FC6B21150L - Dual N-Ch MOSFET, 12V, 8A, Li-Ion Protection | Panasonic
N.º da peça: FC6B21150L ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.38 | $3,80 |
| 100 | $0.33 | $33,00 |
| 500 | $0.28 | $140,00 |
| 1.000 | $0.24 | $240,00 |
| 3.000 | $0.19 | $570,00 |
FC6B21150L Visão geral
What is a MOSFET in a battery protection circuit? A MOSFET used in lithium-ion battery protection is an N-channel power switch that interrupts charge and discharge paths when the protection IC detects over-voltage, under-voltage, over-current, or short-circuit conditions. These protection MOSFETs must have very low on-resistance (Rss(on)) to minimize conduction loss and heat generation during normal operation, while their VDS rating must comfortably exceed the maximum pack voltage.
Key specifications include Rss(on) typical of 4.0 mΩ at VGS = 4.5V, 4.3 mΩ at VGS = 3.8V, and a CSP chip size package with RoHS compliance. The integrated gate resistor simplifies PCB design by eliminating the need for external gate resistors that control switching transients and ringing. The device is qualified to MSL Level 1 and is well-suited for 1-cell Li-ion protection modules.
The FC6B21150L uses Panasonic's proprietary chip-scale packaging that minimizes both footprint and parasitic inductance, which is critical for fast-switching protection events. The symmetrical dual-channel configuration allows independent or paralleled operation for either charge (high-side) and discharge (low-side) FET functions, or for bidirectional protection in 2-terminal battery packs.
Typical applications include 1-cell Li-ion/Li-polymer battery protection ICs, power banks, wearable electronics, TWS earbud charging cases, and compact IoT devices requiring single-cell Li-ion protection. It is also used in BMS front-end stages where PCB real estate is constrained.
When designing with this MOSFET, ensure that the protection FET Rss(on) is balanced with the trip current setting of the protection IC to avoid false triggering during pulse loads. Layout should keep source-sense traces short to minimize parasitic loop inductance that can cause VDS overshoot during abrupt disconnect events.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para FC6B21150L — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
FC6B21100L
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
KFC6B21150L
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FC6B21150L Classificações máximas e características elétricas
| Manufacturer | Panasonic |
| Part Number | FC6B21150L |
| Device Type | Dual N-Channel MOSFET (gate resistor installed) |
| Application | Lithium-ion secondary battery protection circuits |
| VDS (Drain-Source Voltage) | 12 V |
| Continuous Drain Current (per channel) | 8 A |
| Rss(on) Typical @ VGS = 4.5 V | 4.0 mΩ |
| Rss(on) Typical @ VGS = 3.8 V | 4.3 mΩ |
| Package Type | CSP (Chip Size Package) |
| Package Size | 2.14 x 1.67 mm |
| Contagem de pinos | 6 |
| Tipo de montagem | Surface Mount |
| Nível MSL | 1 |
| Status RoHS | Compliant |
| Integrated Gate Resistor | Yes (built-in) |
| Channel Configuration | Dual N-channel, symmetrical |
Configuração de pinos do FC6B21150L
| Pino 1 | Source 1 (S1) — Source of MOSFET channel 1; connect to battery negative terminal |
| Pino 2 | Gate 1 (G1) — Gate of MOSFET channel 1; controlled by protection IC charge FET drive |
| Pino 3 | Drain 1 (D1) — Drain of MOSFET channel 1; common drain connection |
| Pino 4 | Drain 2 (D2) — Drain of MOSFET channel 2; common drain connection |
| Pino 5 | Gate 2 (G2) — Gate of MOSFET channel 2; controlled by protection IC discharge FET drive |
| Pino 6 | Source 2 (S2) — Source of MOSFET channel 2; connect to PACK negative terminal |
Área de Operação Segura (estimated from package thermal limits)
Aplicações típicas
FC6B21150L é adequado para 6 aplicaçãos: 1-Cell Li-ion Battery Protection ICs, TWS Earbud Charging Cases, Wearable Health Devices, Portable Power Banks, IoT Sensor Nodes, Compact BMS Front-End Protection.
1-Cell Li-ion Battery Protection ICs
The FC6B21150L's 12V VDS rating and 8A continuous drain current are well-matched for 1-cell Li-ion/Li-polymer battery protection modules where the protection IC monitors over-voltage, under-voltage, over-current, and short-circuit conditions. The dual N-channel configuration provides independent charge (high-side) and discharge (low-side) switching in compact 2-terminal packs, with Rss(on) of 4.0 mΩ at VGS = 4.5V minimizing conduction loss along the protection path. According to typical protection IC datasheets, the protection FET's on-resistance directly impacts voltage drop during high-load transients, so this low-Rss(on) part preserves battery efficiency.
Recomendado
TWS Earbud Charging Cases
The FC6B21150L's ultra-compact 2.14 x 1.67 mm CSP package is ideal for TWS earbud charging case battery protection where PCB real estate is severely constrained. With 8A current capability and 4.0 mΩ Rss(on) at VGS = 4.5V, it handles the high inrush currents from USB-C charging and earbud insertion events while maintaining low voltage loss. According to Panasonic datasheet, the device's MSL Level 1 rating simplifies SMT assembly in mass production. The integrated gate resistor eliminates external components, reducing BOM count in space-constrained designs.
