MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors
N.º da peça: MRF6S18140HR5 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $87.5 | $875,00 |
| 100 | $79.2 | $7.920,00 |
| 250 | $72 | $18.000,00 |
| 500 | $65 | $32.500,00 |
MRF6S18140HR5 Visão geral
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized discrete semiconductor device built on a silicon MOSFET process and tailored for high-frequency, high-power RF amplification. LDMOS transistors belong to the broader MOSFET family within discrete semiconductors and dominate the cellular base-station power amplifier (PA) market due to their excellent power density, high breakdown voltage, and ability to deliver watts of RF power at GHz frequencies with good linearity. The NI-880H-2L ceramic package provides a low-thermal-resistance flange-mount footprint that bolts directly to a heatsink, which is essential at the 29 W continuous power level this device is designed to deliver.
Key features of the MRF6S18140HR5 include 29 W P1dB-class output power at 1.88 GHz, 16 dB typical power gain at the test condition, 68 V maximum drain voltage rating, and rugged Class AB operation suitable for W-CDMA, TDMA, CDMA, and multicarrier amplifier topologies. The internal input matching network simplifies PCB-level design by absorbing the fine-grained impedance transformation that LDMOS die normally require, while the flanged ceramic package provides a stable low-inductance ground path for high-frequency operation.
From an application standpoint, the MRF6S18140HR5 is intended for the final stage of 1.8 GHz DCS-1800 / PCS-1900 base-station PAs, repeaters, and high-power driver stages for macro-cell transmitters. Its multicarrier capability makes it well suited for modern OFDM-based radios where multiple modulated carriers share a single PA stage and where linearity and thermal stability under high PAR (peak-to-average ratio) signals are required.
When designing with this part, engineers must use adequate heatsinking (the flange-mount ceramic package is designed to be bolted to a heatsink) and ensure the drain bias network is properly RF-decoupled. Class AB biasing at the suggested 1.2 A quiescent current provides the optimum trade-off between linearity and efficiency for digital modulation schemes. RoHS compliance should be verified per the latest NXP product declaration.
This page synthesizes distributor stock, parametric comparison data, and practical RF amplifier design notes - information not consolidated on any single manufacturer or distributor page - to accelerate the design-in of this part in modern wireless infrastructure equipment.
Alternativas drop-in para MRF6S18140HR5 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRF6S18140HR5 (mesmo formato e footprint) — diferindo em Manufacturer, Mounting Type, Transistor Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF6S18140HS
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6S18140HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6S18125N
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6S20010N
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6S18140HR5 Classificações máximas e características elétricas
| Tipo de transistor | LDMOS (RF Power MOSFET) |
| Technology | LDMOS, N-Channel |
| Frequency | 1.88 GHz (test frequency) |
| Test Voltage | 28 V |
| Test Current | 1.2 A |
| Power Gain | 16 dB (typical at test condition) |
| Output Power (P1dB) | 29 W |
| Voltage - Rated (Vdss max) | 68 V |
| Current Rating (leakage) | 10 uA |
| Encapsulamento | NI-880H-2L (ceramic flange mount) |
| Tipo de montagem | Chassis / Flange Mount |
| Configuration | Single, internally input-matched |
| Application | N-CDMA, TDMA, CDMA, multicarrier amplifier base-station PA |
| Operating Class | Class AB |
| Lead Free Status | Lead Free / RoHS Compliant (per distributor listing) |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
Configuração de pinos do MRF6S18140HR5
| Pino 1 | Gate (RF Input) — RF input from driver stage; internally matched to ~50 ohm nominal |
| Pino 2 | Drain (RF Output) — RF output to harmonic filter / antenna path; DC bias feed via drain network |
| Pino Flange | Source / Thermal — Source (ground) and thermal path; mount directly to heatsink with thermal compound |
Área de Operação Segura (DC, continuous)
Aplicações típicas
MRF6S18140HR5 é adequado para 6 aplicaçãos: 1.8 GHz DCS-1800 Base-Station Final PA, PCS-1900 / N-CDMA Macro-Cell PA, Multicarrier Power Amplifier for Repeaters, High-Power Driver Stage for Macro-Cell PAs, Industrial RF Heating / Drying at 1.8 GHz, Public-Safety / Private LTE Repeater PA.
