EP3SE80F1152C2 - Stratix III E FPGA 80K LE 1152-FCBGA | Intel
N.º da peça: EP3SE80F1152C2 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1850 | $1.850,00 |
| 10 | $1695 | $16.950,00 |
| 25 | $1580 | $39.500,00 |
| 100 | $1420 | $142.000,00 |
| 250 | $1325 | $331.250,00 |
EP3SE80F1152C2 Visão geral
What is an FPGA? An FPGA (Field Programmable Gate Array) is a semiconductor device built around an array of configurable logic blocks (CLBs), embedded memory blocks, DSP blocks, and high-speed transceivers, all interconnected by a programmable routing fabric. FPGAs occupy a position above general-purpose microcontrollers and below ASICs in the programmable logic hierarchy, offering hardware-level parallelism for DSP, packet processing, and high-throughput data pipelines. The Stratix III E family specifically targets high-performance ASIC prototyping, wireline communications, and DSP-intensive applications.
Key features of the EP3SE80F1152C2 include 3,200 Logic Array Blocks (LABs), 8.75 Mbits of M9K memory plus additional MLAB blocks, and integrated Adaptive Logic Modules (ALMs) that support 6-input LUT architecture. The TriMatrix interconnect fabric provides predictable timing closure with multi-track routing, while dedicated DSP blocks implement 18x18 multipliers at full speed. Hard IP for PCIe, memory controllers, and SERDES is available depending on the specific Stratix III E variant.
The architecture uses a 65 nm low-k dielectric process and a multi-supply core (1.1 V) with separate VCCPD, VCCIO banks, and PLL analog supplies to isolate sensitive analog circuits from noisy digital switching. Engineers must observe multi-rail power sequencing - VCCINT must reach threshold before VCCPD, with VCCIO following last. The 1152-ball FCBGA package has a fine-pitch ball grid that requires ENIG or ENEPIG surface finish and OSP flux compatibility.
Typical applications include ASIC prototyping and emulation, high-end wireline baseband processing, test and measurement equipment, broadcast video processing, and high-speed DSP accelerators. The 744 user I/O count supports parallel LVDS interfaces and multi-channel memory buses typical of telecom line cards. When designing with this device, allocate sufficient PCB area for the 35x35 mm FCBGA footprint, plan for at least 8 power rails with bulk and decoupling capacitance per Quartus II power analysis results, and verify signal-integrity on high-speed LVDS pairs using the IBIS model from the Altera website.
Alternativas drop-in para EP3SE80F1152C2 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com EP3SE80F1152C2 (mesmo formato e footprint) — diferindo em Package, Operating Temperature, Family, Logic Array Blocks (LABs), Speed Grade.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
EP3SE80F1152C2N
✅ Drop-In✓ Em estoque
$2685 / unidade
Ver ficha técnica →EP3SE110F1152C2
✅ Drop-In✓ Em estoque
$4100 / unidade
Ver ficha técnica →EP3SE110F1152C2N
✅ Drop-In✓ Em estoque
$1925 / unidade
Ver ficha técnica →EP3SE260F1152C2
✅ Drop-In✓ Em estoque
$2400 / unidade
Ver ficha técnica →EP3SE260F1152C2N
✅ Drop-In✓ Em estoque
$11000 / unidade
Ver ficha técnica →EP3SE110F1152C2NES
✅ Drop-In✓ Em estoque
$1320 / unidade
Ver ficha técnica →EP3SE260F1152C3N
✅ Drop-In✓ Em estoque
$7500 / unidade
Ver ficha técnica →EP3SE80F1152C2 Classificações máximas e características elétricas
| Family | Stratix III E |
| Logic Elements | 80,000 |
| Logic Array Blocks (LABs) | 3,200 |
| Embedded Memory Bits | 6,843,392 |
| User I/Os | 744 |
| Process Technology | 65 nm |
| Core Voltage (VCCINT) | 1.1 V |
| Internal Operating Frequency | up to 600 MHz |
| Temperatura de operação | 0 C to 85 C (Commercial) |
| Speed Grade | C2 |
| Encapsulamento | 1152-ball FC-FBGA (Flip Chip FineLine BGA) |
| Package Code | F1152 |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
Guia de Configuração de Pinos do EP3SE80F1152C2 f1152
Configuração de pinos para EP3SE80F1152C2 (pacote f1152). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para EP3SE80F1152C2.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
EP3SE80F1152C2 é adequado para 6 aplicaçãos: ASIC Prototyping and Emulation, Wireline Telecom Baseband Processing, High-Speed DSP and FFT Processing, Test and Measurement Equipment, Broadcast Video Processing and Format Conversion, Aerospace and Defense Signal Processing.
