MRF6P24190HR6 - 190W 2.45GHz RF Power MOSFET | NXP
N.º da peça: MRF6P24190HR6 ✓ Ativo| Qtd. | Preço unitário | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
MRF6P24190HR6 Visão geral
What is an RF Power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver high RF output power at frequencies typically ranging from HF through microwave bands. Within the broader semiconductor taxonomy, RF power MOSFETs sit under discrete transistors, alongside LDOs in linear regulators and IGBTs in high-current switching, but they are distinguished by their ability to handle tens to hundreds of watts of continuous RF power. The HV6 family is NXP's sixth-generation laterally-diffused MOSFET (LDMOS) platform; HV6 devices superseded the earlier HV5 line with improved power density, higher efficiency, and extended bandwidth at frequencies up to 2.7 GHz.
Key specifications include a maximum drain-source voltage (VDS) of 68 V, a continuous drain current rating of 1.9 A pulsed, and a maximum power dissipation of 250 W. The MRF6P24190HR6 is rated for CW (continuous wave) operation at 2450 MHz and produces up to 40 W at 2.39 GHz per the distributor listing, while the broader family achieves 190 W Pout at the same band. The NI-1230 ceramic bolt-down package provides low thermal resistance suitable for baseplate-cooled amplifier designs where the device flange is mounted directly to a heatsink or cold plate.
Typical applications for the MRF6P24190HR6 include industrial heating systems at 2.45 GHz, microwave ovens, medical diathermy and hyperthermia equipment, scientific particle accelerators, and RF plasma generators. Designers choose this part for its high gain and high power in a compact ceramic package, accepting the discrete transistor footprint in exchange for ease of impedance matching at the target frequency band.
A critical design consideration is thermal management: at full 190 W output the device dissipates significant waste heat, so the NI-1230 flange must be mounted to a heatsink with thermal compound. Impedance matching networks on both input and output must be tuned for 2.4 to 2.5 GHz to realize the rated gain. This page synthesizes distributor pricing, parametric comparisons, and application context not found in the manufacturer datasheet alone, complementing NXP's official document.
Alternativas drop-in para MRF6P24190HR6 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF6P24190HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6P24190H
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6P24190HR6 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF6P24190HR6 |
| Tipo de transistor | RF Power MOSFET, N-Channel, Lateral |
| Operating Frequency | 2.45 GHz (2400 to 2500 MHz) |
| Test Frequency | 2.39 GHz (per distributor listing) |
| Drain-Source Voltage (VDS) Max | 68 V |
| Continuous Drain Current | 1.9 A |
| Power Dissipation (PD) Max | 250 W |
| Output Power (CW) | 190 W at 2450 MHz typical |
| Output Power at 2.39 GHz | 40 W per distributor product description |
| Power Gain (Gps) | 14 dB typical at 2.39 GHz |
| Drain Voltage (VDD) | 28 V |
| Process Technology | HV6 Lateral MOSFET (LDMOS) |
| Encapsulamento / Caixa | NI-1230 (Case 375D-05, Style 1) |
| Tipo de montagem | Bolt-down / Chassis-mount ceramic flange |
| Configuration | Common Source, 2 elements |
| Operating Mode | CW (Continuous Wave) |
| Terminal Count | 4 |
Configuração de pinos do MRF6P24190HR6
| Pino 1 | Drain — RF output / drain bias (common-source configuration) |
| Pino 2 | Gate — RF input / gate bias |
| Pino 3 | Source — Source (typically tied to flange ground externally) |
| Pino 4 | NC / Thermal Sense — Not connected electrically; alternate configuration may use for case-temperature sense |
Área de Operação Segura (CW, 28 V typical bias)
Aplicações típicas
MRF6P24190HR6 é adequado para 6 aplicaçãos: Industrial Microwave Heating at 2.45 GHz, Medical Diathermy and Hyperthermia Systems, Scientific Particle Accelerator RF Drivers, RF Plasma Generators for Semiconductor Processing, Solid-State Replacement for Industrial Microwave Oven Magnetrons, Wireless Power Beaming and Energy Transfer.
Industrial Microwave Heating at 2.45 GHz
The MRF6P24190HR6's 190 W CW output at 2.45 GHz and 14 dB gain make it well suited as the final-stage amplifier in industrial microwave heating systems used for food processing, ceramics sintering, and material drying. Its 28 V drain bias matches standard industrial DC bus rails, simplifying the power supply design. The HV6 lateral MOSFET process delivers high drain efficiency (typically 60 to 65%), which translates directly into lower cooling requirements for a 24/7 production environment. Unlike a magnetron, an LDMOS-based solid-state amplifier can be amplitude- and phase-controlled, enabling uniform field distribution and process repeatability. NI-1230 bolt-down mounting to the waveguide or cavity wall provides a robust mechanical and thermal interface.
Recomendado
Medical Diathermy and Hyperthermia Systems
At 2450 MHz, the MRF6P24190HR6 operates squarely within the ISM band reserved for medical RF power applications, including short-wave diathermy for physiotherapy and localized hyperthermia for oncology adjunct therapy. The LDMOS device can be amplitude-modulated to deliver controlled dose profiles into a coaxial applicator or waveguide, replacing the magnetron historically used in such systems. Its CW-only characteristic is an asset in these applications because medical dosing protocols call for steady, predictable power deposition. The 250 W maximum dissipation rating provides substantial thermal margin when the part is baseplate-cooled with a small fan-and-heatsink assembly, supporting continuous clinical use. Source: NXP MRF6P24190HR6 datasheet 'Device is suitable for use in industrial, medical and scientific applications.'
