MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP
N.º da peça: MRF5S19100HR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $62.55 | $62,55 |
| 10 | $58.4 | $584,00 |
| 25 | $54.2 | $1.355,00 |
| 100 | $49.1 | $4.910,00 |
| 500 | $44 | $22.000,00 |
MRF5S19100HR Visão geral
RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power operation in wireless infrastructure. They serve as the final amplifying stage in Doherty, push-pull, or single-ended PA architectures for cellular base stations, where linearity, gain, and ruggedness under mismatch are critical. The MRF5S19090H and MRF5S19100H family sits in NXP's high-frequency RF power portfolio alongside the MRF6S21100H, MRF6S18100H, and lower-frequency 800-900 MHz MRF5S9080H parts, sharing packaging, biasing concepts, and reference designs. Compared to LDMOS competitor parts, these N-channel enhancement-mode devices offer simplified bias networks and inherent ruggedness into high VSWR loads.
Key features include 22 W average two-carrier N-CDMA output power at 1930-1990 MHz, 13.9 dB power gain under CDMA drive, drain efficiency above 30% in two-carrier operation, and integrated ESD protection on the gate. The device accepts a 28 V nominal drain bias with extended operation to 65 V transient on the drain, and is fully characterized for 2-carrier N-CDMA, WCDMA, and multicarrier amplifier (MCPA) drive conditions. The NI-780 ceramic flange package provides gold metallization for high-temperature storage and operates over a -40C to +200C junction temperature range.
The MRF5S19100HR uses NXP's high-frequency, high breakdown voltage laterally diffused metal-oxide-semiconductor process. Two die are combined inside the NI-780 package for the 100 W peak power rating. Internal gate-source ESD diodes, integrated input matching networks, and gold bond wires yield stable operation up to 1990 MHz with flat gain and acceptable phase variation across the band. The lateral MOSFET architecture produces low memory effects and clean AM-AM/AM-PM curves required for digital predistortion (DPD) linearization.
Typical applications include 1.9-2.0 GHz GSM/EDGE, TDMA, WCDMA, and N-CDMA macro-cell base-station power amplifiers, multicarrier power amplifiers (MCPA) for PCS/PHS/cellular infrastructure, and final-stage driver amplification in higher-power Doherty configurations. The part also sees use in repeater amplifiers, microcell/picocell PA bricks, and laboratory amplifiers covering the full 1900-2000 MHz band.
Designers must observe the input matching network layout guidelines in the NXP datasheet (50 ohm microstrip with source-side bias-T or quater-wavelength transformer) and provide at least 100 mm squared of copper heatsinking beneath the NI-780 flange to keep the junction below 200C. Use of WCDMA evaluation fixtures is recommended for prototyping, and the device must be biased in Class-AB with IDQ around 1000 mA for N-CDMA linear operation.
Alternativas drop-in para MRF5S19100HR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF5S19100HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF5S19100HR5
✅ Drop-In✓ Em estoque
$25.4 / unidade
Ver ficha técnica →MRF5S19100HSR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF5S19090HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF5S19090HR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF5S19100HR Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors |
| Part Family | MRF5S19090 / MRF5S19100 |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | 1930 - 1990 MHz |
| Output Power (Avg) | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | 100 W (typical, single tone) |
| Power Gain | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | 65 V |
| Drain Operating Voltage | 28 V nominal |
| Quiescent Current (IDQ) | 1000 mA |
| Temperatura de junção de operação | -40C to +200C |
| Encapsulamento | NI-780 (ceramic flange) |
| Tipo de montagem | Flange / bolt-down, surface-mount RF |
| Polarity / Channel | N-Channel, dual-die |
| ESD Protection | Gate-source ESD diodes integrated |
| Status RoHS | Compliant (per NXP product page) |
| Storage Temperature | -65C to +200C (per NXP RF Power standard) |
Configuração de pinos do MRF5S19100HR
| Pino 1 | Drain — Drain terminal (D), 28 V nominal bias, accepts up to 65 V transient, internally bonded to dual-die drain pads inside NI-780 cavity |
| Pino 2 | Gate — Gate terminal (G), bias around 2.7-3.5 V for IDQ = 1 A Class-AB operation, internal ESD protection |
| Pino 3 | Source — Source terminal (S), ground reference, must be low-inductance bonded to PCB ground plane |
Área de Operação Segura - MRF5S19100HR
Aplicações típicas
MRF5S19100HR é adequado para 6 aplicaçãos: PCS / WCDMA Base Station Power Amplifier, Doherty PA Peaking-Path Amplifier, Multicarrier Power Amplifier (MCPA) Final Stage, 1.9-2.0 GHz Repeater / Microcell PA Brick, Laboratory / Test-and-Measurement Amplifier, PHS / 1.9 GHz Japanese Cellular Infrastructure.
