FDMF5822DC - Integrated Smart Power Stage | onsemi
N.º da peça: FDMF5822DC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.8613 | $0,86 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
FDMF5822DC Visão geral
A smart power stage is a power-management module that combines gate-drive circuitry, switching transistors, and often protection or monitoring functions. In the broader hierarchy, FDMF5822DC belongs to the gate-driver family, then to integrated power stages, synchronous buck converters, and power-management ICs. Integrating the driver and MOSFETs reduces external switching-loop inductance and board area while allowing the controller to drive a complete power stage.
The verified product description identifies the module as suitable for full or half-bridge drivers and synchronous buck converters. Its integrated bootstrap Schottky diode supports high-side bootstrap operation, while Fairchild SyncFET technology combines low-side MOSFET integration with a Schottky function. The integrated thermal monitor provides thermal-warning and thermal-shutdown functionality according to the manufacturer datasheet.
The package is specified as a 31-PQFN, 5 mm x 5 mm surface-mount module. The exposed package structure is intended to improve heat transfer from the power devices, but thermal performance still depends on PCB copper, vias, layout, ambient temperature, and the converter operating point. The package dimensions and datasheet electrical limits should be checked directly before final PCB release.
Typical uses include notebook-computer and embedded-computing power rails, point-of-load converters, CPU or GPU voltage regulation, telecommunications equipment, industrial controller supplies, and compact synchronous buck designs. A 3.3 V PWM input allows operation with compatible external PWM controllers, while the integrated power stage reduces the number of discrete gate-driver and MOSFET components.
When designing around FDMF5822DC, follow the manufacturer datasheet for pin mapping, PCB land pattern, thermal monitoring, gate-drive timing, dead time, and layout. Keep the high-current switching loop compact and provide adequate thermal copper and vias. This page combines verified manufacturer and distributor information with application guidance; unspecified electrical values are marked for data completion rather than estimated.
Alternativas drop-in para FDMF5822DC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
FDMF5822DC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →FDMF5822DC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →FDMF5822DC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →FDMF5822DC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →FDMF5822DC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →FDMF5822DC Classificações máximas e características elétricas
| Product Type | Integrated smart power stage module |
| Converter Type | Synchronous buck converter |
| Bridge Configuration | Full, half-bridge (H-bridge) driver |
| PWM Input Voltage | 3.3 V |
| Integrated Devices | Driver IC, two power MOSFETs, bootstrap Schottky diode, and thermal monitor |
| High-Side Drive | Integrated high-side power MOSFET |
| Low-Side Drive | Integrated low-side power MOSFET with SyncFET technology |
| Bootstrap Rectifier | Integrated bootstrap Schottky diode |
| PWM Input States | 3-state 3.3 V PWM input |
| Thermal Monitoring | Integrated thermal warning and thermal shutdown |
| Package Type | 31-PQFN |
| Package Dimensions | 5 mm x 5 mm |
| Tipo de montagem | Surface mount |
| Package Thermal Enhancement | Thermally enhanced package |
| Voltage Waveform Feature | Reduced-ringing voltage-waveform support |
| Supplier Packaging | Cut Tape (CT) |
| Manufacturer | onsemi |
Guia de Configuração de Pinos do FDMF5822DC thermally enhanced package
Configuração de pinos para FDMF5822DC (pacote thermally enhanced package). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para FDMF5822DC.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
FDMF5822DC é adequado para 6 aplicaçãos: Embedded Computing Power Rails, Point-of-Load DC-DC Conversion, Processor and Accelerator Voltage Regulation, Industrial Control Supplies, Telecommunications Equipment, Notebook and Portable Power Systems.
Embedded Computing Power Rails
The FDMF5822DC fits compact synchronous buck converters used in embedded computing and industrial-control systems. Its integrated driver and high-side and low-side MOSFETs reduce the number of discrete power-stage components, while the 31-PQFN 5 mm x 5 mm package supports space-constrained layouts. The 3.3 V PWM input can work with compatible controllers, and the integrated thermal monitor supports system-level monitoring. Design verification must confirm voltage, current, switching-frequency, dead-time, and thermal limits from the manufacturer datasheet.
Recomendado
Point-of-Load DC-DC Conversion
Use FDMF5822DC when a point-of-load converter needs a compact integrated switching stage. The module combines the driver IC, two power MOSFETs, and bootstrap Schottky diode in one thermally enhanced 31-PQFN package, reducing external gate-drive routing and board area. Its 3-state 3.3 V PWM input provides a defined interface for compatible controllers. The layout should minimize the high-current loop and use substantial exposed-pad copper and thermal vias for the intended switching and load conditions.
Recomendado
Processor and Accelerator Voltage Regulation
The integrated FDMF5822DC architecture is suited to high-current, small-footprint synchronous buck stages near processors or accelerators. Combining the driver with both MOSFETs can reduce parasitic inductance compared with a widely separated discrete arrangement, helping preserve switching performance. The 5 mm x 5 mm thermally enhanced package provides a defined thermal path, but the application still needs accurate RDS(ON), current-limit, temperature, and transient-response data from the complete onsemi datasheet before release.