1.8 GHz DCS-1800 Base-Station Final PA
The MRF6S18140HR5's 29 W P1dB at 1.88 GHz with 16 dB gain from a 28 V rail is dimensioned exactly for the final PA stage of a DCS-1800 macro-cell base station. The internally input-matched network absorbs the fine-grained gate impedance transformation so the matching external to the part is reduced to a simple drain harmonic filter, simplifying the RF layout. Because the device is specified for N-CDMA and multicarrier amplifier use, it handles the high PAR of multicarrier GSM/EDGE and early W-CDMA signals at 1.8 GHz with adequate linearity margin. The flange-mount NI-880H-2L package bolts directly to the PA heatsink, providing the low thermal resistance (per datasheet) needed to dissipate the ~40 W DC input at full RF drive without exceeding the silicon junction limit. Compared with a discrete MOSFET, the integrated matching on input cuts PCB area by roughly 30% and removes one iteration of gate-matching tuning.
Recomendado
PCS-1900 / N-CDMA Macro-Cell PA
For N-CDMA macro-cell base stations in the PCS-1900 band, the MRF6S18140HR5 delivers the 29 W linear output power required to meet the cell-edge EIRP specification while operating from a standard -48 V telecom rail stepped up to 28 V. Its 16 dB gain at 1.88 GHz allows a single-stage final PA design when driven by a 1-2 W driver LDMOS, eliminating an intermediate gain stage and reducing BOM cost. The 68 V Vdss rating provides robust margin against drain transient overshoots that occur when the antenna VSWR momentarily rises (a common event at cell sites), protecting the device from avalanche breakdown. NXP's datasheet application circuit uses a simple drain harmonic filter and a gate bias sequencer; this architecture has been volume-deployed in macro-cell PA line-replaceable modules for over a decade, demonstrating field-proven reliability at the 29 W continuous power level.
Recomendado
Multicarrier Power Amplifier for Repeaters
On-frequency band-selective repeaters and tower-top amplifiers often require a single PA stage that handles multiple modulated carriers simultaneously while preserving linearity; the MRF6S18140HR5 is rated for multicarrier amplifier applications and is therefore well suited to this role. Its 16 dB gain at 1.2 A Idq Class AB bias gives the linearity margin required when 4-8 carriers are summed into the PA input, where the third-order intermodulation products must remain inside the operator's spurious-emission mask. The 29 W saturated output corresponds to roughly 10-12 W linear output per carrier in a four-carrier composite, which matches typical repeater downlink power budgets. The flange-mount ceramic package is mechanically compatible with the cast-aluminum repeater housing used in outdoor units, simplifying thermal integration. The internally matched input reduces the repeater PCB to a two-layer board with a single drain harmonic network.
Recomendado
High-Power Driver Stage for Macro-Cell PAs
In cascaded macro-cell PA architectures the MRF6S18140HR5 can also serve as a high-power driver for a final-stage vacuum-tube or higher-power LDMOS PA, taking advantage of its 29 W output and 16 dB gain to bridge the gap between a low-power MMIC driver and the final stage. Operating at 1.88 GHz with 28 V bias it can over-drive the next stage into saturation while still remaining inside its own SOA, providing headroom for AGC loops. The 68 V Vdss rating means the device tolerates the inductive kickback that occurs when the driven final stage draws pulsed current during modulation peaks. Because the part shares its footprint with other NI-880 family LDMOS, a single heatsink and bias-rail design can be reused across the driver and final-stage slots, simplifying the PA module BOM and the tuning procedure at production.
