IPW65R041CFD - 650V 41mOhm 68.5A CoolMOS MOSFET | Infineon
N.º da peça: IPW65R041CFD ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $7.2 | $7,20 |
| 10 | $6.55 | $65,50 |
| 100 | $5.85 | $585,00 |
| 500 | $5.25 | $2.625,00 |
| 1.000 | $4.68 | $4.680,00 |
IPW65R041CFD Visão geral
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in circuits. Within the power management hierarchy, superjunction MOSFETs such as Infineon CoolMOS sit at the high-voltage end of the MOSFET family, using charge-balanced vertical structures to achieve far lower on-resistance per die area than conventional planar MOSFETs at 500 V to 950 V class ratings.
Key features of the IPW65R041CFD include an extremely low figure-of-merit combining RDS(on) with gate charge and output charge (EOSS), an integrated fast body diode for hard- and soft-switching topologies, and a 500 W power dissipation rating at a case temperature of 25 C per DigiKey listings. The low 41 mOhm on-resistance minimizes conduction losses in high-current paths, while the low gate charge of approximately 300 nC reduces gate-drive losses in high-frequency switching converters.
Technically, the CFD2 generation is Infineon's second generation of market-leading high-voltage CoolMOS MOSFETs with an integrated fast body diode. The superjunction charge-balance principle allows vertical electric field uniformity, enabling the 650 V breakdown rating together with ultra-low specific on-resistance. According to Infineon, the 600 V CoolMOS CFD7 family is positioned as the successor for new designs, offering further reduced switching and commutation losses.
Typical applications include switch-mode power supplies (SMPS), PFC stages, LLC and other resonant converters, solar inverters, welding equipment, and industrial motor drives where 650 V blocking capability, low conduction loss, and a fast body diode are required.
When designing with this device, the through-hole TO-247 package requires careful thermal design: mounting to an adequately sized heatsink and using thermally conductive interface material is essential at continuous currents approaching the 68.5 A rating, and gate-drive layout should minimize loop inductance to control ringing.
This page synthesizes distributor pricing, drop-in alternatives across same-family and cross-brand sources, and practical design notes not consolidated in the manufacturer datasheet alone.
Alternativas drop-in para IPW65R041CFD — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPW65R041CFD (mesmo formato e footprint) — diferindo em Package, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPW65R045CFD
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPW65R055CFD
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPW65R099CFD
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPW60R041CFD7
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
VBP165R47S
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPW65R041CFD Classificações máximas e características elétricas
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| Technology | CoolMOS CFD2 (superjunction, fast body diode) |
| Drain-Source Breakdown Voltage V(BR)DSS | 650 V |
| On-Resistance RDS(on) | 41 mOhm |
| Continuous Drain Current ID | 68.5 A (Tc) |
| Power Dissipation PD | 500 W (Tc) |
| Total Gate Charge Qg | 300 nC |
| Body Diode | Integrated fast body diode |
| Encapsulamento | PG-TO247-3 (TO-247, through-hole) |
| Tipo de montagem | Through Hole |
| Package Color / Material | Green plastic (halogen-aware molding per digchip listing) |
| Status RoHS | Compliant (GREEN package per digchip specification listing) |
| Application Segment | Industrial |
Configuração de pinos do IPW65R041CFD
| Pino 1 | Gate — Gate control terminal |
| Pino 2 | Drain — Drain terminal (also connected to mounting tab) |
| Pino 3 | Source — Source terminal |
Área de Operação Segura
Aplicações típicas
IPW65R041CFD é adequado para 6 aplicaçãos: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Stages, LLC and Resonant Converters, Solar Inverters, Welding Equipment, Industrial Motor Drives.
Switch-Mode Power Supplies (SMPS)
The IPW65R041CFD fits offline SMPS primary-side switching because its 650 V breakdown covers 230 VAC rectified buses with margin, and its 41 mOhm on-resistance cuts conduction loss in high-current flyback and forward stages. The CoolMOS CFD2 optimization of RDS(on) x Qg and RDS(on) x EOSS reduces both gate-drive and switching energy per cycle, enabling higher switching frequencies and smaller magnetics. The integrated fast body diode supports controller timing transitions. Mounted in PG-TO247-3 with a properly sized heatsink, it handles kilowatt-class supplies; designers should budget a low-inductance gate loop and verify thermal margin at worst-case load per Infineon application guidance.
Recomendado
Power Factor Correction (PFC) Stages
In continuous-conduction-mode boost PFC, the IPW65R041CFD's 650 V rating safely withstands 400 V bus transients while its 41 mOhm on-resistance minimizes conduction loss at inductor peak currents. The superjunction structure's low output charge (EOSS) lowers turn-off energy, improving efficiency above 99 percent in well-tuned boost stages. The fast body diode tolerates the restart and transient events typical of PFC operation. Infineon's CoolMOS family is widely documented for PFC designs in its application notes, and the TO-247 through-hole package simplifies thermal design for industrial PSUs; a snubber or gate resistor tuning pass is recommended to contain turn-off ringing at the drain node.
Recomendado
LLC and Resonant Converters
The IPW65R041CFD excels in LLC half-bridge and full-bridge resonant converters because CoolMOS CFD2 technology explicitly minimizes switching, commutation, and conduction losses, the exact loss mechanisms that dominate resonant topologies. Its low gate charge (approximately 300 nC) reduces dead-time drive burden, and the fast integrated body diode handles the zero-voltage-switching intervals inherent to LLC operation without excessive reverse-recovery loss. With 41 mOhm on-resistance, conduction loss stays low at kilowatt-level output currents, and the 650 V rating covers 400 V PFC-fed bus rails. Place the device close to the resonant tank, minimize loop inductance, and confirm ZVS across the load range for maximum efficiency benefit.
