MRF21085R3 - 90W 28V W-CDMA RF Power MOSFET | NXP Semiconductors
N.º da peça: MRF21085R3 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118.75 | $11.875,00 |
| 500 | $105 | $52.500,00 |
| 1.000 | $92.5 | $92.500,00 |
MRF21085R3 Visão geral
RF power MOSFETs are specialized lateral metal-oxide-semiconductor field effect transistors optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs, RF power MOSFETs use a lateral geometry on a high-resistivity silicon substrate to minimize parasitic capacitance and maximize breakdown voltage. They sit within a broader product hierarchy of power management semiconductors, which spans linear regulators, DC-DC converters, and discrete RF transistors. The MRF21085R3 family specifically targets the 2.1 GHz UMTS/W-CDMA downlink band, a hypernym class that also includes similar LDMOS devices from competitors.
Key features include 90 W CW output power capability, 13.6 dB typical power gain, 28 V drain supply operation, and high drain efficiency optimized for W-CDMA modulation. The device's lateral construction on a thermally optimized ceramic flange carrier (NI-780H-2L) enables direct mounting to a heatsink or system chassis for thermal dissipation. Internal matching simplifies external PCB design and reduces component count in the final amplifier circuit.
The MRF21085R3 architecture is based on NXP's (formerly Freescale, formerly Motorola Semiconductor) high-voltage lateral MOSFET process. This process delivers high ruggedness into mismatched loads, low memory effects for wideband signals such as W-CDMA, and excellent thermal stability under continuous-wave operation. The device's gold metallization and hermetic ceramic package provide long-term reliability in base-station environments.
Typical applications include W-CDMA base station power amplifiers in the 2110–2170 MHz UMTS band, TDMA and CDMA driver or final-stage amplifiers, and multicarrier power amplifiers for cellular repeaters. The 90 W output capability allows the device to be used as the final stage in macro-cell base stations or as a driver in higher-power amplifier chains.
When designing with the MRF21085R3, ensure proper RF board layout with controlled-impedance transmission lines to the gate and drain. The flange must be properly mounted to a heatsink with adequate thermal compound to maintain junction temperature within safe limits. Bias sequencing and proper matching network design per NXP application notes are critical for achieving rated linearity and efficiency in W-CDMA service.
This page synthesizes distributor stock levels, parametric drop-in alternatives, and practical RF amplifier design notes that complement the official NXP datasheet for engineers evaluating 90 W 2.1 GHz RF MOSFET options.
Alternativas drop-in para MRF21085R3 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF21085
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF21085SR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF21085LSR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF21045LR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF21085R3 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Freescale, formerly Motorola Semiconductor) |
| Product Type | RF Power Field Effect Transistor (Lateral N-Channel MOSFET) |
| Frequency Range | 2.11 GHz to 2.17 GHz |
| Output Power | 90 W (CW) |
| Drain Supply Voltage (VDD) | 28 V |
| Power Gain (typ) | 13.6 dB at 2170 MHz |
| Drain Current (Test Condition) | 1 A |
| Mode of Operation | Enhancement-mode, Class AB typical |
| Transistor Polarity | N-Channel |
| Encapsulamento / Caixa | NI-780H-2L ceramic flange |
| Tipo de montagem | Chassis-mount, flange-mount |
| Target Application | W-CDMA base station, TDMA, CDMA, multicarrier amplifiers |
| ECCN | EAR99 |
Configuração de pinos do MRF21085R3
| Pino 1 | Gate (RF Input) — RF input / gate bias; connects to input matching network and gate DC bias feed |
| Pino 2 | Drain (RF Output) — RF output / drain bias; connects to output matching network and 28 V drain supply |
| Pino 3 | Flange (RF GND / Thermal) — Ceramic flange serves as both RF ground and primary thermal mounting surface to heatsink |
Área de Operação Segura (Drain Voltage vs Drain Current)
Aplicações típicas
MRF21085R3 é adequado para 6 aplicaçãos: W-CDMA Base Station Power Amplifier, TDMA / CDMA Cellular Amplifier, Multicarrier Power Amplifier, Cellular Repeater / Booster Amplifier, Doherty Amplifier Driver Stage, Industrial RF Heating / Plasma Driver.
