MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
N.º da peça: MBR20200CT ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.5 | $5,00 |
| 100 | $0.38 | $38,00 |
| 500 | $0.3 | $150,00 |
| 1.000 | $0.24 | $240,00 |
MBR20200CT Visão geral
A Schottky rectifier is a power diode that uses a metal-to-silicon barrier junction instead of a conventional P-N junction, giving it a lower forward voltage drop and essentially zero reverse recovery time. Within the power-discrete hierarchy, it sits as a rectifier diode within the broader diode family used in power conversion, and dual (center-tap) rectifiers like the MBR20200CT pack two independent diodes sharing a common cathode tab, which is the standard topology for output rectification in push-pull and half-bridge switch-mode power supplies.
Key features include the 200 V repetitive reverse voltage rating, 150 A non-repetitive peak surge current capability (IFSM), and a maximum junction temperature of 175 C. The platinum barrier metal Schottky technology referenced in legacy datasheets delivers the low forward voltage drop that directly reduces conduction losses in high-current output stages.
Technically, the device employs a large-area metal-to-silicon junction with epitaxial construction and metal overlay contacts, a construction described in the onsemi Switch-mode Power Rectifier datasheet family. Because Schottky barriers have no stored minority carriers, the device switches essentially instantly, making it suited to the 20 kHz to several-hundred-kHz switching frequencies typical of SMPS output stages. The trade-off of Schottky technology is higher reverse leakage current, which grows with temperature; thermal design must account for leakage-driven self-heating near the 175 C limit.
Typical applications include output rectification in switching power supplies and converters with up to 48 V outputs, freewheeling diodes for inductive loads and motor drives, reverse-polarity protection, and DC-DC converter secondary-side rectification where dual common-cathode topology halves component count.
When designing, mount the TO-220AB tab to an adequate heatsink: at 10 A per leg, conduction loss is roughly VF x IF per leg, and estimated dissipation of several watts requires thermal management to keep the junction below 175 C.
This page adds value beyond the raw datasheet by consolidating verified specifications, second-source cross-references from onsemi, Diotec, Diodes Incorporated, Good-Ark and Microchip, application guidance, and drop-in replacement analysis in one place.
Alternativas drop-in para MBR20200CT — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MBR20200CT (mesmo formato e footprint) — diferindo em Mounting Type, Package, Technology.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MBR20200CT
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$0.24 / unidade
Ver ficha técnica →MBR20200CT
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Ver ficha técnica →MBR20200CT
✅ Drop-In✓ Em estoque
$0.24 / unidade
Ver ficha técnica →MBR20200CT
✅ Drop-In✓ Em estoque
$0.24 / unidade
Ver ficha técnica →MBR20200CT
✅ Drop-In✓ Em estoque
$0.24 / unidade
Ver ficha técnica →MBR20200CT
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$0.24 / unidade
Ver ficha técnica →MBR20200CT Classificações máximas e características elétricas
| Topologia | Diode Array, 1 Pair, Common Cathode |
| Diode Type | Schottky Barrier Rectifier |
| Repetitive Peak Reverse Voltage (VRRM) | 200 V |
| Average Rectified Forward Current (IF(AV)) | 10 A per leg, 20 A per package (TC = 161 C) |
| Peak Repetitive Forward Current (IFRM) | 20 A per leg (square wave, 20 kHz, TC = 158 C) |
| Non-Repetitive Peak Surge Current (IFSM) | 150 A |
| Peak Repetitive Reverse Current (IRRM) | 1.0 A (2.0 us, 1.0 kHz) |
| Maximum Junction Temperature (TJ) | 175 C |
| Storage Temperature Range (Tstg) | -65 C to +175 C |
| Encapsulamento | TO-220AB (TO-220-3, 3-pin + tab), Through Hole |
| Tipo de montagem | Through Hole |
| Technology | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation |
| Intended Applications | SMPS and converters with outputs up to 48 V |
| Lead Finish | Pb-free, corrosion resistant, readily solderable |
| Molding Compound | UL 94V-0 flammability rated |
| Package Outline Standard | JEDEC TO-220AB |
| Status RoHS | Compliant (Pb-free device) |
Configuração de pinos do MBR20200CT
| Pino 1 | Anode 1 — Anode of diode 1 (rectifier leg A) |
| Pino 2 | Cathode (Common) — Common cathode of both diodes, connected to the metal mounting tab |
| Pino 3 | Anode 2 — Anode of diode 2 (rectifier leg B) |
Aplicações típicas
MBR20200CT é adequado para 6 aplicaçãos: Switch-Mode Power Supply Output Rectification, DC-DC Converter Secondary Rectification, Freewheeling Diode for Inductive Loads, Reverse-Polarity and ORing Protection, Battery Charger Output Rectification, Welding and High-Current Industrial Power Conversion.
