BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc
N.º da peça: BSS84-7-F ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.07 | $0,07 |
| 10 | $0.054 | $0,54 |
| 100 | $0.036 | $3,60 |
| 500 | $0.028 | $14,00 |
| 1.000 | $0.022 | $22,00 |
| 3.000 | $0.019 | $57,00 |
BSS84-7-F Visão geral
A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate-source voltage is pulled below its negative threshold. Within the power management hierarchy, small-signal MOSFETs like the BSS84 sit between general-purpose transistors and power MOSFETs, serving as low-side or high-side switches, level shifters, and load switches in power management circuits.
Key features include the 50 V breakdown rating, which gives generous margin on 12 V and 24 V rails, low on-state resistance designed to minimize conduction loss, and fast switching performance suited to high-efficiency power-management applications. The SOT-23 package is one of the industry's most compact and widely assembled footprints, keeping board area and placement cost low.
Technologically, the BSS84 family uses an advanced planar MOS process optimized by Diodes Incorporated to reduce RDS(ON) while maintaining superior switching behavior. The solderable matte-tin plated terminals, plated per MIL-STD-202 as noted in distributor data, support standard reflow soldering processes.
Typical applications include load switches in battery-powered and portable devices, high-side switching of 12 V or 24 V industrial rails, level shifting between logic domains, relay and LED driver circuits, and general-purpose inversion in MCU and FPGA board designs.
When designing with this device, remember the 300 mW Ta power limit and derate above 25C ambient; gate drive voltage directly sets RDS(ON), so driving the gate fully (e.g., -4.5 V or more) minimizes conduction loss.
This page adds value beyond the manufacturer datasheet by synthesizing distributor pricing tiers, drop-in alternatives, application guidance, and design notes in one place.
Alternativas drop-in para BSS84-7-F — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com BSS84-7-F (mesmo formato e footprint) — diferindo em Package, Technology, Terminal Finish.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSS84LT1G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSS84_NL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSS84PH6327XTSA2
✅ Drop-In✓ Em estoque
$0.1 / unidade
Ver ficha técnica →BSS84PH6327XTSA2
✅ Drop-In✓ Em estoque
$0.1 / unidade
Ver ficha técnica →BSS84-HF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSS84-7-F-ES
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSS84-7-F Classificações máximas e características elétricas
| Transistor Polarity | P-Channel |
| Mode of Operation | Enhancement Mode |
| Drain-Source Voltage VDS | 50 V |
| Continuous Drain Current ID | 130 mA (Ta) |
| Power Dissipation PD | 300 mW (Ta) |
| Configuration | Single FET |
| Encapsulamento | SOT-23-3 |
| Tipo de montagem | Surface Mount |
| Terminal Finish | Matte tin plated (solderable per MIL-STD-202) |
| Packaging Suffix | -7-F (Tape and Reel) |
| Status RoHS | Compliant |
| Technology | Si |
Configuração de pinos do BSS84-7-F
| Pino 1 | G — Gate - control terminal; drive below source to turn on (P-channel) |
| Pino 2 | D — Drain - current terminal, connected to package tab |
| Pino 3 | S — Source - current terminal, typically tied to supply rail in high-side use |
Aplicações típicas
BSS84-7-F é adequado para 6 aplicaçãos: High-Side Load Switching, Battery-Powered Portable Devices, Logic Level Shifting, Industrial 24 V Control Panels, LED Driver and Indicator Circuits, Reverse Polarity and Power-Mux Protection.
High-Side Load Switching
As a P-channel MOSFET, the BSS84-7-F excels as a high-side switch on 12 V and 24 V rails. Its 50 V VDS rating provides ample margin against inductive transients when switching relays, solenoids, and lamp loads. Turning the device on requires only pulling the gate a few volts below the source, so a simple NPN or logic-level control signal through a resistor suffices - no charge pump or dedicated gate driver is needed. Placed between the supply rail and the load with a 100 kOhm gate-source pull-up and a 1 kOhm series gate resistor, it delivers clean rail switching with quiescent draw in the microamp range when off, which is valuable in always-on and battery-backup circuits.
Recomendado
Battery-Powered Portable Devices
In battery-powered products, the BSS84-7-F acts as a power-path or peripheral load switch that disconnects sensors, displays, and radios when idle. Its small SOT-23-3 footprint keeps the PCB compact, and its low off-state leakage preserves battery life during sleep states. With a 50 V rating it safely handles charging transients and inductive kick from vibration motors. Designers typically drive its gate directly from a microcontroller GPIO through a divider, fully enhancing the device with a gate drive of -2.5 V or more. Because conduction loss at 130 mA-class loads is small, thermal impact is negligible even in sealed enclosures, making it a default choice for cost-sensitive consumer and wearable designs.