PCS / WCDMA Base Station Power Amplifier
The MRF5S19100HR is the canonical final-stage device for 1.93-1.99 GHz PCS and WCDMA Node-B power amplifiers, per the NXP datasheet (MRF5S19100H.pdf). Its 22 W average 2-carrier N-CDMA output power, 13.9 dB power gain, and over 30% drain efficiency at 28 V cleanly meet the linearity and link-budget targets of macro-cell base-station RF chains. Paired with a Class-AB bias at IDQ = 1000 mA and digital predistortion (DPD), it holds ACLR low across multicarrier MCPA configurations. The NI-780 ceramic flange bolts directly to the PA heatsink, simplifying thermal design in outdoor remote radio-head units.
Recomendado
Doherty PA Peaking-Path Amplifier
The MRF5S19100HSR3 (and by extension the closely related MRF5S19100HR) is an industry-proven peaking-path transistor in 1.9-2.0 GHz Doherty PA implementations. The lateral MOSFET process yields low AM-AM and AM-PM memory effects, which is the key figure of merit for Doherty alignment and DPD correction, per the NXP datasheet (MRF5S19100H.pdf). Placed as the auxiliary amplifier biased Class-C, the device turns on only at the high-power peaks of the WCDMA envelope, materially improving efficiency at 6-9 dB back-off. The NI-780 package geometry matches existing Doherty combiner PCBs, avoiding layout rework during PA retrofit.
Recomendado
Multicarrier Power Amplifier (MCPA) Final Stage
MCPAs for PCS and cellular-repeater infrastructure aggregate multiple carriers into a single broadband PA chain, and the MRF5S19100HR is characterized by NXP for exactly this use case. Its 22 W average output at 1930-1990 MHz and 30%+ drain efficiency deliver the headroom needed for 4-carrier N-CDMA or 2-carrier WCDMA combinations, while the lateral MOSFET architecture keeps intermodulation distortion between carriers under control. The NI-780 ceramic flange supports continuous operation at full CW power when properly heatsunk - critical for repeater hubs that never power-cycle. Designers should pair the MRF5S19100HR with circulator protection for ruggedness into antenna mismatches.
Recomendado
1.9-2.0 GHz Repeater / Microcell PA Brick
Distributed antenna systems and outdoor microcells in the PCS band use compact, rugged 1.93-1.99 GHz PAs that must survive antenna mismatch and outdoor temperature swings. The MRF5S19100HR operates from -40C to +200C junction, accepts up to 65 V drain transient, and exhibits high VSWR ruggedness thanks to its enhancement-mode lateral structure. With output power around 22 W average and small-form NI-780 flange mounting, it bolts to a single-stage PA heatsink inside sealed radio-head enclosures. The part's gate ESD diodes simplify the BOM versus parts requiring external TVS protection.
Recomendado
Laboratory / Test-and-Measurement Amplifier
Test benches and EMC chamber instrumentation covering 1.9-2.0 GHz rely on broadband RF amplifiers that combine flat gain, good linearity, and high CW power headroom. The MRF5S19100HR's 100 W PEP capability and 13.9 dB small-signal gain make it well suited as a T&M final-stage driver behind a CW source or pulsed test system. Its drain efficiency above 30% reduces thermal load during long stress-test sweeps. Designers benefit from NXP's datasheet evaluation fixture layouts, which double as a starting reference for custom lab amplifier PCBs operating in the 1930-1990 MHz PCS band.