Switch-Mode Power Supply Output Rectification
The MBR20200CT is explicitly designed for high-frequency switching power supplies and converters with outputs up to 48 V, per the onsemi and Motorola datasheets. Its dual common-cathode pair directly suits full-wave center-tap secondary rectification: each anode connects to a transformer secondary end, and the common cathode tab drives the output filter. The 200 V VRRM gives roughly 4x margin over a 48 V rail, absorbing leakage-inductance spikes, while the Schottky barrier's zero reverse recovery eliminates turn-off loss at 20 kHz to several-hundred-kHz switching frequencies. Estimated conduction loss at VF about 0.9 V and 10 A per leg is roughly 9 W per package, so mount the tab to a heatsink and keep TC near or below the 161 C rating point for reliable long-term operation.
Recomendado
DC-DC Converter Secondary Rectification
In isolated DC-DC topologies such as push-pull, half-bridge, and forward converters, the MBR20200CT serves as the secondary-side output rectifier or freewheeling diode. The two legs independently rectify alternating half-cycles, and the common-cathode tab doubles as both the electrical output node and the thermal interface to the heatsink. Compared with ultrafast P-N diodes, the Schottky construction removes reverse-recovery charge entirely, cutting switching loss and reducing ringing on the secondary node - which also lowers EMI filter burden. The 200 V rating permits use on 24 V and 48 V bus-derived converters with generous transient margin. Designers should verify repetitive reverse surge behavior and keep junction temperature within the 175 C maximum, accounting for elevated leakage at high temperature.
Recomendado
Freewheeling Diode for Inductive Loads
When switching relays, solenoids, or DC motors with a low-side transistor, the MBR20200CT works as a freewheeling diode that clamps inductive kickback. Its 150 A non-repetitive surge rating (IFSM) absorbs the initial current transfer at turn-off, and the low forward voltage reduces the energy dissipated in the clamp loop, which speeds current decay in the load compared with a standard-recovery diode. The 200 V blocking rating covers 24 V and 48 V industrial rails with ample headroom for ringing. Place the diode directly across the load terminals to keep the clamp loop small; for brushed motors, the dual common-cathode configuration lets one package clamp two switched legs, halving component count on H-bridge low-side switches.
Recomendado
Reverse-Polarity and ORing Protection
The MBR20200CT protects 24 V and 48 V battery-fed equipment against reverse polarity: placed in series with the supply input, it blocks reverse current while its Schottky forward voltage adds minimal drop in normal operation. The dual-diode package also serves as a simple diode-OR element between a main supply and a backup battery - each leg ORs one source into the common-cathode load node. At 10 A per leg, estimated conduction loss near 9 W at full current mandates heatsinking of the tab, and the resulting voltage drop (roughly 0.9 V) should be budgeted in low-margin rails. For circuits where even this drop is unacceptable, consider a MOSFET-based ideal-diode instead; the Schottky solution remains attractive for its simplicity, robustness, and 150 A surge tolerance.
