BUZ71A - 50V 13A N-Channel Power MOSFET | STMicroelectronics
N.º da peça: BUZ71A ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.2 | $1,20 |
| 10 | $1.02 | $10,20 |
| 100 | $0.85 | $85,00 |
| 500 | $0.72 | $360,00 |
| 1.000 | $0.61 | $610,00 |
BUZ71A Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that dominates the power-management layer of modern electronics. As an enhancement-mode N-channel device, it conducts when the gate is driven above the source and offers far higher switching speed and lower gate-drive power than bipolar transistors. Power MOSFETs sit within the broader hierarchy of discrete semiconductors: transistor family, field-effect transistor (FET) class, metal-oxide-semiconductor (MOS) technology, used wherever efficient load switching is required.
Key features of the BUZ71A include STStripFET cell geometry for low on-state resistance (0.1 ohm typical), avalanche-rugged technology that is 100% avalanche energy tested for inductive-load robustness, high continuous current capability of 13A at 25C case temperature, and a maximum operating temperature of 175C. Older Intersil and Motorola second sources specify 0.120 ohm maximum RDS(on) at 13A, confirming parametric equivalence across vendors.
The device uses an enhancement-mode silicon-gate vertical DMOS structure. The StripFET layout minimizes channel resistance and gate charge, enabling efficient switching in regulators and converters where both conduction and switching losses matter. Gate drive requirements are modest, allowing direct drive from logic-level circuitry with adequate voltage headroom.
Typical applications include switching regulators, switching converters, motor drivers, relay and solenoid drivers, and high-power bipolar transistor driver stages - exactly the application list cited in the manufacturer datasheet. It also fits general-purpose DC-DC bricks and lighting ballasts.
Design consideration: verify gate-drive amplitude against the gate threshold specification and add a gate series resistor to damp parasitic ringing; at 13A, even 0.1 ohm RDS(on) dissipates roughly 17W (estimated: I^2 x R = 13^2 x 0.1), so heatsinking on the TO-220 tab is essential at high duty cycles.
This page synthesizes distributor pricing, cross-referenced drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para BUZ71A — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BUZ71
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BUZ72A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BUZ74A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BUZ76A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MTP3055VL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BUZ71A
✅ Drop-In✓ Em estoque
$0.61 / unidade
Ver ficha técnica →BUZ71A Classificações máximas e características elétricas
| Polarity | N-Channel |
| Operating Mode | Enhancement mode |
| Drain-Source Voltage (VDS) | 50 V |
| Continuous Drain Current (ID) | 13 A |
| RDS(on) Typical | 0.1 ohm |
| RDS(on) Maximum (per Intersil/Motorola data) | 0.120 ohm at ID = 13 A |
| Power Dissipation (Pd) | 40 W |
| Avalanche Test | 100% avalanche tested |
| Technology | STripFET |
| Temperatura de junção de operação | -55C to +175C |
| Encapsulamento | TO-220 (TO-220AB) |
| Tipo de montagem | Through Hole |
| Contagem de pinos | 3 |
| Configuration | Single MOSFET (1 element) |
| Typical Applications | Switching regulators, converters, motor/relay drivers |
Configuração de pinos do BUZ71A
| Pino 1 | Gate — Gate control terminal; drive with 10V for full enhancement |
| Pino 2 | Drain — Drain terminal, connected to the metal mounting tab |
| Pino 3 | Source — Source terminal; reference for gate drive |
Aplicações típicas
BUZ71A é adequado para 6 aplicaçãos: Switching Regulators, Switching Converters (DC-DC), Motor Drivers, Relay and Solenoid Drivers, Driver for High-Power Bipolar Switching Transistors, Audio Amplifier Power Supply Repair.
Switching Regulators
The BUZ71A is explicitly listed in the manufacturer datasheet as designed for switching regulators, where it acts as the main PWM switch. Its 0.1 ohm typical RDS(on) keeps conduction losses low during the on-phase, while STripFET technology limits gate charge so switching transitions are fast, reducing overlap losses at typical 20-200 kHz regulator frequencies. The 50V VDS rating comfortably covers 24V industrial buses with transient margin, and the 100% avalanche test provides robustness against leakage-inductance spikes on the switching node. Designers should include a snubber or clamp and verify gate drive of about 10V to achieve full enhancement and datasheet-level RDS(on).
Recomendado
Switching Converters (DC-DC)
In DC-DC switching converters, the BUZ71A serves as the primary-side or synchronous switch where 50V blocking and 13A capability align with 12V/24V input brick converters. The low 0.1 ohm RDS(on) means an estimated 17W conduction loss at full 13A (I^2 x R), so heat spreading via the TO-220 tab and heatsink is required at high duty cycle. Avalanche ruggedness absorbs transformer leakage energy, and the 175C junction rating gives thermal headroom in sealed enclosures. A gate driver delivering 10-12V with a small series resistor minimizes switching loss and damps ringing for efficient, reliable conversion.