Recomendado
PHS / 1.9 GHz Japanese Cellular Infrastructure
The PHS (Personal Handy-phone System) and earlier Japanese 1.9 GHz cellular standards share the 1900-2000 MHz spectrum and require 22 W-class base-station finals - an exact match for the MRF5S19100HR. As NXP's datasheet characterizes the device from 1930-1990 MHz with 22 W 2-carrier N-CDMA output, it is functionally a drop-fit for legacy PHS hubs, microcell infrastructure, and broadcast translators. Older equipment upgrade cycles often require this part as a direct substitute for early Freescale/Freescale-derived MRF5S19090H installations, with the NI-780 flange enabling reuse of existing heatsink assemblies.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF5S19100HR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF5S19100HR3 | MRF5S19100HR5 | MRF5S19100HSR3 | MRF5S19090HR3 | MRF5S19090HR5 |
|---|---|---|---|---|---|---|
| Package | NI-780 (ceramic flange) | NI-780 (ceramic flange) | NI-780 (ceramic flange) | NI-780 (ceramic flange) | NI-780 (ceramic flange) | NI-780 (ceramic flange) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930 - 1990 MHz | 1930 - 1990 MHz | 1930 - 1990 MHz | 1930 - 1990 MHz | 1930 - 1990 MHz | 1930 - 1990 MHz |
| Output Power (Avg, 2-carrier N-CDMA) | 22 W | 22 W | 22 W | 22 W | 18 W | 18 W |
| Output Power (PEP, single-tone) | 100 W (typical) | 100 W (typical) | 100 W (typical) | 100 W (typical) | 90 W (typical) | 90 W (typical) |
| Power Gain (Pout = 22 W) | 13.9 dB | 13.9 dB | 13.9 dB | 13.9 dB | ~13.0 dB | ~13.0 dB |
| Drain Operating Voltage | 28 V nominal | 28 V nominal | 28 V nominal | 28 V nominal | 28 V nominal | 28 V nominal |
| Drain-Source Voltage (Max) | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Quiescent Current (IDQ) | 1000 mA | 1000 mA | 1000 mA | 1000 mA | 900 mA | 900 mA |
| Operating Junction Temperature | -40C to +200C | -40C to +200C | -40C to +200C | -40C to +200C | -40C to +200C | -40C to +200C |
Principais diferenciais
- Doherty-Optimized Variant Available in Same Package (vs MRF5S19100HSR3)
- NXP Authorized Source vs Third-Party Broker Stock (vs Rochester Electronics LLC (per DigiKey Marketplace listing))
- 22 W Average N-CDMA vs 18 W for 90 W Sibling (vs MRF5S19090HR3 (18 W avg / 90 W PEP))
- Volume Reel Availability (HR3 / HR5) (vs Bulk MRF5S19100HR (tray))
Notas de projeto
The NI-780 ceramic flange must be mounted on a heatsink with thermal compound applied, and the package leads soldered into a 50 ohm microstrip transmission line on the PCB substrate (typically RO4350B or RO4003C). Source-lead grounding should use multiple via-stitches to the bottom ground plane, kept as short as physically possible to minimize common-source lead inductance - NXP's reference designs use 4-6 vias in parallel. The drain bias feed should be a quarter-wave transformer or bias-T with a 1000 pF decoupling capacitor within 5 mm of the lead. Input matching networks typically use chip-and-wire construction; copper thickness of 1 oz is sufficient at 2 GHz.
Estimated steady-state thermal dissipation at full CW drive (100 W PEP into 100% DC load) is approximately 240 W minus radiated RF, yielding a junction-to-flange thermal resistance (RthJF) budget of roughly 0.15 C/W if the flange is held at 70C. NXP characterizes the part with Tj max = 200C; practical design should hold Tj below 175C (estimated) to retain long-term MTTF. A 2-mm-thick aluminum heatsink of at least 100 cm squared is the minimum for free-air cooling at full duty cycle; active heatsinking with forced-air cooling is required for MCPA or CW lab-amplifier service. Estimating junction rise: 100 W dissipation * 0.15 C/W (estimated) = 15 C rise at the flange, which suggests a flat heatsink suffices with at least 200 CFM airflow.
Do not operate the MRF5S19100HR below 1930 MHz or above 1990 MHz - out-of-band gain peaking can cause spurious oscillation. The drain bias must include a soft-start circuit to avoid inrush current that can crack the source-bond wires. Quiescent bias point must be Class-AB at IDQ = 1000 mA; lower bias reduces linearity (worsens ACLR) while higher bias reduces efficiency. Always include an isolator or circulator at the output to protect the device from antenna VSWR transients - the part is rugged but not invulnerable. Replace the gate ESD diodes with TVS protection on older Freescale-revision boards per NXP PCN documentation.
Drain-to-gate feedback must be minimized with a 50-ohm coplanar waveguide (CPW) or stripline layout; isolate gate and drain traces by at least 5 mm (estimated) to prevent oscillation. Place all RF bypass capacitors (typically 1000 pF + 10 nF + 100 pF) within 3 mm of the active leads to suppress parametric resonances in the VHF range. The PCB-side copper pad for the gate lead must be kept narrow (matched to 50 ohm) and free of thermal mass that would slow bias feedback. A dry-etched copper-tape shield over the input matching network reduces pickup of the strong output signal into the gate, which can drive spurious low-frequency oscillation.
Informações de conformidade
RoHS and REACH compliance per NXP RF Power product line. AEC-Q100 is not applicable - this part is not qualified for automotive use. Lead-free Ni-plated flange finish. Halogen-free status not explicitly stated in the provided data - see NXP materials declaration for confirmation.