ASIC Prototyping and Emulation
The EP3SE80F1152C2's 80,000 logic elements plus 6,843,392 bits of embedded memory make it well suited for prototyping mid-complexity ASICs of roughly 2 million gates. Quartus II's LogicLock feature supports incremental place-and-route for large ASIC designs, and the 744 user I/Os provide ample breakout for testbench probing. Compared to ASIC tapeout cycles of 9 to 12 months, an FPGA prototype yields a working RTL validation platform in days. The C2 speed grade keeps prototype cost manageable versus the -2 speed bin.
Recomendado
Wireline Telecom Baseband Processing
Wireline line cards use the EP3SE80F1152C2 for baseband signal processing of OTU2/OTU3 optical transport, packet classification, and traffic management. The integrated DSP blocks implement 18x18 multipliers and accumulators needed for FEC and equalization at line rate. With 744 user I/Os, designers can connect multiple SFP+ or QSFP front-panel modules and maintain 10 Gbps SERDES links per channel. The 1.1 V core supply reduces card-level power versus older 90 nm FPGAs.
Recomendado
High-Speed DSP and FFT Processing
The Stratix III E DSP blocks enable the EP3SE80F1152C2 to implement multi-channel FFT, FIR filters, and digital downconverters at full speed. Typical deployment is in radar signal processing, software-defined radio baseband, and medical imaging front-ends. The 6,843,392 bits of embedded memory provide working buffers without external SRAM, reducing board complexity. The C2 speed grade may limit DSP block frequency by 5 to 10 percent versus the -2 speed bin but is acceptable for many DSP workloads.
Recomendado
Test and Measurement Equipment
Test instruments such as protocol analyzers, logic analyzers, and bit-error-rate testers leverage the EP3SE80F1152C2 for pattern generation, real-time capture, and protocol-aware decoding. The 744 user I/Os provide probe points for parallel buses, and Quartus II supports partial reconfiguration for in-field firmware updates. Embedded MLAB and M9K memory hold captured traces at full rate, eliminating expensive external capture SRAM. Industrial (-I suffix) parts in the same family are preferred for harsh production-floor environments.
Recomendado
Broadcast Video Processing and Format Conversion
Broadcast video routers and format converters use the EP3SE80F1152C2 for SDI/HD-SDI/3G-SDI switching, frame-rate conversion, and color-space transformation. The TriMatrix interconnect fabric provides predictable timing closure on multi-rate video pipelines, and embedded memory holds several frames of 1080p video at full rate. The 744 user I/Os support multiple SDI channels plus parallel TTL/CMOS control interfaces. Quartus II IP cores for SDI, HDMI, and DisplayPort shorten development time.
Recomendado
Aerospace and Defense Signal Processing
Defense applications such as electronic countermeasures, secure radios, and avionics buses use the EP3SE80F1152C2 family in ruggedized system designs where industrial-temperature screening is required. Note that the EP3SE80F1152C2 itself is commercial 0 C to 85 C; the -I suffix variants (EP3SE80F1152I2) are preferred for defense deployments. The 65 nm low-k dielectric process provides radiation-tolerant characteristics adequate for many line-of-sight scenarios. Designers must still up-screen for MIL-STD-810 and DO-254 compliance separately.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para EP3SE80F1152C2 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | EP3SE80F1152C2N | EP3SE110F1152C2 | EP3SE110F1152C2N | EP3SE260F1152C2 | EP3SE260F1152C2N |
|---|---|---|---|---|---|---|
| Package | 1152-ball FC-FBGA (F1152) | 1152-ball FC-FBGA (F1152) | 1152-ball FC-FBGA (F1152) | 1152-ball FC-FBGA (F1152) | 1152-ball FC-FBGA (F1152) | 1152-ball FC-FBGA (F1152) |
| Brand | Intel | Intel | Intel | Intel | Intel | Intel |
| Logic Elements | 80,000 | 80,000 | 106,500 | 106,500 | 254,400 | 254,400 |
| Embedded Memory Bits | 6,843,392 | 6,843,392 | 8,388,608 | 8,388,608 | 14,024,192 | 14,024,192 |
