IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
N.º da peça: IPB021N10NM5LF2ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.1 | $5,10 |
| 10 | $4.55 | $45,50 |
| 100 | $3.8 | $380,00 |
| 500 | $3.2 | $1.600,00 |
| 1.000 | $2.75 | $2.750,00 |
IPB021N10NM5LF2ATMA1 Visão geral
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch where the gate voltage modulates conduction between drain and source. Linear FETs are a MOSFET sub-class engineered with a deliberately enlarged safe-operating area (SOA) so they can pass load current in the linear (unsaturated) region without entering thermal runaway — unlike switching MOSFETs, which are designed for full-on / full-off saturation operation. Linear FETs sit within the broader discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor, and are commonly used for inrush-current limiting and battery protection.
Key features include an ultra-low R_DS(on) of 2.1 mΩ at 10V gate drive, continuous drain current of 30A at 25°C ambient (176A at 25°C case), pulsed capability suited to hot-swap transients, avalanche-rated body diode, and a linear SOA optimized for sustained DC operation. The PG-TO263-3-2 package offers a low thermal resistance path via its exposed tab, dissipating 3.8 W on the PCB side and up to 375 W with case cooling.
Architecturally, this part uses Infineon's OptiMOS 5 trench-gate process with an enlarged die optimized for linear-mode DC current. The wide SOA is achieved through uniform cell distribution and a robust gate-oxide design that prevents localized hot-spotting when the device operates in the active region during pre-charge or current-limit phases.
Typical applications include hot-swap controllers in 48V telecom and server systems, battery-management system (BMS) charge/discharge FETs, e-fuse circuits, DC load switches, and industrial power tools. Its linear SOA makes it ideal for transient inrush events where a switching MOSFET would otherwise fail thermally.
A critical design tip: paralleling multiple IPB021N10NM5LF2 units requires matched R_DS(on) devices and shared gate-drive resistors to suppress parasitic oscillation; otherwise the unit with the lowest threshold will carry disproportionately more linear current and trigger premature SOA failure.
This page consolidates distributor pricing, drop-in same-package alternatives, and practical design notes — content not found together on the manufacturer datasheet — to accelerate part selection and PCB bring-up.
Alternativas drop-in para IPB021N10NM5LF2ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPB021N10NM5LF2ATMA1 (mesmo formato e footprint) — diferindo em Technology, Package, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPB025N10N3GATMA1
✅ Drop-In✓ Em estoque
$3.74 / unidade
Ver ficha técnica →IPB027N10N3GATMA1
✅ Drop-In✓ Em estoque
$1.62 / unidade
Ver ficha técnica →IPD031N03LGATMA1
✅ Drop-In✓ Em estoque
$0.41 / unidade
Ver ficha técnica →IPB021N10NM5LF2ATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A |
| R_DS(on) Maximum | 2.1 mΩ |
| Power Dissipation (P_D) at T_C=25°C | 375 W |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W |
| Encapsulamento | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Tipo de montagem | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Status RoHS | Compliant |
Configuração de pinos do IPB021N10NM5LF2ATMA1
| Pino 1 | Gate (G) — Gate drive input; controls channel conduction; V_GS rated to ±20V |
| Pino 2 | Drain (D) — Drain terminal; also connected to exposed metal tab on package back |
| Pino 3 | Source (S) — Source terminal; return path for load current and gate-drive reference |
| Pino Tab | Drain (D) - Exposed Tab — Exposed metal tab electrically tied to Drain (pin 2); provides primary thermal dissipation path via PCB solder connection |
Área de Operação Segura (DC, T_C=25°C)
Aplicações típicas
IPB021N10NM5LF2ATMA1 é adequado para 6 aplicaçãos: 48V Telecom Hot-Swap Controller, Battery Management System (BMS) Charge/Discharge Path, eFuse / Electronic Circuit Breaker, Industrial DC Load Switch, Server / Datacenter Power Distribution, Solar Inverter / PV Bypass Switch.
48V Telecom Hot-Swap Controller
The IPB021N10NM5LF2ATMA1 is purpose-built for 48V telecom hot-swap controller stages where it functions as the inrush-current-limiting pass element between the backplane supply and the bulk capacitors of an inserted line card. Its 100V V_DS rating comfortably covers the 48V nominal rail plus transient spikes up to 80V, while the 2.1 mΩ R_DS(on) keeps conduction loss to roughly 1.9W at 30A continuous load. Crucially, the OptiMOS 5 Linear FET 2 SOA is sized for sustained linear-region operation during pre-charge — typically 50–200 ms — at intermediate V_DS, a regime where standard switching MOSFETs would suffer localized thermal runaway. Compared with discrete NTC-based inrush limiters, the FET also provides fast active control via the gate, enabling faster retry on over-current faults.
Recomendado
Battery Management System (BMS) Charge/Discharge Path
In battery-management systems, the IPB021N10NM5LF2ATMA1 serves as the main charge/discharge disconnect switch between a lithium battery pack and the load or charger. Its 100V V_DS supports 14S–22S lithium packs up to 96V nominal, while the 176A case-rated continuous current supports high-power e-mobility and stationary storage applications. The Linear FET 2 SOA is the key advantage: during cell-balancing or pre-charge phases the device operates in the linear region for extended durations, and a standard switching MOSFET would risk secondary breakdown. The 2.1 mΩ R_DS(on) minimizes heat dissipation in the always-on conduction path, extending battery runtime and reducing cooling budget.