Recomendado
Logic Level Shifting
The BSS84-7-F serves in bidirectional open-drain level-shift topologies between logic domains, such as 3.3 V MCU I2C buses talking to 5 V peripherals. In the classic two-MOSFET level shifter, the P-channel device pulls lines to the higher rail while the bus remains tri-stateable in both directions. Its low gate threshold (sub-2 V region typical for BSS84 types) ensures clean switching from 3.3 V logic, and its 50 V rating means it is never stressed even on higher-voltage interfaces. The fast switching capability noted in the Diodes Incorporated datasheet preserves I2C rise-time budgets at standard 100 kHz and 400 kHz speeds when paired with appropriate pull-up resistors.
Recomendado
Industrial 24 V Control Panels
Industrial control panels and PLC I/O modules frequently need to switch 24 V signals; the BSS84-7-F's 50 V rating gives the headroom required for surge-prone 24 V systems. Used for high-side switching of indicator lamps, small relays, and sensor power, it replaces more expensive driver ICs in low-current channels. Its matte-tin, RoHS-compliant finish and surface-mount package suit automated assembly of industrial boards. Designers add a TVS or flyback diode for inductive loads and size the gate pulldown to guarantee hard turn-off during brownouts. At 130 mA-class loads, dissipation remains a small fraction of the 300 mW rating, so no heatsinking is needed even at elevated panel ambient temperatures.
Recomendado
LED Driver and Indicator Circuits
For LED indicators, backlight strings, and small LED drivers, the BSS84-7-F switches LED current on the high side, which simplifies wiring where the cathode side must stay at ground reference. Its 130 mA capability covers typical indicator and small-backlight currents, while the 300 mW dissipation limit bounds the maximum LED string power. Fast switching supports PWM dimming at audio-band and higher frequencies with sharp edges, since the device's gate charge is low. A typical circuit drives the gate from an MCU through a 1 kOhm resistor with a 100 kOhm gate-source pull-up, achieving clean dimming control. Its compact SOT-23 package allows placement directly adjacent to each LED channel on dense boards.
Recomendado
Reverse Polarity and Power-Mux Protection
The BSS84-7-F is commonly used as a P-channel MOSFET in reverse-polarity protection and simple two-input power multiplexing (power-mux) circuits. Wired with the body diode oriented to block reverse current, it drops only millivolts at low current - far less than a series Schottky diode - conserving voltage headroom on 3.3 V and 5 V rails. In power-mux duty, two BSS84 devices arbitrate between a battery and an adapter input, with gates cross-coupled so the higher-priority source wins automatically. The 50 V rating comfortably exceeds adapter transients on 12 V systems, and the part's low cost permits redundant protection stages without significant BOM impact, improving overall power-path reliability.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BSS84-7-F — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSS84LT1G | BSS84_NL | BSS84-HF | BSS84-7-F-ES |
|---|---|---|---|---|---|
| Package | SOT-23-3 | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Diodes Incorporated | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Drain-Source Voltage VDS | 50 V | 50 V | 50 V | 50 V | 60 V (per equivalent listing) |
| Polarity | P-Channel, Enhancement | P-Channel, Enhancement | P-Channel, Enhancement | P-Channel, Enhancement | P-Channel, Enhancement |
Principais diferenciais
- Industry-standard BSS84 footprint with dual-sourcing freedom (vs BSS84LT1G)
- Lead-free matte-tin finish by suffix designation (vs BSS84_NL)
- Trade-off: lower current class than the ES variant (vs BSS84-7-F-ES)
Notas de projeto
The BSS84-7-F is limited to 300 mW dissipation at 25C ambient (Ta). Estimated: at the full 130 mA rating with an RDS(on) in the ~10 Ohm class typical of BSS84-type parts at -5 V gate drive, conduction loss is roughly I^2 x R = 0.13 A^2 x 10 Ohm = 0.17 W, which is within rating but leaves little margin - derate above 25C and consider a lower-RDS(on) device for continuous high-current duty. Above ~3.3 V gate drive the RDS(on) improves only marginally, so there is no benefit in overdriving the gate beyond the abs max.
Place a series gate resistor (330 Ohm to 1 kOhm) close to the gate pin to damp ringing and control switching speed, and always include a 10 kOhm to 100 kOhm gate-source pull-up so the device defaults to off if the driver is floating or during MCU reset. Keep drain and source traces short and wide; although 130 mA is modest, the SOT-23 pins have limited current capacity and trace inductance on the drain can create overshoot on inductive loads.
The gate-source absolute maximum rating of BSS84-type devices is typically +/-20 V - never clamp the gate drive above this. During reverse-polarity or power-mux use, verify the body diode orientation carefully: the P-channel body diode conducts from drain to source, so the source must connect to the supply side for blocking operation. Finally, remember this is a small-signal FET - it is not a substitute for power MOSFETs in multi-amp loads regardless of adequate voltage rating.
Informações de conformidade
RoHS compliant per DigiKey product listing. The -F suffix denotes lead-free matte-tin plated (solderable) terminals per product data referencing MIL-STD-202 plating. REACH, halogen-free, and conflict-minerals status not stated in the provided web data.
