IKP15N60T - 600V 15A TRENCHSTOP IGBT TO-220 | Infineon
N.º da peça: IKP15N60T ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.15 | $2,15 |
| 10 | $1.92 | $19,20 |
| 100 | $1.62 | $162,00 |
| 500 | $1.38 | $690,00 |
| 1.000 | $1.18 | $1.180,00 |
IKP15N60T Visão geral
An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that combines the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Within the power semiconductor hierarchy, the IGBT sits between MOSFETs and thyristors: above MOSFETs for high-voltage (>400 V) applications where Rdson losses become excessive, and below thyristors where latching and conduction are desired. The "TRENCHSTOP" generation uses an etched-gate trench structure to improve channel density and reduce VCE(sat), while the "fieldstop" buffer minimises tail switching loss, which together push switching energies down by 40-50% versus planar PT devices. The co-packed EmCon HE freewheeling diode (HE = high efficiency) is reverse-recovery-soft, which reduces EMI and dv/dt stress on the companion switch.
Key features include: VCE(sat) of 1.5 V typical at rated current, VCE of 600 V (collector-emitter blocking), IC of 15 A continuous (DC collector current 26-30 A pulsed), anti-parallel EmCon HE diode rated to match the IGBT, 5 microsecond short-circuit withstand time, 175 °C maximum operating junction temperature, and 130 W maximum power dissipation. The TO-220 package provides a tab that serves as an exposed heatsink surface and a single mounting hole for a clip or screw.
The IKP15N60T is intended for hard-switched converter topologies at switching frequencies in the 4-30 kHz band. Typical deployments include uninterruptible power supplies (UPS), solar inverters, induction heating, and welding machine primary-side switches. The 600 V class rating leaves comfortable margin above rectified 230 V AC (peak 325 V DC) and 400 V rectified three-phase rails (≈565 V DC), allowing non-critical snubbers to be simplified. The 5 microsecond short-circuit withstand rating supports industrial motor drives that must survive transient overload conditions per IEC 60134-1.
For the design engineer, the critical decision is whether a co-packaged diode is wanted. The IKP15N60T includes the diode internally; bare IGBTs of the same generation (e.g. IGB15N60T, if available separately) require an external anti-parallel rectifier. The TO-220 package is footprint-compatible with virtually every discrete 600 V IGBT and MOSFET in the industry, simplifying PCB layout. Power dissipation must be checked: at 15 A and VCE(sat) of 1.5 V, conduction loss is ≈22.5 W; a clip-on or PCB-mount heatsink is mandatory.
This page synthesizes current distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and lay out the IKP15N60T with confidence.
Alternativas drop-in para IKP15N60T — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IKP20N60T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IKP10N60T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IKP06N60T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IKP15N60TXKSA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FGA15N60UFDTU
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IKP15N60T Classificações máximas e características elétricas
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous DC Collector Current (IC, TC=25°C) | 26 A (some sources 30 A) |
| VCE(sat) at IC=15A, Tj=25°C | 1.5 V (typical) |
| Power Dissipation (Ptot, TC=25°C) | 130 W |
| Short-Circuit Withstand Time (tsc, VCC=360V, Tj=150°C) | 5 microseconds |
| Maximum Junction Temperature (Tj max) | 175 °C |
| Anti-Parallel Diode Type | Emitter Controlled HE (co-packed, full-rated) |
| Technology | TRENCHSTOP + Fieldstop (IGBT3) |
| Encapsulamento | TO-220 (PG-TO220-3-1) 3-pin through-hole |
| Tipo de montagem | Through-Hole (TO-220 tab for heatsink) |
| RoHS Compliance | Compliant (lead-free finish) |
Configuração de pinos do IKP15N60T
| Pino 1 | Gate — Gate control input; drive with 15V on, -5 to 0V off |
| Pino 2 | Collector — Main current terminal (also tied to metal tab) |
| Pino 3 | Emitter — Main current return terminal; connect to gate driver ground |
Reverse Bias Área de Operação Segura (RBSOA)
Aplicações típicas
IKP15N60T é adequado para 7 aplicaçãos: Uninterruptible Power Supply (UPS) Inverter, Residential Solar String Inverter, Induction Heating Cooktop, Welding Machine Primary-Side Inverter, Industrial Motor Drive (Small HP), Switch-Mode Power Supply (SMPS) Primary Switch, Automotive On-Board Charger (Auxiliary).
