFET, a sub-family of discrete transistors and the workhorse switching element inside switch-mode power supplies (SMPS), DC-DC converters, and battery-management systems. AOS targets this 30 V/50 A class at point-of-load (POL) regulators, USB-PD rails, and high-current load switching where ultra-low R<sub>DS(on)</sub> directly translates to lower conduction loss and higher efficiency.
Key features include trench technology generation N-channel construction, very low on-resistance (8 mΩ max at V<sub>GS</sub>=10 V), low gate charge, and a small 5×6 mm DFN footprint with an exposed pad for low thermal resistance. The 50 A continuous drain rating (T<sub>C</sub>) is well above the typical 13 A figure on a FR-4 board without heatsinking, so designers must verify junction temperature with their real PCB layout.
Application coverage spans high-side switching in SMPS, DC-DC converter synchronous-rectifier and control-side FETs, battery-powered load management, and general purpose switching. When using the AON6414A as a high-side switch, place a 10 kΩ pull-down on the gate to prevent inadvertent turn-on during power-up, and observe the SOA curves for pulsed load conditions.
Alternativas drop-in para AON6414A — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
AON6414AL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AON6414
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AO6414A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
DMN3032SSS
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AON6414A Classificações máximas e características elétricas
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 30 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> = 25°C | 50 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub> | 13 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 8 mΩ |
| Power Dissipation (T<sub>A</sub>) | 2.3 W |
| Power Dissipation (T<sub>C</sub>) | 31 W |
| Tipo de montagem | Surface Mount |
| Encapsulamento / Caixa | 8-DFN (5x6) with exposed pad |
| Technology | Trench MOSFET |
Configuração de pinos do AON6414A
| Pino 1 | S — Source |
| Pino 2 | S — Source |
| Pino 3 | S — Source |
| Pino 4 | G — Gate |
| Pino 5 | D — Drain |
| Pino 6 | D — Drain |
| Pino 7 | D — Drain |
| Pino 8 | D — Drain |
AON6414A Área de Operação Segura (estimated, Tc=25°C, single pulse)
Aplicações típicas
AON6414A é adequado para 6 aplicaçãos: SMPS High-Side Switch, DC-DC Converter Synchronous Rectifier, Battery Protection / Load Switching, USB-PD / Hot-Swap Power Switch, Motor Drive H-Bridge / Half-Bridge, POL (Point-of-Load) Regulator.
SMPS High-Side Switch
The AON6414A's 30 V V<sub>DS</sub> rating and 8 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10V make it well suited as a high-side switch in 24 V-to-low-voltage SMPS stages, including telecom and datacom intermediate bus converters. The 50 A T<sub>C</sub> rating supports >20 A continuous loads with substantial transient headroom, while the small 5x6 mm DFN footprint with exposed pad keeps loop area minimal. Use it on the high side of the synchronous-rectifier bridge where its low gate charge reduces switching losses at hundreds of kHz.
Recomendado
DC-DC Converter Synchronous Rectifier
In buck or buck-boost DC-DC converters the AON6414A serves as the synchronous rectifier (low-side) FET. Its 8 mΩ R<sub>DS(on)</sub> keeps conduction loss low (for example P = I²R = 6.25 A² × 0.008 Ω ≈ 0.31 W at 25 A), and the trench technology yields low gate charge that minimizes cross-conduction dead-time. The exposed pad provides a low θ<sub>JA</sub> path to the copper pour, keeping junction temperature rise modest even at 13 A on a 1 oz FR-4 board.
Recomendado
Battery Protection / Load Switching
For 1S to 4S lithium battery protection and load-disconnect paths, the AON6414A's 30 V rating comfortably exceeds the highest pack voltage and the 8 mΩ R<sub>DS(on)</sub> minimizes voltage drop across the protection FET, preserving battery run-time. The 50 A T<sub>C</sub> continuous rating covers peak current demands of power-tool packs, USB-PD source paths, and e-bike controllers. Add a TVS across drain-source to clamp inductive transients when switching motors or solenoids.
