GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia
N.º da peça: GAN111-650WSB ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.4 | $5,40 |
| 10 | $4.85 | $48,50 |
| 100 | $4.1 | $410,00 |
| 500 | $3.45 | $1.725,00 |
| 1.000 | $2.95 | $2.950,00 |
GAN111-650WSB Visão geral
A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power transistor that operates as a higher-frequency, higher-efficiency successor to the silicon MOSFET in the power semiconductor hierarchy. Within the taxonomy GaN FET -> HEMT -> power transistor -> discrete semiconductor -> power management, GaN devices deliver lower on-resistance per unit area, faster switching edges, smaller magnetic components, and reduced conduction/switching losses compared with silicon superjunction MOSFETs at the same voltage rating.
Key features of the GAN111-650WSB include 650 V drain-source blocking voltage, 97 mΩ typical on-resistance (RDS(on)), and a normally-off architecture that simplifies gate drive and failsafe behavior. The TO-247 package offers industry-standard through-hole mounting with robust thermal performance for high-current applications. The cascode H2 HEMT topology provides a hardened gate that withstands standard silicon MOSFET gate-drive levels.
Typical applications include high-efficiency AC-DC and DC-DC converters, server and telecom switch-mode power supplies (SMPS), photovoltaic microinverters and string inverters, on-board chargers (OBC) for electric vehicles, and industrial motor drives. The 650 V rating also makes it suitable for three-phase PFC front ends and totem-pole bridgeless PFC topologies.
When designing with this device, ensure the gate driver can supply sufficient pull-down current to handle high dv/dt transitions, and place the gate-source loop as small as possible to minimize ringing. Compared with silicon superjunction MOSFETs of similar RDS(on), the GAN111-650WSB delivers substantially lower switching losses and supports higher switching frequencies, reducing magnetic component size.
This page synthesizes Nexperia datasheet parameters, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para GAN111-650WSB — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com GAN111-650WSB (mesmo formato e footprint) — diferindo em Package, Technology, Drain-Source Voltage (VDS), Mounting Type, Polarity.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
GAN041-650WSB
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
GAN063-650WSB
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
GAN110-650WSB
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IGLD60R070D1AUMA3
✅ Drop-In✓ Em estoque
$5.1 / unidade
Ver ficha técnica →GS66508T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
GAN111-650WSB Classificações máximas e características elétricas
| Manufacturer | Nexperia |
| Drain-Source Voltage (VDS) | 650 V |
| On-Resistance RDS(on) (typ) | 97 mΩ |
| Continuous Drain Current (ID, at Ta) | 21 A |
| Power Dissipation (PD, at Ta) | 107 W |
| Technology | GaN HEMT H2 (cascode, normally-off) |
| Polarity / Channel Type | N-Channel |
| Encapsulamento | TO-247 (SOT429) through-hole, 3-lead |
| Tipo de montagem | Through Hole |
| Configuration | Single FET |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) |
| Operating Mode | Normally-off (cascode) |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives |
| Status RoHS | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) |
Configuração de pinos do GAN111-650WSB
| Pino 1 | Gate — Standard silicon MOSFET compatible gate input |
| Pino 2 | Drain (Tab) — Drain connection (also via metal mounting tab) |
| Pino 3 | Source — Source connection (signal source) |
Forward Área de Operação Segura
Aplicações típicas
GAN111-650WSB é adequado para 6 aplicaçãos: Totem-Pole Bridgeless PFC Front End, Server & Telecom SMPS Primary Switch, Solar String Inverter DC-AC Stage, EV On-Board Charger (OBC) PFC Stage, Industrial Motor Drive Inverter, Datacenter 48 V Intermediate Bus Converter.
Totem-Pole Bridgeless PFC Front End
The GAN111-650WSB's cascode HEMT H2 topology eliminates body-diode reverse-recovery, making it ideal for totem-pole bridgeless PFC at 100-300 W to several kW. With 97 mΩ RDS(on) and 650 V blocking, the device supports CCM operation at 100 kHz-1 MHz switching frequency, reaching 98.5%+ efficiency with smaller magnetics than 650 V silicon superjunction MOSFETs. Place GaN FETs in the high-frequency leg; use standard silicon rectifiers in the slow leg. The standard MOSFET-compatible gate drive simplifies driver selection versus e-mode GaN devices.
Recomendado
Server & Telecom SMPS Primary Switch
In 1-3 kW server and telecom SMPS, the GAN111-650WSB serves as the primary-side switch in CCM hard-switched converters or as the 400 V PFC switch. Its 97 mΩ RDS(on) at 650 V class delivers 30-50% lower switching losses than silicon superjunction MOSFETs, enabling higher switching frequencies (200-500 kHz) and 20-40% smaller magnetic components. The TO-247 package offers robust thermal dissipation at 21 A continuous drain current and supports standard MOSFET gate drivers, reducing design complexity.
Recomendado
Solar String Inverter DC-AC Stage
In photovoltaic string inverters and microinverters, the GAN111-650WSB functions in the DC-AC bridge leg switching at 50-200 kHz. Its 650 V blocking handles 600 V DC bus transients with margin, and 97 mΩ RDS(on) reduces conduction losses under partial-load conditions where inverter efficiency matters most. The normally-off cascode topology ensures fail-safe behavior on grid loss events. Nexperia GaN FETs have demonstrated field reliability in solar inverters to LEO and terrestrial PV systems.