W-CDMA Base Station Power Amplifier
The MRF21085R3 is purpose-built for the final stage of W-CDMA (Wideband Code Division Multiple Access) base station power amplifiers operating in the 2110–2170 MHz UMTS downlink band. With 90 W CW output power and 13.6 dB typical power gain at 2170 MHz from a 28 V supply, it provides the gain and linearity required to drive macro-cell antenna sectors while maintaining ACLR (Adjacent Channel Leakage Ratio) within 3GPP specifications. Per the manufacturer datasheet, the lateral MOSFET process delivers the low memory effects required for wideband W-CDMA signals. The NI-780H-2L ceramic flange package bolts directly to the heatsink or chassis, enabling reliable thermal dissipation for continuous-duty cellular infrastructure service.
Recomendado
TDMA / CDMA Cellular Amplifier
Beyond W-CDMA, the MRF21085R3 supports TDMA (Time Division Multiple Access) and CDMA (Code Division Multiple Access) amplifier applications in legacy 2G/3G base stations operating in the 2110–2170 MHz UMTS band. Its 90 W output power and 28 V operation align with the standard class-AB bias topology used in these cellular PA designs. According to NXP's datasheet, the device's high breakdown voltage and ruggedness into mismatched loads make it tolerant of antenna VSWR variations encountered in field-deployed cellular repeaters and small-cell infrastructure, where reflected power conditions are common.
Recomendado
Multicarrier Power Amplifier
The MRF21085R3 is well suited for multicarrier power amplifier (MCPA) applications where multiple cellular carriers are combined and amplified simultaneously in a single PA stage. Its 90 W output capability and wideband frequency coverage of 2110–2170 MHz allow a single MRF21085R3 to handle combined multi-carrier W-CDMA signals with appropriate linearization. Per NXP datasheet specifications, the device maintains stable gain and efficiency across the full UMTS downlink band, making it valuable for dense urban base stations where spectrum must be efficiently aggregated. Linear predistortion or feedforward linearizers can be paired with the MRF21085R3 to meet stringent multi-carrier ACLR requirements.
Recomendado
Cellular Repeater / Booster Amplifier
In cellular repeater and signal-booster amplifier applications, the MRF21085R3 delivers the 90 W power level and 2110–2170 MHz coverage needed to extend UMTS coverage in buildings, tunnels, or rural areas. Per the NXP datasheet, the lateral MOSFET process provides the ruggedness required to survive load mismatches at the donor or coverage antenna, which are common in repeater installations where antenna placement is constrained. The NI-780H-2L ceramic flange package simplifies mechanical integration into repeater chassis, while the 28 V operation aligns with standard telecom power supply rails available in cellular infrastructure equipment.
Recomendado
Doherty Amplifier Driver Stage
The MRF21085R3 is commonly deployed as the driver or peaking-amplifier stage in Doherty amplifier configurations targeting high-efficiency W-CDMA base station operation. Doherty amplifiers combine a carrier PA and a peaking PA to maintain high efficiency at backed-off output power levels, which is the typical operating regime for W-CDMA signals with high peak-to-average ratios. The MRF21085R3's 13.6 dB gain and 90 W capability make it suitable for the peaking amplifier role in macro-cell Doherty PA assemblies. According to NXP application notes, the device's low memory effects preserve the linearity required for digitally modulated signals passing through the Doherty combiner.
