IRF7410TRPBF - -12V P-Channel HEXFET MOSFET, 16A, SO-8 | Infineon
N.º da peça: IRF7410TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.96 | $0,96 |
| 10 | $0.78 | $7,80 |
| 100 | $0.62 | $62,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.44 | $440,00 |
| 2.500 | $0.38 | $950,00 |
IRF7410TRPBF Visão geral
A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by p-type semiconductor material and the device is turned on by pulling the gate voltage below the source voltage. In the system hierarchy, this places the IRF7410TRPBF within discrete semiconductors > MOSFETs > power MOSFETs > P-channel enhancement-mode MOSFETs > HEXFET family. P-channel parts are commonly used as high-side switches in load-management circuits, where driving the gate negative relative to the source is straightforward and eliminates the need for a charge pump.
Key electrical features include a drain-source breakdown voltage (VDS) of -12V, a typical gate-source threshold (VGS(th)) of around -1V, a low gate charge of 91 nC, and the low 7 mOhm RDS(on) figure that minimizes conduction loss. The HEXFET process is silicon-optimized for switching frequencies below 100 kHz and offers a planar cell structure that broadens the safe operating area (SOA) for pulsed and direct-current loads.
The IRF7410TRPBF uses Infineon's HEXFET power MOSFET technology with a planar cell layout that distributes current evenly across the die, reducing hot-spotting and improving avalanche ruggedness. Product qualification is per JEDEC standards, and the part is specified to industrial temperature grades. The SO-8 package provides a low thermal resistance path when soldered to a 1-square-inch or larger copper pour, and it accepts standard surface-mount assembly.
Typical applications include battery management and load switching in portable electronics, high-side switching in power ORing and reverse-polarity protection circuits, DC-DC converters operating at low voltages, motor drive and solenoid drivers, and LED backlight or display power switching. The low gate charge and fast switching transitions also suit hot-swap controllers and inrush limiters in distributed-power systems.
When designing with this part, ensure the VDS rating is never exceeded, especially during inductive turn-off transients, and place a TVS or snubber across the drain-source path if switching inductive loads. For highest efficiency, drive the gate with a strong pull-down (low impedance) so that VGS swings quickly between logic high and the threshold region. This page synthesizes distributor pricing, drop-in SO-8 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para IRF7410TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRF7410PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7410TRPBF-1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7406TRPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7425TRPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7401TRPBF
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IRF7422D2TRPBF
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IRF7410TRPBF Classificações máximas e características elétricas
| FET Type | P-Channel |
| Technology | HEXFET (Planar cell, IR MOSFET) |
| Drain-Source Voltage (VDS) | -12 V |
| Continuous Drain Current (ID) at Ta | -16 A |
| Power Dissipation (PD) at Ta | 2.5 W |
| On-Resistance RDS(on) max at VGS=-10V | 7 mOhm |
| Gate Charge (Qg) | 91 nC |
| Encapsulamento | SO-8 (SOIC-8) |
| Tipo de montagem | Surface Mount |
| Switching Frequency (Optimized) | Below 100 kHz |
| Qualification | JEDEC standard |
| Status RoHS | Compliant (Pb-free suffix 'PBF') |
| Nível MSL | 1 (per JEDEC J-STD-020) |
Configuração de pinos do IRF7410TRPBF
| Pino 1 | Source (S) — Source terminal 1 (electrically common with thermal pad) |
| Pino 2 | Source (S) — Source terminal 2 (electrically common with thermal pad) |
| Pino 3 | Source (S) — Source terminal 3 (electrically common with thermal pad) |
| Pino 4 | Gate (G) — Gate control input - drive below source threshold to turn on P-channel |
| Pino 5 | Drain (D) — Drain terminal 1 |
| Pino 6 | Drain (D) — Drain terminal 2 |
| Pino 7 | Drain (D) — Drain terminal 3 |
| Pino 8 | Drain (D) — Drain terminal 4 |
IRF7410TRPBF Área de Operação Segura (DC)
Aplicações típicas
IRF7410TRPBF é adequado para 6 aplicaçãos: Battery Management & Load Switching, High-Side Power ORing & Redundancy, DC-DC Converter Synchronous Rectifier, Motor Drive & Solenoid Switching, LED Backlight & Display Power Switching, Reverse-Polarity & Inrush Protection.
Battery Management & Load Switching
The IRF7410TRPBF's -12V VDS and 7 mOhm RDS(on) make it a natural fit for high-side load-switch and battery-pack management circuits on 1-3S Li-ion rails up to 12.6V. Placed on the high side of the load with a ground-referenced gate drive, the part toggles load current up to 16A (Ta) with only tens of milliwatts of conduction loss. Its 91 nC gate charge allows sub-microsecond switching, suitable for power-path ORing and reverse-polarity protection. Compared with a Schottky-diode solution, the MOSFET drops only millivolts at 16A, preserving battery runtime and reducing thermal stress on the PCB. Designers typically pair it with a small P-channel gate-driver or directly from a GPIO with a pull-down resistor for sub-5A switching.
Recomendado
High-Side Power ORing & Redundancy
In redundant power architectures such as telecom 12V rails, the IRF7410TRPBF serves as a low-loss P-channel ORing switch that prevents back-feed between supplies. With -12V VDS and only 7 mOhm RDS(on), the part drops about 70 mV at 10A - far less than a Schottky diode, so power dissipation is well under 1W and heatsinking is unnecessary on a moderate copper pour. The 91 nC gate charge supports fast switching for hot-swap transitions, and the planar HEXFET cell structure delivers broad SOA for inrush events. P-channel topology avoids the charge pump needed for N-channel high-side switches, simplifying the gate drive to a single ground-referenced control line.