Recomendado
eFuse / Electronic Circuit Breaker
The IPB021N10NM5LF2ATMA1 is well suited as the switching element in eFuse and electronic circuit-breaker designs where fast active current limiting is required. Unlike traditional fuses, an eFuse using this Linear FET can detect over-current within microseconds, regulate the fault current to a programmed level via the gate, and auto-retry after a cool-down interval. Its linear SOA allows the device to absorb the fault energy during the active-limit phase without failing thermally. Typical applications include 24V/48V industrial bus protection, hot-swap boards, and server PSUs. The 2.1 mΩ R_DS(on) and D2PAK exposed tab support 30–50A continuous currents with minimal PCB copper area.
Recomendado
Industrial DC Load Switch
In industrial automation and process control, the IPB021N10NM5LF2ATMA1 functions as a high-current DC load switch for solenoids, motor windings, heaters, and inductive actuators operating at 24–80V. The 100V V_DS margin handles the back-EMF of inductive loads, while the 176A peak rating covers inrush and stall currents typical of brushed DC motors. The exposed D2PAK tab provides robust PCB heatsinking for continuous 30A operation. Compared with electromechanical relays, the FET offers silent operation, millions of switching cycles, and precise PWM control, while the Linear FET SOA handles the soft-start transition smoothly.
Recomendado
Server / Datacenter Power Distribution
In 48V server and hyperscale-datacenter power-distribution units, the IPB021N10NM5LF2ATMA1 serves as the bulk hot-swap and OR-ing FET between the 48V bus and downstream DC-DC converters. Its 100V rating matches the open-architecture 48V rail standard adopted by OCP, while the 2.1 mΩ R_DS(on) minimizes I²R losses across the hundreds of amps flowing through rack-level distribution. The Linear FET 2 SOA handles the inrush of multiple parallel DC-DC converters charging their input capacitors during board insertion, a thermal regime that would defeat conventional switching MOSFETs. Server-grade reliability is enhanced by the wide -55°C to +175°C operating range.
Recomendado
Solar Inverter / PV Bypass Switch
The IPB021N10NM5LF2ATMA1 is suitable as a bypass or disconnect switch in solar inverter topologies operating at 48–96V PV string voltages. Its 100V V_DS provides safety margin above typical 80V maximum-power-point strings, while the Linear FET 2 characteristic enables controlled pre-charge of inverter bulk capacitors upon PV connection. The 176A pulsed current capability supports the high inrush during capacitor charging, and the wide thermal operating range tolerates outdoor inverter cabinet environments up to 85°C ambient. Compared with electromechanical DC contactors, the FET provides silent, arc-free switching at high cycling rates.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPB021N10NM5LF2ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPB025N10N3GATMA1 | IPB027N10N3GATMA1 | IPD031N03LGATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Drain-Source Voltage (V_DS) | 100 V | 100 V | 100 V | 30 V |
| R_DS(on) Maximum | 2.1 mΩ | 2.5 mΩ | 2.7 mΩ | 3.1 mΩ |
| Technology Family | OptiMOS 5 Linear FET 2 | OptiMOS (standard switching) | OptiMOS (standard switching) | OptiMOS 3 |
| Linear SOA Optimized | Yes (Linear FET 2) | No (standard switching) | No (standard switching) | No |
Principais diferenciais
- Linear FET 2 SOA optimized for sustained linear-region operation (vs IPB025N10N3GATMA1)
- Lower R_DS(on) than nearest D2PAK siblings (vs IPB027N10N3GATMA1)
- 100V voltage class vs lower-voltage alternatives (vs IPD031N03LGATMA1)
Notas de projeto
The D2PAK exposed tab is the primary thermal path. For 30 A continuous operation (T_A=25°C, PCB-mounted), the datasheet specifies 3.8 W dissipation, requiring at least 6 cm² of copper area on the drain tab footprint per the Infineon PCB guidelines. Estimated: at 30A with 2.1 mΩ R_DS(on), conduction loss is 1.89W; the remaining 1.9W budget supports switching and gate-drive losses. For case-mounted 100A+ operation, use an external heatsink with thermal interface material rated to <0.5°C/W.
Place the gate-drive resistor (typically 10–100 Ω) as close as possible to the gate pin to suppress parasitic oscillation caused by the gate-source capacitance and source-lead inductance. Keep the high-current drain loop area minimal — route the drain tab directly to the bulk capacitor with the shortest possible trace to limit voltage transients during switching. The exposed tab should be soldered to a flooded copper pad with multiple thermal vias to the inner PCB ground plane.
Do not operate the IPB021N10NM5LF2 in the linear region beyond the datasheet SOA curve — even with the enhanced Linear FET 2 design, sustained linear-region operation at high V_DS causes thermal runaway. For hot-swap applications, implement active gate control via a dedicated hot-swap controller IC that regulates V_GS to maintain safe current during pre-charge. Estimate: at 80V V_DS and 10A linear current, instantaneous dissipation is 800W — far exceeding the 375W T_C=25°C rating — so duty cycle must remain <5% or the part must be fully cooled.
Use a minimum of 6 thermal vias (0.3 mm drill, 1 mm pitch) under the D2PAK exposed tab to conduct heat to the inner ground plane. The tab is electrically tied to the drain, so the via pattern must be isolated from low-voltage signal layers or designed as a deliberate thermal-only connection. Keep the source pin trace wide (≥3 mm) to minimize parasitic source inductance, which degrades switching performance and can cause gate-oxide over-voltage during fast dV/dt events.
Informações de conformidade
RoHS and REACH compliance confirmed by Infineon product page. Not AEC-Q100 qualified (industrial/consumer grade). Lead-free and halogen-free per Infineon OptiMOS 5 family datasheet.