Recomendado
USB-PD / Hot-Swap Power Switch
The AON6414A's small footprint and low R<sub>DS(on)</sub> suit 5-20 V USB-PD rails and 12 V hot-swap controllers. Under a 5 A Type-C load the conduction loss is only P = I²R = 5² × 0.008 = 0.20 W, meaning temperature rise on a 1 square-inch copper pour stays under 30 °C. The 30 V V<sub>DS</sub> rating gives headroom for transient ringing on long cable harnesses, while the trench technology ensures fast switching for hot-plug current limiting.
Recomendado
Motor Drive H-Bridge / Half-Bridge
In 12 V brushed-DC and small BLDC motor half-bridges the AON6414A's 50 A T<sub>C</sub> rating covers inrush currents seen during motor startup, and its low R<sub>DS(on)</sub> reduces thermal stress during PWM duty cycles. Use two AON6414A devices per half-bridge (one high-side, one low-side) to deliver >25 A continuous motor current with adequate thermal margin. Ensure gate drive is referenced to source and provides adequate pull-down for safe disable.
Recomendado
POL (Point-of-Load) Regulator
For low-voltage point-of-load regulators powering ASICs, FPGAs, and DDR memory, the AON6414A's trench technology delivers sub-10 mΩ R<sub>DS(on)</sub> at 10 V drive, low Q<sub>g</sub>, and a compact 5×6 mm DFN footprint. The result is high-frequency (>500 kHz) operation with low switching and conduction losses, shrinking the magnetics footprint of the POL. Exposed-pad thermal design keeps the junction below 100 °C even at 2-3 W board dissipation without forced air cooling.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para AON6414A — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | AON6414AL | AON6414 | AO6414A | DMN3032SSS |
|---|---|---|---|---|---|
| Brand | Alpha & Omega Semiconductors | Alpha & Omega Semiconductors | Alpha & Omega Semiconductors | Alpha & Omega Semiconductors | Diodes Incorporated |
| Package | DFN5x6-8L | DFN5x6-8L - same | DFN5x6-8L - same | DFN5x6-8L - same | DFN5x6-8L - same |
| V<sub>DS</sub> Max | 30 V | 30 V | 30 V | 30 V | 30 V |
| Technology | Trench N-Channel | Trench N-Channel | Trench N-Channel | Trench N-Channel | Trench N-Channel |
| Polarity / Type | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Principais diferenciais
- Latest silicon revision in the AON6414 family (vs AON6414 (unsuffixed))
- Pin-compatible successor to the widely-used AO6414A (vs AO6414A)
- 8 mΩ R<sub>DS(on)</sub> for ultra-low conduction loss (vs DMN3032SSS (Diodes Incorporated))
Notas de projeto
Estimated thermal derating: at P = 2.3 W on the Ta rating the part dissipates as if the entire 8 mΩ R<sub>DS(on)</sub> is used. Mount the exposed pad on at least 1 square inch of 1 oz copper to keep junction rise to roughly 50 °C above ambient. For >3 W board dissipation add thermal vias to an internal copper plane or a small top-side heatsink.
Minimize the high-side switching loop by placing the AON6414A, the driver IC, and the bootstrap capacitor within a tight loop. Keep the gate-drive trace short and use a 10 Ω series gate resistor plus a 10 kΩ pull-down to source to prevent false turn-on from drain voltage transients (Miller effect). Use a 4-layer PCB if possible to provide a low-impedance return under the switching node.
Do not exceed V<sub>GS</sub> = ±20 V maximum gate rating - the AON6414A's logic-level / standard-level gate is not 100% logic-compatible at all V<sub>GS</sub> thresholds. Always include a gate-source Zener clamp (e.g. 12 V) when the gate is driven from a high-voltage bootstrap. Confirm SOA for pulsed loads because single-pulse ratings differ substantially from DC ratings.
Informações de conformidade
RoHS, REACH, halogen-free and conflict-mineral status are not present in the verified web data snippets for AON6414A; set to unknown pending review of the full manufacturer datasheet. Lead-free is assumed based on industry-standard DFN packaging norm - see AOS datasheet for confirmation.