Recomendado
Motor Drivers
For DC motor control, the BUZ71A functions as a low-side PWM switch or as part of an H-bridge leg. Its 13A continuous rating covers most 12V/24V fractional-horsepower motors, and the 100% avalanche energy test protects against the repetitive inductive kick from motor windings when the device switches off. Low RDS(on) of 0.1 ohm typical reduces voltage drop and heating during long on-times, which matters in stalled-rotor conditions. Add a flyback diode or TVS across the motor terminals, drive the gate with 10V for minimum on-resistance, and size the heatsink for worst-case stall current to keep junction temperature safely below 175C.
Recomendado
Relay and Solenoid Drivers
The BUZ71A is well suited to driving relays and solenoids from microcontroller or logic systems. The MOSFET presents a purely capacitive gate load, so drive power is negligible compared with bipolar alternatives such as the TIP120 Darlington, which needs a base resistor and dissipates about 1.4V of saturation drop. With 0.1 ohm RDS(on), the BUZ71A drops an estimated 1.3V at 13A - roughly an order of magnitude less loss. The avalanche-tested die tolerates coil de-energization spikes, though a clamp diode is still recommended. A gate series resistor of a few hundred ohms limits inrush into the gate capacitance from the GPIO pin.
Recomendado
Driver for High-Power Bipolar Switching Transistors
The manufacturer datasheet specifically cites the BUZ71A for driving high-power bipolar switching transistors requiring high speed and low gate-drive power. In this topology, the MOSFET acts as a fast pre-driver that abruptly removes base drive from a BJT switch, sharply reducing storage time and improving overall converter efficiency. The BUZ71A's low gate charge and 0.1 ohm RDS(on) allow rapid charge extraction with minimal dissipation, while the 50V rating withstands the driver-rail transients typical of such stages. This arrangement appears in legacy switching power supplies and inverters being serviced or rebuilt with available TO-220 components.
Recomendado
Audio Amplifier Power Supply Repair
Repair communities frequently replace the BUZ71/BUZ71A family in audio amplifier switch-mode power supplies, as documented in repair forum threads. The BUZ71A's 50V, 13A, 0.1 ohm ratings match the demands of half-bridge and forward converter stages in hi-fi power supplies, where low RDS(on) reduces heat buildup in confined chassis. Because the TO-220 footprint and G-D-S pinout are standard, replacements such as BUZ72A or onsemi MTP3055VL can be fitted without PCB rework, though gate resistors should be checked when moving between MOSFET generations with different gate charge. Match devices from the same batch in push-pull stages for balanced switching.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BUZ71A — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BUZ71 | BUZ72A | MTP3055VL | BUZ71A (NJS) |
|---|---|---|---|---|---|
| Package | TO-220 (ST) | TO-220 - same | TO-220 - same | TO-220AB - same footprint | TO-220AB - same footprint |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | onsemi | NJS (New Jersey Semiconductor) |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 60 V | 50 V |
| Max Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C |
Principais diferenciais
- Lowest RDS(on) in its 50V TO-220 peer group (vs MTP3055VL)
- 100% avalanche energy tested (vs MTP3055VL)
- Higher current rating within same ST family (vs BUZ71A (NJS second source))
- Trade-off: not logic-level (vs Modern logic-level MOSFETs)
Notas de projeto
Estimated: at 13A continuous with 0.1 ohm RDS(on), conduction loss is about 17W, requiring a substantial heatsink since the TO-220 case must stay near 25C to sustain the 40W rating. Practically, target junction temperature below 125C: with a typical 2-3 C/W heatsink plus interface, a 17W dissipation demands forced air or a large extruded heatsink. For compact designs, reduce continuous current to 5-8A or lower the duty cycle, and use thermal paste rather than dry mounting on the tab.
The BUZ71A is a through-hole TO-220, so minimize gate loop area by placing the driver close to pin 1 and add a 100 ohm (typical) series gate resistor to damp ringing against gate capacitance. Keep the source return path (pin 3) directly to the driver ground to prevent source-lead inductance from slowing switching. For higher current paths, reinforce the drain/source traces with solder or wire links, since 13A exceeds the capability of a standard 1oz 2mm trace.
The BUZ71A is not a logic-level MOSFET: driving it from a 5V GPIO at high current leaves it partially enhanced, raising RDS(on) far above 0.1 ohm and causing overheating. Use a 10-12V gate drive or a gate driver IC. Also note the drain is bonded to the tab - isolated hardware is needed when mounting to a live heatsink. Handle with ESD precautions; silicon-gate MOSFETs are sensitive to gate oxide damage from static discharge.
Informações de conformidade
Compliance status was not stated in the reviewed sources as of 2026-10-21. Verify RoHS/REACH on the official STMicroelectronics product page or request a certificate of conformance from the distributor.
