CPM3-10000-0300A - 10kV/305mΩ SiC Bare Die MOSFET | Wolfspeed
N.º da peça: CPM3-10000-0300A ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $850 | $850,00 |
| 10 | $780 | $7.800,00 |
| 100 | $695 | $69.500,00 |
| 500 | $640 | $320.000,00 |
| 1.000 | $595 | $595.000,00 |
CPM3-10000-0300A Visão geral
What is a SiC MOSFET? A silicon carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor that switches much faster and sustains higher blocking voltages than silicon MOSFETs or IGBTs, with lower switching losses and higher thermal tolerance. Within the power-semiconductor taxonomy, the CPM3-10000-0300A sits as: SiC MOSFET → power MOSFET → discrete semiconductor → power management. The 10 kV class eliminates multi-level converter stages in medium-voltage applications.
Key features include a 305 mΩ typical RDS(on) at 20 A, 10000 V drain-source voltage rating, and 20 A continuous drain current. The device supports gate threshold voltage of approximately 2.8 V (per third-party benchmark) and offers AEC-Q100-style industrial qualification suitable for traction, grid-tie, and industrial motor drive environments. The bare-die format allows hybrid module integration with minimum parasitic inductance.
The C3M third-generation SiC process enables a thinner drift layer and superior switching figure of merit (RDS(on) × Qg) compared to the prior generation. The 8.1 × 8.1 mm² die footprint is consistent with the companion QPM3-10000-0300A qualification sample, easing dual-sourcing of engineering samples.
Typical applications include medium-voltage motor drives (3.3 kV/6.9 kV class), solid-state transformer (SST) primary bridges, traction auxiliary converters, grid-tie photovoltaic inverters above 1500 V DC, and pulsed-power / high-voltage DC transmission. The bare die form factor targets hybrid power module assemblies where minimum loop inductance is critical.
Designers should evaluate thermal-stack design (DBC substrate, sintered or soldered attach) and gate-driver placement within millimeters of the die to limit parasitic inductance. Pairing this device with a compatible isolated gate driver (e.g., ±20 V capable, 15-25 V recommended) is required to remain within the datasheet SOA.
This page synthesizes distributor pricing context, drop-in alternatives, and practical design notes not found in the bare-die datasheet alone.
Alternativas drop-in para CPM3-10000-0300A — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
CPM3-10000-0350A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
QPM3-10000-0300A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CPM3-10000-0300A Classificações máximas e características elétricas
| Technology | Silicon Carbide (SiC) Power MOSFET, N-Channel |
| Generation | Wolfspeed C3M (3rd generation) |
| Drain-Source Voltage (VDS) | 10000 V (10 kV) |
| Continuous Drain Current (ID) | 20 A |
| On-State Resistance (RDS(on)) | 305 mΩ typical at 20 A |
| Gate Threshold Voltage (VGS(th)) | 2.8 V (per third-party benchmark) |
| Package Type | Bare Die (wafer / die form factor) |
| Die Size | 8.1 x 8.1 mm (per Aalborg University characterization) |
| Tipo de montagem | Die-attach / wire-bond (hybrid module) |
| Qualification Grade | Industrial (per Wolfspeed product page) |
| Power Density vs IGBT | >300% (per Wolfspeed 10 kV launch announcement) |
| Thermal Load vs IGBT | 50% lower than equivalent IGBT (per Wolfspeed launch announcement) |
| Cost Position vs IGBT | 30% cost reduction vs equivalent IGBT (per Wolfspeed launch announcement) |
| Form Factor Family | Wolfspeed CPM3 10 kV Bare Die platform |
Guia de Configuração de Pinos do CPM3-10000-0300A bare die (wafer / die form factor)
Configuração de pinos para CPM3-10000-0300A (pacote bare die (wafer / die form factor)). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para CPM3-10000-0300A.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
CPM3-10000-0300A é adequado para 6 aplicaçãos: Medium-Voltage Motor Drive (3.3/6.9 kV class), Solid-State Transformer (SST) Primary Bridge, Traction Auxiliary Converter / Rail Drive, Grid-Tie PV Inverter (>1500 V DC), High-Voltage DC (HVDC) Transmission Module, Pulsed-Power and Particle Accelerator Modulator.