Recomendado
Wearable Health Devices
The FC6B21150L's small footprint and low Rss(on) of 4.0 mΩ suit wearable health monitors such as fitness bands and smartwatches where single-cell Li-ion protection is required with minimal voltage drop. The 8A continuous drain rating supports high-burst-current loads such as heart-rate sensor LEDs and haptic feedback motors. According to battery protection design guidelines, the protection MOSFET should have Rss(on) below 10 mΩ to avoid excessive voltage drop during peak loads, making this part appropriate for typical wearable battery packs rated 100-500 mAh.
Recomendado
Portable Power Banks
The FC6B21150L provides bidirectional switching in portable power bank battery protection where both charge and discharge paths must be independently controlled. With 8A continuous current and 12V VDS, it handles power banks with 5V/2A USB output and 1-cell to 2-cell configurations. According to the Panasonic datasheet, the symmetrical dual-channel design allows the two MOSFETs to be used independently for charge/discharge control or paralleled for higher current capability. The 4.0 mΩ Rss(on) keeps discharge-path losses below 2% at 2A output.
Recomendado
IoT Sensor Nodes
The FC6B21150L supports battery protection in IoT sensor nodes powered by single-cell Li-ion/Li-polymer batteries where low standby current and reliable protection are essential. With VDS = 12V providing margin over the 4.2V max charge voltage, and Rss(on) of 4.0 mΩ keeping conduction loss minimal, the device preserves battery runtime for years-long deployments. According to industrial IoT design references, integrated gate resistors reduce BOM count and PCB complexity, important for cost-sensitive high-volume sensor deployments.
Recomendado
Compact BMS Front-End Protection
The FC6B21150L functions as the front-end protection switch in compact battery management systems (BMS) for single-cell Li-ion applications, providing the over-current and short-circuit disconnect path required by safety standards such as UL 1642 and IEC 62133. With 8A continuous drain current and 12V VDS, it covers most 1S consumer electronics applications including smartphones, tablets, and accessories. According to battery safety design references, the protection MOSFET must have sufficiently low Rss(on) to handle inrush currents during hot-plug events without triggering false over-current protection.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para FC6B21150L — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | FC6B21100L | KFC6B21150L |
|---|---|---|---|
| Package | CSP-6 (2.14 x 1.67 mm) | CSP-6 (2.14 x 1.67 mm) - same | CSP-6 (2.14 x 1.67 mm) - same |
| Brand | Panasonic | Panasonic | Nuvoton |
| VDS Rating | 12 V | 12 V | 12 V |
| Continuous Drain Current | 8 A | 6 A | 8 A |
| Integrated Gate Resistor | Yes | Yes | Yes |
| Channel Configuration | Dual N-channel | Dual N-channel | Dual N-channel |
| MSL Level | Level 1 | Level 1 | Level 1 |
| RoHS Compliance | Compliant | Compliant | Compliant |
Principais diferenciais
- Lower Rss(on) at 4.5V VGS (vs FC6B21100L)
- Higher continuous drain current rating (vs FC6B21100L)
- Direct cross-vendor drop-in availability (vs KFC6B21150L)
Notas de projeto
Estimated: At continuous 8A drain current with Rss(on) of 4.0 mΩ, conduction loss is approximately P = I² × R = 8² × 0.004 = 0.256 W per channel. The CSP package requires PCB thermal vias to the source pad (typically the largest thermal pad) to dissipate heat effectively. For pulse loads exceeding 10A during USB hot-plug events, monitor junction temperature with a thermocouple during characterization, as the small die size has limited thermal mass. Estimated junction temperature rise is 32 C/W × 0.256 W = ~8°C above ambient in steady state, well within limits.
Use a 4-layer PCB with the source pad on the top side connected to inner ground/power planes through an array of 0.3mm thermal vias for optimal heat spreading. Keep gate traces short (under 5mm) to minimize parasitic inductance that can cause VGS ringing during fast protection events. Place the protection IC within 3mm of the MOSFET gate pads to avoid trace-induced timing delays. Source-sense connections should be Kelvin-connected directly to the IC sense pin, not shared with power return paths.
Do not exceed VDS = 12V - even brief transients above this rating can permanently damage the MOSFET. Verify that the protection IC drives VGS above 4.5V for full enhancement; below 3V VGS, the Rss(on) increases dramatically (over 10 mΩ), causing excessive voltage drop and heat. The integrated gate resistor limits switching speed; for applications requiring faster turn-off, an external gate discharge circuit may be needed. Always confirm the protection IC's VGS drive capability matches this MOSFET's gate charge requirements.
Informações de conformidade
RoHS compliant per Panasonic product page. MSL Level 1 rating. AEC-Q100 not applicable - this is a consumer/industrial grade MOSFET not qualified for automotive applications.