Recomendado
DC-DC Converter Synchronous Rectifier
The IRF7410TRPBF is well suited as the low-side synchronous rectifier in non-isolated buck converters operating from 5V or 12V rails, where its 7 mOhm RDS(on) minimizes conduction loss. The P-channel part pairs with an N-channel high-side FET, and at sub-100 kHz switching the 91 nC gate charge and planar cell structure deliver clean transitions with low switching loss. Compared with a Schottky rectifying diode, the MOSFET cuts rectification loss by 50-70%, raising converter efficiency by 2-4 percentage points at 5-10A loads. Designers should provide a small RC snubber across the drain-source to dampen ringing in the dead-time interval.
Recomendado
Motor Drive & Solenoid Switching
The IRF7410TRPBF's 16A continuous drain rating and -12V VDS suit small brushed-DC motor and solenoid switching in automotive and industrial subsystems. Driven by a low-side or high-side gate signal, the part switches inductive loads with fast edges, and the planar HEXFET SOA absorbs the avalanche energy during freewheeling turn-off. The 7 mOhm RDS(on) keeps continuous dissipation under 0.5W at 8A, allowing the SO-8 to be used without an external heatsink on a 1-square-inch copper pour. A flyback diode or TVS clamp is recommended across inductive loads to keep VDS transient below the -12V rating.
Recomendado
LED Backlight & Display Power Switching
In LED backlight drivers and large display panels, the IRF7410TRPBF acts as a high-side PWM switch that delivers up to 16A per channel with negligible voltage drop. The 7 mOhm RDS(on) and -12V VDS comfortably handle 8-12V rail backlights, while the 91 nC gate charge supports PWM dimming up to several kHz for brightness control. Compared with a BJT switch, the MOSFET eliminates base-drive current and lowers thermal rise, improving LED junction-temperature stability and color consistency. Plan for a small gate-series resistor (10-100 ohm) to control edge rate and reduce EMI in display cables.
Recomendado
Reverse-Polarity & Inrush Protection
The IRF7410TRPBF is a popular choice for reverse-polarity and inrush-current protection at the input of 12V battery-powered equipment. Wired source-to-load and gate to ground with a Zener clamp, the part blocks reverse battery connection up to -12V and limits steady-state drop to a few millivolts at 10A. During hot-plug inrush, the 91 nC gate charge and planar HEXFET SOA absorb the surge without latching, and the 7 mOhm RDS(on) keeps voltage sag below 100 mV even at peak current. This topology is widely used in automotive infotainment, e-bike controllers, and USB-PD sinks to replace bulky Schottky reverse-protection diodes.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRF7410TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRF7410PBF | IRF7410TRPBF-1 | IRF7406TRPBF | IRF7425TRPBF | IRF7401TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| FET Type | P-Channel HEXFET | P-Channel HEXFET | P-Channel HEXFET | P-Channel HEXFET | P-Channel HEXFET | P-Channel HEXFET |
| Drain-Source Voltage (VDS) | -12 V | -12 V (same) | -12 V (same) | -30 V (higher headroom) | -30 V (higher headroom) | -20 V (higher headroom) |
| Continuous Drain Current (ID) | -16 A (Ta) | -16 A (same) | -16 A (same) | -8.5 A (lower) | -15 A (similar) | -10 A (lower) |
| RDS(on) max at VGS=-10V | 7 mOhm | 7 mOhm (same) | 7 mOhm (same) | 20 mOhm (higher loss) | 13 mOhm (higher loss) | 9.5 mOhm (higher loss) |
| Power Dissipation (PD) at Ta | 2.5 W | 2.5 W (same) | 2.5 W (same) | 2.5 W (same) | 2.5 W (same) | 2.5 W (same) |
Principais diferenciais
- Lowest on-resistance in -12V P-channel HEXFET family (vs IRF7406TRPBF)
- Higher -12V-optimized current rating than -30V siblings (vs IRF7425TRPBF)
- Single P-channel die vs dual P-channel alternatives (vs IRF7422D2TRPBF)
Notas de projeto
At ID = 10A and RDS(on) = 7 mOhm, conduction loss is approximately I^2 x R = 0.7W. Estimated: 1-square-inch copper pour on SO-8 keeps theta_JA near 50 C/W, so the junction temperature rise is around 35C above ambient - safe up to about 12A continuous. For 14-16A sustained loads, increase the pour to 2-4 sq-in or add a small heatsink tab to keep Tj below 125C.
Use a wide, short drain-source loop and stitch vias around the SO-8 thermal pad to maximize heat spreading. Place the gate-drive resistor (10-100 ohm) within 5mm of pin 4 to suppress ringing. Keep the gate trace away from the drain trace to avoid capacitive coupling that could re-trigger the device during fast transients.
Do not drive the gate from a high-impedance source when the part is hot - leakage through Crss can hold the channel partially on and cause thermal runaway. Always include a pull-down resistor (10-100 kOhm) from gate to source so the MOSFET defaults to OFF on power-up. When switching inductive loads, add a TVS clamp or RC snubber to keep VDS below -12V during turn-off transients.
Informações de conformidade
RoHS compliance confirmed by Pb-free suffix 'PBF' in MPN per Infineon product page. JEDEC-qualified per the manufacturer datasheet. AEC-Q100 not specifically listed - consult Infineon for automotive-grade variants if required.