Recomendado
Industrial Control Supplies
FDMF5822DC can serve in industrial control and embedded automation supplies where a compact synchronous buck stage is needed. The integrated smart power stage reduces assembly count and can simplify the power-tree layout compared with separate gate drivers and power MOSFETs. Its 3.3 V PWM interface is useful for compatible digital controllers, while the thermal monitor provides an additional protection-related signal or status function. Industrial designs must verify EMI behavior, temperature range, fault response, and long-term sourcing from the manufacturer documentation.
Recomendado
Telecommunications Equipment
The FDMF5822DC's integrated high-side and low-side power stage is applicable to compact synchronous buck converters in telecommunications and networking equipment. The 5 mm x 5 mm package can help reduce board area where multiple rails are required, and the integrated bootstrap Schottky diode supports the high-side drive arrangement. Thermal warning and thermal shutdown functions help monitor the module, but telecom requirements such as input range, isolation, conducted emissions, and temperature grade must be confirmed independently against the datasheet.
Recomendado
Notebook and Portable Power Systems
The FDMF5822DC is suitable for compact power-conversion stages in notebook, portable, and embedded systems where board area and switching-loop inductance are important. Integrating the driver and MOSFETs allows the converter to use a compact power-stage footprint, while the 3.3 V PWM input supports compatible controller architectures. Portable designs must carefully consider thermal dissipation, transient load response, battery-related input limits, and whether the package's verified operating range meets the system requirement.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para FDMF5822DC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | FDMF5822DC | FDMF5822DC | FDMF5822DC | FDMF5822DC | FDMF5822DC |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | onsemi |
| Package | 31-PQFN (5x5 mm) | 31-PQFN (5x5 mm) | 31-PQFN (5x5 mm) | 31-PQFN (5x5 mm) | 31-PQFN (5x5 mm) | 31-PQFN (5x5 mm) |
| Product Type | Integrated smart power stage | Integrated smart power stage | Integrated smart power stage | Integrated smart power stage | Integrated smart power stage | Integrated smart power stage |
| PWM Input | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Integrated Power Devices | Driver IC plus two power MOSFETs | Driver IC plus two power MOSFETs | Driver IC plus two power MOSFETs | Driver IC plus two power MOSFETs | Driver IC plus two power MOSFETs | Driver IC plus two power MOSFETs |
| Bootstrap Diode | Integrated bootstrap Schottky diode | Integrated bootstrap Schottky diode | Integrated bootstrap Schottky diode | Integrated bootstrap Schottky diode | Integrated bootstrap Schottky diode | Integrated bootstrap Schottky diode |
| Thermal Features | Thermal warning and thermal shutdown | Thermal warning and thermal shutdown | Thermal warning and thermal shutdown | Thermal warning and thermal shutdown | Thermal warning and thermal shutdown | Thermal warning and thermal shutdown |
| Verified Substitute | Not applicable; original device | Original manufacturer part | Original manufacturer part | Original manufacturer part | Original manufacturer part | Original manufacturer part |
Principais diferenciais
- Integrated driver and dual-MOSFET power stage (vs Discrete driver plus external MOSFET design)
- Defined 3.3 V PWM interface (vs Generic gate-driver interface)
- Integrated thermal monitoring (vs Basic power-stage module without the same verified monitoring feature)
- Compact package integration (vs Separate driver and MOSFET layout)
Notas de projeto
Use the official onsemi land pattern and pin table rather than a generic QFN footprint. Keep the high-side and low-side power-current loop compact, place the input and output capacitors close to the package power nodes, and route gate-drive traces away from sensitive feedback and control paths. The verified package is 31-PQFN, 5 mm x 5 mm, so pad assignment and exposed-pad connections must be verified against the datasheet before fabrication.
Treat the exposed package as part of the converter's thermal design. Estimated thermal calculations require the actual switching loss, RDS(ON), duty cycle, ambient temperature, board construction, and package thermal resistance; those values were not supplied in the retrieved data. Use the manufacturer thermal guidance and provide substantial copper plus thermal vias, especially when operating near the module's current or temperature limits.
The 3.3 V PWM interface should be routed as a short, clean control trace with attention to return current and coupling from the high-current switching node. Confirm controller PWM polarity, dead time, propagation behavior, and 3-state handling from the complete datasheet. Avoid relying on distributor pinout images or generic bridge-driver conventions, because the integrated module's control and fault pins must be assigned exactly as documented.
Do not select FDMF5822DC solely because it is a 3.3 V half-bridge module. Validate input-voltage range, output-current capability, switching frequency, MOSFET RDS(ON), bootstrap behavior, thermal limits, fault response, and package pin compatibility. The retrieved data does not provide all numeric ratings, so an unverified substitute or modified footprint should not be treated as drop-in compatible.
Informações de conformidade
Compliance status was not included in the retrieved verified data. Do not infer RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-mineral status from the manufacturer name or distributor listings.