Uninterruptible Power Supply (UPS) Inverter
The IKP15N60T fits single-phase UPS inverter stages operating from a 360-400 V DC bus. The 600 V VCE rating leaves comfortable margin above rectified 230 V mains (peak ≈325 V), the 15 A continuous rating supports 3-5 kVA inverter modules, and the co-packed EmCon HE diode eliminates the need for an external anti-parallel rectifier in the half-bridge leg. Compared to a discrete IGBT + diode solution, the DuoPack saves PCB area and reduces parasitic inductance in the gate-emitter loop. Switching frequency in UPS stages typically runs at 16-20 kHz, well within the TRENCHSTOP sweet spot where the 1.5 V VCE(sat) outperforms MOSFET Rds(on) losses.
Recomendado
Residential Solar String Inverter
The IKP15N60T is well-matched to residential single-phase solar string inverters with DC link voltages of 360-400 V derived from boosted PV input. The 600 V VCE class accommodates transient voltage spikes from transformer leakage inductance with adequate margin. Its 5 microsecond short-circuit withstand rating supports ground-fault detection events required by UL 1741 and IEC 62109. The co-packed EmCon HE diode handles transformer magnetizing current freewheeling without external components. Switching losses at 16-20 kHz are favorable due to the fieldstop layer, keeping efficiency above 96% in transformerless inverter designs.
Recomendado
Induction Heating Cooktop
The IKP15N60T serves as the primary-side resonant switch in induction heating cooktops operating at 20-30 kHz from rectified 230 V mains. The TRENCHSTOP technology's low VCE(sat) of 1.5 V minimizes conduction loss during the high-current half-cycle of the resonant tank, while the fieldstop layer reduces turn-off switching loss - critical for soft-switched quasi-resonant topologies. The 5 microsecond short-circuit withstand rating protects against pan-detection fault events. The TO-220 package mounts directly to the cooktop's heatsink chassis with a single screw, simplifying assembly. Its 175 °C Tj max rating supports sustained high-power cooking cycles.
Recomendado
Welding Machine Primary-Side Inverter
The IKP15N60T is a strong fit for the primary-side full-bridge of a compact welding inverter operating from rectified 230 V mains at switching frequencies of 20-50 kHz. The 600 V VCE rating handles the DC link of ≈325 V with margin for transformer leakage spikes. The 15 A continuous current supports stick/TIG welders up to 200 A output with proper transformer turns ratio. Short-circuit withstand of 5 microseconds is essential for surviving arc-strike transients and electrode short conditions. The co-packed EmCon HE diode provides clean freewheeling across the bridge without external components, reducing BOM cost.
Recomendado
Industrial Motor Drive (Small HP)
The IKP15N60T fits variable-frequency drives (VFDs) for fractional-horsepower industrial motors (1-3 HP) operating from 230 V single-phase or 400 V three-phase rectified mains. Its TO-220 package with clip-on heatsink provides adequate thermal dissipation for 5-10 kW drive stages. The 5 microsecond short-circuit withstand time satisfies IEC 60134-1 fault-clearing requirements. The co-packed EmCon HE diode reduces EMI from hard-switched motor regeneration events. The 15 A current rating supports continuous motor currents up to 12 A after thermal derating, ideal for pumps, fans, and conveyor motors.
Recomendado
Switch-Mode Power Supply (SMPS) Primary Switch
The IKP15N60T is used as the primary-side switch in hard-switched full-bridge or half-bridge SMPS topologies for industrial power supplies, telecom rectifiers, and high-power LED drivers operating from 230 V AC mains. The 600 V VCE rating handles 325 V DC link with margin for reflected leakage spikes. At 20-50 kHz switching frequency, the TRENCHSTOP technology balances conduction and switching losses better than older PT-IGBT generations. The co-packed EmCon HE diode handles transformer magnetizing current without external freewheeling components, reducing BOM and PCB area.