Recomendado
Solar Inverters
Grid-tied solar string inverters require 600 V to 650 V class switches on the DC-link or H-bridge, and the IPW65R041CFD's 650 V rating plus 41 mOhm on-resistance directly improve conversion efficiency, which translates into more harvested energy over the inverter lifetime. The low RDS(on) x EOSS figure-of-merit reduces switching loss at the 16 kHz to 50 kHz PWM frequencies common in solar stages, and the fast body diode supports reactive power flows demanded by grid codes. The industrial-grade qualification and through-hole TO-247 package ease thermal management in sealed outdoor enclosures. Designers should derate for high ambient temperatures and apply appropriate creepage and clearance for the 650 V domain.
Recomendado
Welding Equipment
Inverter-based welders convert rectified mains to a high-frequency, high-current secondary, and the IPW65R041CFD is suited to the primary bridge thanks to its 650 V blocking, 68.5 A continuous current capability at controlled case temperature, and 500 W dissipation rating. The 41 mOhm on-resistance limits conduction heating during long duty-cycle welds, while the CoolMOS CFD2 fast body diode survives the hard-commutation events that occur at arc strike and short-circuit transitions. Its rugged superjunction structure and industrial qualification target exactly this environment. Robust gate drive with negative off-state bias, snubber design, and forced-air cooling of the TO-247 package are recommended for reliable welder operation.
Recomendado
Industrial Motor Drives
For low-voltage three-phase drives powered from rectified three-phase mains, the DC bus sits near 565 V to 620 V, within the IPW65R041CFD's 650 V rating. Its 41 mOhm on-resistance keeps inverter conduction losses low at drive-rated currents, and the fast body diode provides the freewheeling path for inductive motor current during PWM switching. The low gate charge allows higher PWM carrier frequencies, reducing acoustic motor noise and current ripple. Designers should verify the device's avalanche and diode-recovery robustness against datasheet limits, implement desaturation or overcurrent protection in the gate drive, and mount the TO-247 package to a heatsink sized for continuous full-load operation in the drive enclosure.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPW65R041CFD — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPW65R045CFD | IPW65R055CFD | IPW65R099CFD | IPW60R041CFD7 | VBP165R47S |
|---|---|---|---|---|---|---|
| Package | PG-TO247-3 | PG-TO247-3 - same | PG-TO247-3 - same | PG-TO247-3 - same | PG-TO247-3 - same | TO-247 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Will Semiconductor (VBsemi) |
| VDS Breakdown Voltage | 650 V | 650 V | 650 V | 650 V | 600 V | 650 V |
| RDS(on) | 41 mOhm | 45 mOhm | 55 mOhm | 99 mOhm | 41 mOhm | 47 mOhm (class) |
| Technology | CoolMOS CFD2 (fast body diode) | CoolMOS CFD2 | CoolMOS CFD2 | CoolMOS CFD2 | CoolMOS CFD7 (successor generation) | Superjunction |
| Drop-in Compatibility | Reference part | Pin-to-pin, same footprint | Pin-to-pin, same footprint | Pin-to-pin, same footprint | Pin-to-pin, verify 600 V margin | Pin-to-pin per VBsemi |
Principais diferenciais
- Lowest on-resistance in its TO-247 CFD2 subfamily (vs IPW65R045CFD)
- 650 V rating vs CFD7 successor (vs IPW60R041CFD7)
- Manufacturer-documented fast body diode (vs VBP165R47S)
Notas de projeto
Estimated: at 10 A continuous and 41 mOhm, conduction loss alone is about 4.1 W (P = I2 x R). Adding switching losses at 50 kHz to 100 kHz in a hard-switched stage, total dissipation can exceed 15 W to 30 W. With TO-247 junction-to-case resistance on the order of tenths of a C/W, nearly all thermal resistance lies in the isolator and heatsink; use a mica or silicone pad plus a heatsink with thermal resistance below 2 C/W, and target junction temperatures below 100 C to 110 C for reliability. Derate the 68.5 A rating by case temperature per the datasheet transfer curves.
Keep the gate-drive loop as short as possible between the gate driver output, gate resistor, IPW65R041CFD pin 1, and the driver return (source, pin 3). Superjunction MOSFETs exhibit high transconductance and can oscillate in the hundreds of MHz if the gate sees parasitic inductance with no damping. Use a gate resistor of 5 to 20 ohms (tune for EMI versus switching loss), place a pull-down resistor of 10 kOhm at the gate, and twist or plane the gate return. Keep the power loop (bus capacitor, drain, source, shunt) compact to limit drain-voltage overshoot.
Three common pitfalls: (1) Applying the 600 V CFD7 successor (IPW60R041CFD7) on a 650 V bus without margin analysis - the 50 V reduction may be unacceptable in your design. (2) Ignoring the fast body diode's role in bridge topologies - its recovery behavior differs from planar MOSFETs; verify commutation robustness in bridge legs per Infineon application notes on CoolMOS body diode use. (3) Over-driving the gate beyond ratings - confirm VGS limits in the datasheet before selecting a driver, as the provided web data does not state the VGS rating.
Informações de conformidade
RoHS compliance inferred from the digchip specification listing describing the package as GREEN plastic (Infineon green package). REACH, halogen-free, and conflict-minerals status not stated in provided data - request official Infineon declarations.