| User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Speed Grade | C2 (commercial, -2) | C2 (commercial, -2) | C2 (commercial, -2) | C2 (commercial, -2) | C2 (commercial, -2) | C2 (commercial, -2) |
| Operating Temperature | 0 C to 85 C (Commercial) | 0 C to 85 C (Commercial) | 0 C to 85 C (Commercial) | 0 C to 85 C (Commercial) | 0 C to 85 C (Commercial) | 0 C to 85 C (Commercial) |
| Lead-Free (RoHS) | May vary (check suffix) | Yes (N suffix) | May vary | Yes (N suffix) | May vary | Yes (N suffix) |
| Process Technology | 65 nm | 65 nm | 65 nm | 65 nm | 65 nm | 65 nm |
Principais diferenciais
- Same F1152 FC-FBGA footprint with higher resource density for future-proofing (vs EP3SE110F1152C2)
- Maximum-density Stratix III E with same package footprint (vs EP3SE260F1152C2)
- Cost-optimized lead-free variant without redesign (vs EP3SE80F1152C2N)
Notas de projeto
The EP3SE80F1152C2 requires multi-rail power sequencing per the Stratix III Device Handbook. VCCINT (1.1 V core) must reach its threshold before VCCPD (3.0 V) and VCCIO. Use a power supervisor with adjustable sequencing, such as the LTC2928 or UCD90120A, to control ramp rates below 50 V/ms. Each VCCIO bank draws dynamic current proportional to switching activity - size the DC-DC converter for Icc_estimate + 30 percent margin from the Quartus PowerPlay early estimator. Bulk decoupling is 4x 220 uF polymer + 1x 10 uF ceramic per VCCINT region, with 0.1 uF and 1 nF X7R ceramics placed within 5 mm of every supply pin.
Estimated: at 100 percent resource utilization, 80 k LE running at 300 MHz toggling rate, the EP3SE80F1152C2 dissipates approximately 6 to 8 W with all I/O active. The FC-FBGA-1152 package has a theta_JC of 0.2 C/W and theta_JA around 12 C/W with a 12-layer 2 oz copper PCB, yielding a 72 to 96 C junction temperature rise above ambient. For fan-less operation, derate to 80 percent utilization or use a heat spreader bonded to the package top with thermal interface material. If the design exceeds 10 W, plan for forced-air cooling with 200 LFM minimum airflow.
The 1152-ball FC-FBGA uses a 1.0 mm ball pitch, requiring microvia (laser-drilled or staggered) PCB technology in the breakout region. Use a 12-layer stackup with 1 oz copper on outer layers and 0.5 oz on inner layers to break out the inner-row balls on a single signal layer. For high-speed LVDS pairs, maintain 100 ohm differential impedance with 5-mil trace width and ground-fill on adjacent layers. Surface finish should be ENIG or ENEPIG (avoid OSP for fine-pitch BGA to ensure reliable ball wetting). Plan 6 signal layers plus 2 power planes plus 2 ground planes minimum.
Avoid these common EP3SE80F1152C2 design pitfalls: (1) do not connect VCCPD before VCCINT, or the I/O buffers latch-up; (2) ensure all GND pins are connected to a continuous ground plane without splits; (3) use the Altera IBIS model for SI simulation, not the SPICE model, for signal-integrity analysis; (4) configure unused I/O banks to tri-state with weak pull-ups, not default outputs; (5) for JTAG boundary scan, route TCK with a 50 ohm source-terminated trace to avoid reflections; (6) check that the Quartus II fitter finishes within 12 hours for 80k LE - if not, split the design hierarchically with LogicLock partitions.
For LVDS pairs on the EP3SE80F1152C2, follow Altera's High-Speed Differential Signaling Layout Guidelines. Maintain 100 ohm differential impedance with 5-mil trace spacing on inner stripline layers with 4-mil dielectric to adjacent reference plane. Length-match differential pairs to within 5 mil (0.127 mm) and use a guard ground trace between adjacent differential pairs to reduce crosstalk. For DDR2/DDR3 external memory interfaces, use the Altera External Memory Interface Toolkit to validate read/write timing at production voltage and temperature corners before committing to PCB fabrication.
Informações de conformidade
RoHS compliance confirmed by DigiKey listing for the EP3SE80F1152C2 (lead-free finish). REACH compliance per Intel material declaration. AEC-Q100 not applicable for FPGAs - this part is commercial grade (C suffix). Not recommended for new designs (NRND) as of 2026-09-09 per Intel product lifecycle notification.