Recomendado
Industrial RF Heating / Plasma Driver
Although primarily designed for cellular base stations, the MRF21085R3's 90 W CW power rating and 2.1 GHz operating frequency make it applicable to industrial RF heating, plasma generation, and materials processing equipment operating in the 2 GHz ISM-adjacent band. Per the manufacturer datasheet, the lateral MOSFET's high breakdown rating provides margin against load mismatch common in plasma chambers and RF heating applicators, where the load impedance can vary dramatically with the processed material. The chassis-mount NI-780H-2L package is well suited to industrial equipment integration, and the 28 V supply operation simplifies power supply design in factory automation environments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF21085R3 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF21085 | MRF21085SR3 | MRF21085LSR3 | MRF21045LR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same brand | NXP Semiconductors - same brand | NXP Semiconductors - same brand | NXP Semiconductors - same brand |
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Output Power (Pout) | 90 W | 90 W | 90 W | 90 W | 100 W (+11%) |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Power Gain (typ) | 13.6 dB at 2170 MHz | 13.6 dB at 2170 MHz | 13.6 dB at 2170 MHz | 13.6 dB at 2170 MHz | 18.3 dB at 2170 MHz (+35%) |
| Frequency Range | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz |
| Transistor Polarity / Mode | N-Channel Enhancement-mode Lateral MOSFET | N-Channel Enhancement-mode Lateral MOSFET | N-Channel Enhancement-mode Lateral MOSFET | N-Channel Enhancement-mode Lateral MOSFET | N-Channel Enhancement-mode Lateral MOSFET |
| Matching Variant / Test Code | R3 (standard matching) | Base model (no matching code) | SR3 (different input matching) | LSR3 (LS-series matching) | LR3 (45-series, different matching) |
| Target Application | W-CDMA / TDMA / CDMA base station PA | W-CDMA / TDMA / CDMA base station PA | W-CDMA / TDMA / CDMA base station PA | W-CDMA / TDMA / CDMA base station PA | Higher-power W-CDMA base station PA |
Principais diferenciais
- Same-family R3 vs base MRF21085 - matched test conditions (vs MRF21085)
- Higher-power alternative within same package (vs MRF21045LR3)
- LSR3 variant for different input matching (vs MRF21085LSR3)
Notas de projeto
Estimated: At 90 W CW output power and approximately 50% drain efficiency in class-AB service, the MRF21085R3 dissipates on the order of 90 W as heat into its NI-780H-2L flange. Per datasheet guidance, the ceramic flange MUST be bolted to a heatsink or chassis with a continuous thermal compound interface; inadequate mounting will cause junction temperature to exceed safe limits and trigger thermal runaway. Verify the heatsink thermal resistance keeps the flange below the maximum rated mounting temperature under worst-case ambient conditions.
RF board layout around the MRF21085R3 must use controlled-impedance microstrip transmission lines on the gate (input) and drain (output) sides, with characteristic impedance matched to the device's optimum load/source impedance at 2170 MHz. Keep the gate and drain matching networks compact and isolate them to minimize feedback. Per NXP application notes, the ceramic flange ground path must be the shortest possible return to the RF ground plane, and the 28 V drain feed should be RF-decoupled with appropriate chip and bypass capacitors at multiple frequency ranges.
Do not exceed the maximum drain voltage rating on transients, as the MRF21085R3's lateral MOSFET can be damaged by brief over-voltage spikes from the drain supply. Use a regulated 28 V supply with proper in-rush limiting. Always sequence gate bias ON before (or simultaneously with) drain voltage to avoid forward-biasing the gate-source junction. The MRF21085R3 is a legacy W-CDMA part; ensure your RF design accounts for the device's specific test conditions - 'R3' suffix parts may have different matching-network test parameters than base or LS variants even within the same family.
For W-CDMA applications, the MRF21085R3 must operate with sufficient linearity headroom to meet 3GPP ACLR specifications. Per the manufacturer datasheet, memory effects in the lateral MOSFET are low, but bias network design and thermal stability of the quiescent current are critical for maintaining ACLR across temperature. Use a regulated gate bias supply and consider a small pilot-tone linearization loop if multi-carrier operation is required. Drain supply should be well regulated to minimize AM-AM and AM-PM distortion.
Informações de conformidade
ECCN classified as EAR99 per distributor listing. RoHS, REACH, lead-free and halogen-free status not confirmed in the verified web data; engineer should consult the latest NXP material declaration documents. AEC-Q100 is not applicable - this is an RF power transistor, not an automotive-qualified IC.