Medium-Voltage Motor Drive (3.3/6.9 kV class)
The Wolfspeed CPM3-10000-0300A fits medium-voltage industrial motor drives operating at 3.3 kV or 6.9 kV because its 10 kV drain-source rating provides substantial blocking-voltage margin against transient overvoltage and inductive kickback. Its 305 mΩ typical RDS(on) at 20 A keeps conduction losses manageable across the 10-50 kW power range typical of these drives. Bare-die integration onto AMB substrates lowers loop inductance compared with traditional IGBT modules, so the design can switch at 10-30 kHz versus the 1-5 kHz typical of silicon IGBTs. The 50% lower thermal load announced by Wolfspeed directly shrinks heatsink sizing in air-cooled cabinets, and a single 10 kV switch replaces pairs of series-stacked 3.3 kV or 6.5 kV silicon devices. Designers should validate DC-bus short-circuit withstand and pair the die with a ±20 V isolated gate driver.
Recomendado
Solid-State Transformer (SST) Primary Bridge
The CPM3-10000-0300A suits SST primary bridges because its 10 kV class matches the rectifier-stage voltage of medium-voltage grid-side transformers directly, removing the need for bulky 60 Hz iron or series-stacked 3.3 kV stages. Switching losses are dominated by hard-switching events in the H-bridge, where the C3M SiC third-generation process delivers figure-of-merit (RDS(on) × Qg) improvements that lower total converter loss. Bare-die assembly onto DBC substrates keeps commutation loops <10 nH, enabling the high dV/dt (>50 kV/μs) needed for high-frequency SST isolation stages. Pairing the die with a high-CMTI isolated gate driver ensures robust switching at high bus voltages, and 50% lower thermal load than IGBT shrinks the liquid-cooling loop.
Recomendado
Traction Auxiliary Converter / Rail Drive
The Wolfspeed CPM3-10000-0300A addresses rail-traction auxiliary converters and main traction drives by combining 10 kV blocking capability with 50% lower thermal load versus an IGBT alternative, reducing cooling-system mass in weight-sensitive rolling stock. The bare-die form factor integrates into custom traction inverter modules where minimum loop inductance and high power density are critical, supporting 3x power density per inverter stage per Wolfspeed's launch data. AEC-Q100-style industrial qualification aligns with rail-industry reliability targets for trackside and on-board use. Designers should account for vibration tolerance via robust DBC attach and use silver-sinter or high-lead solder processes. The 10 kV rating also enables direct connection to 1500 V DC catenary systems with derated bus voltage.
Recomendado
Grid-Tie PV Inverter (>1500 V DC)
The CPM3-10000-0300A is well-suited to next-generation 1500 V DC and emerging 2000 V DC string-inverter architectures for utility-scale PV. Its 10 kV blocking rating provides headroom well beyond the worst-case transient-induced DC bus voltage from modern 1500 V arrays. Bare-die integration with optimized DBC layout reduces switching loss per cycle, allowing inverter switching frequencies to climb toward 50-100 kHz, shrinking magnetics significantly. The 50% lower thermal load versus IGBT allows smaller air-cooled heat sinks in 1.5-3 MW central inverters, lowering balance-of-system cost. Designers should validate parasitic-inductance budgets carefully because high dV/dt accelerates partial-discharge risk at the die-attach layer.
Recomendado
High-Voltage DC (HVDC) Transmission Module
The CPM3-10000-0300A targets modular HVDC converter stages operating at ±10 kV or ±50 kV where series-stacking of many medium-voltage devices is normally required. A single 10 kV die per switch position simplifies mechanical stack assembly and reduces gate-driver isolation stages, while its 305 mΩ RDS(on) keeps per-module conduction loss acceptable for continuous duty cycles. The bare-die format accommodates the redundancy and modularity demanded by HVDC station layouts, and Wolfspeed's 50% thermal-load reduction supports the strict cooling budgets of indoor valve halls. Module designers must address fault-current interruption within microseconds and provide dedicated short-circuit protection.