Recomendado
EV On-Board Charger (OBC) PFC Stage
In 3.3 kW to 11 kW EV on-board chargers, the GAN111-650WSB excels in the PFC and DC-DC primary stages where high efficiency and high power density are mandated. Its 97 mΩ RDS(on) supports continuous operation above 3 kW, and its cascode HEMT H2 topology enables bidirectional totem-pole PFC and DAB topologies for V2X applications. The TO-247 through-hole package handles thermal loads in automotive underhood environments with proper heatsinking.
Recomendado
Industrial Motor Drive Inverter
In 1-5 kW industrial motor drives, the GAN111-650WSB is suitable for the 400-480 V AC three-phase inverter leg where high switching frequency (>20 kHz) reduces motor winding losses and audible noise. The 97 mΩ RDS(on) and 21 A continuous rating cover most sub-3 kW drives; 650 V blocking provides 30% margin above rectified 480 V bus. GaN FETs also reduce dead-time, improving low-speed torque ripple versus silicon IGBT solutions.
Recomendado
Datacenter 48 V Intermediate Bus Converter
For 48 V to 12 V or 48 V to 5 V bus converters in AI/datacenter applications, the GAN111-650WSB can serve as the primary switch in 1-2 kW LLC or full-bridge topologies. Its 650 V rating provides headroom for 48 V input plus transient overshoot, while 97 mΩ RDS(on) supports high switching frequency (>500 kHz) for planar magnetics. GaN FETs at this frequency shrink the bus converter by 30-50% versus silicon solutions, addressing AI rack power-density pressure.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para GAN111-650WSB — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | GAN041-650WSB | GAN063-650WSB | GAN110-650WSB | IGLD60R070D1 | GS66508T |
|---|---|---|---|---|---|---|
| Brand | Nexperia | Nexperia | Nexperia | Nexperia | Infineon | GaN Systems |
| Package | TO-247 (SOT429) | TO-247 (SOT429) - same | TO-247 (SOT429) - same | TO-247 (SOT429) - same | TO-247 - same | GaNPX (T-Bot) - different footprint, NOT drop-in |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| RDS(on) typ | 97 mΩ | 41 mΩ (~58% lower) | 63 mΩ (~35% lower) | 110 mΩ (~13% higher) | 70 mΩ (~28% lower) | 50 mΩ (~48% lower) |
| Continuous Drain Current | 21 A (Ta) | 31 A (Ta) | 26 A (Ta) | 20 A (Ta) | 31 A (Ta) | 30 A (Tc) |
| Technology | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | CoolGaN e-mode | E-mode GaN |
| Normally-Off | Yes (cascode) | Yes (cascode) | Yes (cascode) | Yes (cascode) | Yes (e-mode) | Yes (e-mode) |
| Unit Price (qty-1, USD, as of 2026-10-11) | 5.40 | 9.20 (higher current, premium) | 6.80 | 5.10 | 7.20 | 8.40 |
Principais diferenciais
- Cascode HEMT H2 architecture allows standard gate-drive (vs GS66508T)
- Higher current than Infineon IGD60R070D1 in same package (vs IGLD60R070D1)
- Drop-in TO-247 replacement for silicon superjunction MOSFETs (vs Silicon superjunction MOSFET (e.g. IPW65R095C7A))
Notas de projeto
GaN FETs have far higher dv/dt and di/dt than silicon MOSFETs - place the gate driver as close as possible to the gate pin to minimize gate-loop inductance. Estimated: at 100 V/ns dv/dt, each 1 nH of gate-loop inductance generates 100 V ringing on the gate. Target gate-loop inductance below 5 nH by routing gate and source return on adjacent PCB layers with minimum loop area.
TO-247 packages require substantial heatsinking at 21 A continuous current. Estimated: at 21 A and 97 mΩ RDS(on), conduction loss is approximately 43 W, requiring a heatsink with thermal resistance under 2 C/W to keep junction rise below 80 C above ambient. Use thermal interface material rated for 6 W/m-K or better, and consider a forced-air solution for sustained high-current operation.
Do not exceed VGS ratings of the cascode MOSFET portion; the Nexperia GAN111-650WSB accepts standard ±20 V gate drive. Avoid slow gate transitions - turn-off propagation delay mismatch can cause shoot-through in half-bridge configurations. Use a gate driver with matched propagation delays and split turn-on/turn-off resistors to optimize switching speed without causing excessive ringing.
The TO-247 through-hole package requires adequate copper pad area on both source and drain sides. Estimated: at 100 kHz switching with 21 A, recommend at least 100 mm² of 2 oz copper pour connected to the drain tab, plus a 25 mm² source-side pour. Keep the switching-node copper minimal to avoid antenna-mode EMI emissions from the high dv/dt transitions.
GaN FETs produce higher EMI than silicon MOSFETs due to faster edge rates. Estimated: at 100 V/ns vs 20 V/ns for an equivalent silicon MOSFET, conducted EMI above 30 MHz can be 10-20 dB higher. Mitigate with a small common-mode choke on input/output lines, a small R-C snubber across the device, and ensure the PCB has a low-impedance return path for high-frequency switching currents.
Informações de conformidade
RoHS compliant per Nexperia product page. Not AEC-Q100 qualified - this is a discrete power FET primarily intended for industrial SMPS, solar, and OBC applications; AEC-Q100 qualification is not applicable for this product line.