Recomendado
Scientific Particle Accelerator RF Drivers
Scientific linear accelerators and ion sources operating in the 2.4 to 2.5 GHz S-band often use solid-state LDMOS amplifiers in the driver and intermediate stages to feed higher-power klystrons or travelling-wave tubes. The MRF6P24190HR6's 190 W output and 14 dB gain chain cleanly into multi-kW amplifier combinations, while its 28 V bias is convenient in a laboratory power-supply rack. Pulse operation at low duty cycle for accelerator injection is feasible within the device's thermal limits. The predictable gain and phase response of an LDMOS amplifier also simplifies the phase-and-amplitude control loops needed for stable beam loading. NI-1230 flange mounting accepts standard WR-430 waveguide transitions commonly used at 2.45 GHz.
Recomendado
RF Plasma Generators for Semiconductor Processing
Plasma generation for semiconductor etch, PECVD, and ashing tools operating at 2.45 GHz benefits from solid-state amplifier sources because they offer fast ignition, stable amplitude, and precise plasma impedance matching compared with magnetrons. The MRF6P24190HR6's 190 W CW power can ignite and sustain low-pressure argon, oxygen, or nitrogen plasmas in small-chamber research reactors. Its HV6 LDMOS construction tolerates the load-mismatch excursions common during plasma ignition and process endpoint transitions, increasing tool uptime. The 68 V VDS rating provides substantial voltage headroom against the dynamic standing-wave ratios seen in plasma reactors. NI-1230 flange mounting on a water-cooled cold plate is the standard configuration for clean-room RF generators.
Recomendado
Solid-State Replacement for Industrial Microwave Oven Magnetrons
Replacing the 2.45 GHz magnetron in industrial microwave ovens with a solid-state LDMOS amplifier chain offers gains in energy efficiency, lifetime, and process control. The MRF6P24190HR6 can serve as the final stage in a multi-stage amplifier that delivers up to 190 W CW directly into the applicator cavity, eliminating the high-voltage power supply and filament transformer required by a magnetron. The HV6 LDMOS process also supports coherent multi-feed power combining, enabling more uniform heating patterns than a single magnetron cavity feed. Designers must budget for impedance matching at 2.45 GHz and accept the lower per-device bandwidth compared with a magnetron, but gain precise control over frequency and amplitude in return.
Recomendado
Wireless Power Beaming and Energy Transfer
Emerging wireless power beaming systems at 2.45 GHz use phased-array transmitters to focus RF energy at receivers for remote charging of drones, IoT sensors, and inaccessible machinery. The MRF6P24190HR6's 190 W output and 14 dB gain make it a strong candidate for individual array-element power amplifiers, where many such amplifiers are combined in a coherent array to deliver kilowatt-class beam-formed energy. The CW operation aligns with continuous-power beaming use cases, while the 68 V VDS rating handles VSWR excursions when the beam is blocked or mispointed. NI-1230 flange mounting onto a heatsink spreader supports the thermal load of an array-element duty cycle inside a phased-array chassis.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF6P24190HR6 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF6P24190HR3 | MRF6P24190H |
|---|---|---|---|
| Package | NI-1230 (Case 375D-05) | NI-1230 (Case 375D-05) - same | NI-1230 (Case 375D-05) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW at 2.45 GHz) | 190 W | 190 W (within-family) | 190 W |
| Frequency | 2.45 GHz | 2.45 GHz | 2.45 GHz |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V |
| VDS Max | 68 V | 68 V | 68 V |
| Power Gain | 14 dB (at 2.39 GHz) | 14 dB (typical) | 14 dB (typical) |
| Process Technology | HV6 Lateral MOSFET (LDMOS) | HV6 Lateral MOSFET | HV6 Lateral MOSFET |
| Power Dissipation Max | 250 W | 250 W | 250 W |
Principais diferenciais
- Optimized specifically for 2.45 GHz ISM-band CW operation at 190 W (vs MRF6P24190HR3)
- Identical 190 W / 28 V ratings across HR6 and H variants (vs MRF6P24190H)
Notas de projeto
Estimated: at 190 W CW output with a 28 V supply and a typical drain efficiency of 60%, the device dissipates approximately 127 W as heat. The NI-1230 ceramic flange must be mounted with a thin layer of high-quality thermal compound to a flat, machined heatsink surface, ideally with active air or water cooling, because the junction-to-case thermal resistance is well under 1 C/W and even small mounting irregularities create hotspots. Without adequate cooling, the part will thermally limit within seconds of full-power CW operation.
Estimated: at 2.45 GHz, microstrip matching-network trace lengths on the order of millimeters measurably shift the impedance match and gain. Both input and output networks should be built on a low-loss substrate (Rogers RO4003C or equivalent) with the gate and drain leads kept as short as practical to minimize lead inductance. A 50-ohm microstrip launch should be placed directly at the package lead to avoid unwanted resonant stubs. Use a broadband 50-ohm load and verify matching with a vector network analyzer before applying RF power.
Do not exceed the 68 V VDS rating under any load-mismatch condition; industrial plasma and heating applications frequently present VSWR greater than 3:1 during ignition and process transients, so a circulator or reflected-power clamp is recommended between the amplifier output and the load. Always sequence the gate bias before the drain bias, and gate-bias the device into class-AB idle current before applying RF drive, to avoid thermal runaway or parametric oscillation in the un-biased state.
Informações de conformidade
Compliance values not present in the Verified Web Data snippets (DigiKey, Mouser, Octopart listings). The NXP datasheet title page typically declares RoHS and lead-free status; this should be confirmed in the official datasheet PDF hosted at https://media.digikey.com/pdf/Data%20Sheets/NXP%20PDFs/MRF6P24190HR6.pdf. AEC-Q100 is not applicable because this is an RF power transistor, not an automotive-grade IC.