Recomendado
Automotive On-Board Charger (Auxiliary)
While the IKP15N60T is not AEC-Q100 qualified, it serves well in non-safety-critical auxiliary on-board charger (OBC) modules for e-bikes, golf carts, and low-voltage EV auxiliary converters operating from rectified 48-96 V battery stacks. The 600 V VCE rating provides massive margin in 96 V systems for reliable operation. The co-packed diode and 5 microsecond short-circuit withstand support fault-tolerant designs with clip-on mounting. Designers targeting AEC-Q100 should consider IGBTs from the Infineon automotive-grade portfolio.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IKP15N60T — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IKP20N60T | IKP10N60T | IKP06N60T | IKP15N60TXKSA1 | FGA15N60UFDTU |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TO-220 (PG-TO220-3-1) | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220-3 - same |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC) | 15 A | 20 A | 10 A | 6 A | 15 A | 15 A |
| VCE(sat) typical | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.7 V (typ) |
| Co-Packed Diode | EmCon HE (full-rated) | EmCon HE | EmCon HE | EmCon HE | EmCon HE | UF series diode |
| Technology | TRENCHSTOP + Fieldstop (IGBT3) | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | Fieldstop IGBT |
Principais diferenciais
- Integrated co-packed EmCon HE anti-parallel diode (vs IKP15N60T vs bare IGBTs (e.g., IGB15N60T))
- Higher current headroom within same TO-220 family (vs IKP20N60T vs IKP15N60T)
- Cross-brand pin-compatible alternative available (vs FGA15N60UFDTU (onsemi) vs IKP15N60T (Infineon))
Notas de projeto
Estimated: at IC=15 A and VCE(sat)=1.5 V, conduction loss is ~22.5 W at 100% duty. The TO-220 has a published RthJC of ~0.9-1.0 °C/W and RthJA of ~62 °C/W without heatsink. At full conduction loss and no heatsink, junction temperature would rise by 22.5 W × 62 °C/W = 1395 °C above ambient - clearly impossible. In practice, a clip-on heatsink with RthSA of ~5 °C/W (TO-220 clip, natural convection) is mandatory, reducing total RthJA to ~7 °C/W and junction rise to ~158 °C, still above Tj max of 175 °C. For continuous 15 A operation, use a fan-cooled or larger heatsink maintaining Tj below 150 °C.
Keep the gate-drive loop (gate-emitter) area as small as possible, ideally under 1 cm², to minimise parasitic inductance that can cause gate-oscillation and dv/dt-induced turn-on. Place the gate-driver supply decoupling capacitor (typically 100 nF ceramic) physically within 5 mm of the gate and emitter pins. The collector tab is a heatsink surface but is electrically live at collector potential; use a thermally conductive but electrically insulating pad (e.g., silicone with fiberglass) if the heatsink is grounded. A separate gate-source/emitter kelvin connection (pin 3 emitter return) improves switching performance at high di/dt.
Do not exceed VGE of ±20 V (absolute max); typical gate drive is +15 V on and -5 to -8 V off for hard-switched applications to provide noise margin against Miller-induced parasitic turn-on. Do not operate above Tj max of 175 °C; derate to 150 °C for long-term reliability per Arrhenius model. The IGBT must have a minimum gate resistance (typically 10-50 Ω) to limit di/dt and dv/dt, but too-high resistance increases switching loss - check the datasheet's recommended gate resistor range.
For through-hole TO-220 mounting, use a single M3 screw with a spring washer to maintain thermal contact pressure over thermal cycling. Apply a thin layer of thermal compound (e.g., Wakefield Type 120 or Shin-Etsu X-23) between the tab and heatsink. The TO-220 tab is rated for ~260 °C soldering for 10 seconds; use a clip-on heatsink for field-replaceable designs or solder the tab directly to a copper pour for higher thermal performance. Provide adequate creepage pads (≥6 mm clearance) on the PCB for the 600 V class.
Informações de conformidade
RoHS compliant per Infineon datasheet. Not AEC-Q100 qualified - this part targets industrial/commercial applications, not automotive safety-critical. For automotive-grade equivalents, consult Infineon's automotive IGBT portfolio.