Recomendado
Pulsed-Power and Particle Accelerator Modulator
The CPM3-10000-0300A serves pulsed-power applications including particle accelerator pulsers, high-energy physics kicker systems, and electromagnetic launchers. The 10000 V blocking rating supports direct connection to pulse-forming network (PFN) capacitors at the multi-kV level. Bare-die assembly minimizes parasitic inductance, which is critical to maintaining sub-microsecond pulse rise times demanded by klystron modulators and PFN discharge circuits. The 20 A continuous drain current allows kA-level pulses through parallel die arrangements, while the SiC die withstands high di/dt and repetitive avalanche stress better than silicon MOSFETs and even HV-IGBTs. Designers should use snubber networks and validate dynamic avalanche robustness within their specific pulse-repetition-rate envelope.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para CPM3-10000-0300A — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | CPM3-10000-0350A | QPM3-10000-0300A |
|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed |
| Package | Bare Die 8.1 x 8.1 mm | Bare Die 8.1 x 8.1 mm - same | Bare Die 8.1 x 8.1 mm - same |
| Drain-Source Voltage (VDS) | 10000 V (10 kV) | 10000 V (10 kV) | 10000 V (10 kV) |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A |
| On-State Resistance (RDS(on)) | 305 mΩ typical @ 20 A | 350 mΩ typical @ 20 A (+15%) | 305 mΩ typical @ 20 A (same) |
| Technology / Generation | SiC / C3M 3rd-gen | SiC / C3M 3rd-gen | SiC / C3M 3rd-gen |
| Qualification Status | Industrial, Production | Industrial, Production | Engineering / Qualification Sample |
| Use Case Fit | Production converters / modules | Cost-sensitive / pulsed-power production | Design validation / pre-production builds |
| Relative Cost (qty 100) | Baseline reference | Typically lower (higher RDS(on) bin) | Typically higher (sample pricing) |
Principais diferenciais
- World's first commercially released 10 kV SiC MOSFET (vs 6.5 kV silicon IGBT module)
- Lowest RDS(on) in the 10 kV SiC bare-die family (vs CPM3-10000-0350A)
- Single-die 10 kV power density at 3x of IGBT solutions (vs Series-stacked 3.3 kV IGBT modules)
Notas de projeto
Estimated: At a realistic converter duty of 14 A continuous with 50% switching loss overhead, the CPM3-10000-0300A dissipates approximately 55-65 W inside the die (silicon-carbide heating: I²R plus switching). Bare-die assembly onto an AMB DBC substrate yields a junction-to-case thermal resistance θ_JC of roughly 0.3 °C/W when silver-sintered. Maximum junction temperature per Wolfspeed's C3M platform is 175 °C; an adequate cold-plate design must keep case rise to ≤100 °C, which corresponds to a cold-plate-to-ambient thermal resistance <1.4 °C/W. Forced-liquid cooling is recommended for ≥10 kW module designs.
Bare-die modules require a high-CTE-matched DBC substrate (Si3N4 AMB preferred over Al2O3 for reliability under thermal cycling) and silver-sinter or high-lead solder die attach to survive the >300 A/cm² surge currents typical in 10 kV switching events. Wire-bonds should be doubled-up per source pad with 250-300 µm Al wire to limit bond-wire resistance; ribbon bonds are preferred for >50 A per bond. Keep all gate-loop traces within 50 mm to limit parasitic gate-source inductance below 10 nH, and place a 5-10 Ω gate resistor as close to the die gate pad as the wire-bond allows.
Do not attempt to package-test the CPM3-10000-0300A on a standard TO-247 or D2PAK-style breakout board - the 10 kV drain-source rating requires a minimum of 6 mm creepage on the test fixture and a faraday-cage probe station rated for ≥10 kV. Do not exceed the datasheet VGS maximum of ±25 V - the thin gate oxide is vulnerable to over-voltage on the gate. Do not parallel multiple dies without dedicated source-side balancing inductors (10-50 nH) - small RDS(on) tolerances at 305 mΩ can otherwise localize thermal runaway under load. Verify the upper VGS threshold limit and avalanche energy ratings by referring to the Wolfspeed datasheet directly.
Informações de conformidade
RoHS, REACH, lead-free and halogen-free declarations are [DATA_NEEDED] for the bare-die form factor; consult Wolfspeed compliance documentation directly. Wolfspeed identifies the part as Industrial-qualified rather than AEC-Q100.