Recomendado
Battery Charger Output Rectification
Lead-acid and lithium charger stages derived from transformer or flybrick secondaries benefit from the MBR20200CT's combination of 20 A capability and 200 V blocking. In center-tap secondary charger designs, the dual common-cathode pair rectifies both half-cycles into the battery bus, and the Schottky low forward drop reduces heat inside enclosed charger housings. The 150 A IFSM rating tolerates the inrush that occurs when connecting a deeply discharged battery, and the 175 C junction limit gives thermal margin in high-ambient automotive or industrial charging environments. Place the rectifier near the output sense point, heatsink the tab, and verify the reverse leakage contribution at maximum junction temperature, since leakage-driven self-heating compounds near thermal limits in sealed enclosures.
Recomendado
Welding and High-Current Industrial Power Conversion
In welding power sources, electroplating supplies, and other high-current industrial converters, paralleled MBR20200CT packages rectify tens to hundreds of amperes. Each package contributes 20 A (10 A per leg), and the 150 A per-device surge rating handles short-circuit and arc-start transients. The through-hole TO-220AB format mounts onto finned extrusion heatsinks with simple screws, easing service and field replacement compared with SMD rectifiers. Because Schottky forward voltage rises with current, paralleling benefits from the natural negative temperature coefficient of VF, which shares current between devices. Estimated per-package dissipation of roughly 9 W at full per-leg current dictates conservative heatsink sizing; monitor tab temperature and derate ambient above 85 C per the manufacturer's thermal curves.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MBR20200CT — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MBR20200CT (onsemi) | MBR20200CT (Diodes Inc) | MBR20200CT (Microchip) | MBR20200CT (Diotec) |
|---|---|---|---|---|---|
| Package | TO-220AB (TO-220-3), through hole | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Taiwan Semiconductor | onsemi | Diodes Incorporated | Microchip Technology | Diotec Semiconductor |
| Reverse Voltage (VRRM) | 200 V | 200 V | 200 V | 200 V | 200 V |
| Forward Current | 20 A total (10 A per leg) | 20 A total (10 A per leg) | 20 A total | 20 A total | 10 A total |
| Configuration | Dual, common cathode | Dual, common cathode | Dual, common cathode | Dual, common cathode | Dual, common cathode |
Principais diferenciais
- Full 20 A total current rating (vs MBR20200CT (Diotec))
- High 200 V blocking for Schottky technology (vs MBR20100CT)
- Standard non-isolated tab for best thermal path (vs MBRF20200CT)
Notas de projeto
Estimated: at VF = 0.90 V (Microchip spec) and 10 A per leg, conduction dissipation is about 9 W per package. The datasheet rating point of 20 A total corresponds to TC = 161 C, which implies a very small margin to the 175 C junction limit - a real heatsink is mandatory. Size the heatsink so that TC stays at or below about 100 C for meaningful derating, and account for the cathode-connected tab by isolating it (mica/sil-pad) if the heatsink is grounded.
Schottky reverse leakage rises steeply with temperature, creating a self-heating feedback loop near the thermal limit. Verify leakage at your maximum junction temperature, not at 25 C. Also note second-source variability: the Diotec MBR20200CT is rated 10 A total while onsemi/Diodes/Microchip rate 20 A total - always check the specific manufacturer's datasheet before substituting in a 20 A design, or the rectifier will be silently overloaded.
Minimize the high-di/dt loop between transformer secondary, the two anode pins, and the output filter capacitors; keep loop area small to limit ringing at the 200 V-rated switching node. Use wide traces or bus bar for 10 A per leg, and fasten the tab with the datasheet torque spec plus thermal grease. Avoid lead-forming stress near the package body; follow the mechanical drawing for bend distance.
Informações de conformidade
onsemi datasheet identifies MBR20200CT as a Pb-free device; Diodes Incorporated datasheet specifies 'green' molding compound with UL 94V-0 flammability rating and notes the MBR(F)20200CT is halogen and antimony-free and qualified to AEC-Q101 (Diodes Inc version). REACH status not stated in provided data.