Recomendado
Industrial RF Heating / Drying at 1.8 GHz
Outside the carrier infrastructure market, the MRF6S18140HR5's 29 W CW rating at 1.88 GHz makes it usable in industrial RF heating and drying applications where ISM-adjacent frequencies and continuous-duty operation are required. The flange-mount ceramic package is mechanically compatible with standard industrial RF-heating amplifier housings, and the Class AB bias point at 1.2 A Idq provides the best trade-off between efficiency and power delivery for matched-load heating of dielectric materials. Compared with a magnetron-based heater, the LDMOS solid-state topology offers much finer output-power control via the gate bias, enabling closed-loop temperature regulation. The 68 V Vdss rating gives margin against the VSWR swings that occur when the load (wet material) changes impedance during the drying cycle, a common failure mode for solid-state RF heaters. NXP's published derating curves should be followed for continuous-duty industrial use.
Recomendado
Public-Safety / Private LTE Repeater PA
Private LTE, public-safety broadband (e.g., FirstNet-style), and tactical-radio repeaters operating in Band 3 (around 1.8 GHz) can use the MRF6S18140HR5 as the final PA stage where 20-30 W linear output is required. The 28 V test bias aligns with standard 48 V-to-28 V telecom DC-DC converters, simplifying the power architecture. The part's multicarrier amplifier rating is directly applicable to OFDM-based private-LTE waveforms, where dozens of subcarriers are aggregated into a single PA stage. With proper heatsinking the device delivers its 29 W CW rating continuously, which meets the duty-cycle requirements of always-on public-safety repeaters. The flange-mount package and integrated input matching shorten the RF mechanical design cycle, an important factor for the short design windows typical of private-network deployments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF6S18140HR5 — comparação, orientação de projeto e informações de conformidade.
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Comparação com alternativas
| Parâmetro | Este produto | MRF6S18140HS | MRF6S18140HR3 | MRF6S18125N |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880H-2L (ceramic flange mount) | NI-880H (ceramic flange) | NI-880H-2L (same) | NI-880 family |
| Output Power (P1dB) | 29 W | 29 W | 29 W | ~25 W |
| Frequency | 1.88 GHz | 1.88 GHz | 1.88 GHz | 1.88 GHz |
| Test Voltage | 28 V | 28 V | 28 V | 28 V |
| Vdss Max | 68 V | 68 V | 68 V | 68 V |
| Lead Free / RoHS | Yes | Yes | Yes | Yes |
Principais diferenciais
- Highest 1.88 GHz Pout in NXP's NI-880 29 W family at this specific test bias (vs MRF6S18125N)
- Internally input-matched, simplifying PCB (vs Generic LDMOS die (e.g., discrete die on carrier))
- 68 V Vdss rating for telecom-grade surge margin (vs Lower-voltage (e.g., 50 V Vdss) competitor LDMOS parts)
Notas de projeto
The NI-880H-2L ceramic flange MUST be bolted to a heatsink with thermal compound (e.g., kerathermal or equivalent) before power is applied. At 29 W CW RF output and ~50% efficiency, the device dissipates roughly 25-30 W into the flange; without a heatsink sized for <0.5 C/W thermal resistance, the silicon junction will exceed its 200 C rating within seconds. Estimate: junction-to-flange theta is ~0.3 C/W per NXP family datasheets, so flange-to-ambient must add no more than 1.5 C/W (heatsink + airflow) to keep Tj below 150 C at 25 C ambient.
Use the NXP-recommended PCB footprint from the NI-880H-2L mechanical outline. The input and output microstrip traces should be 50 ohm on the chosen substrate (e.g., Rogers RO4003 for low loss at 1.88 GHz) and must NOT run under the package flange. Place drain-bias decoupling (100 pF + 10 nF + 10 uF) within 5 mm of the drain lead; gate-bias decoupling (same network) within 5 mm of the gate lead. Any gate-source instability (typically 200-500 MHz) is a symptom of inadequate gate-bias decoupling and must be resolved before attempting to tune the RF match.
Keep the gate and drain microstrip lines physically separated by at least 5 mm (10x substrate thickness) to prevent output-to-input coupling that would otherwise degrade gain and stability. The harmonic filter on the drain side should be a 2-section low-pass topology (cutoff ~2.5 GHz) to meet -45 dBc harmonic spurious emissions. Estimated: at 29 W CW, the second-harmonic content without filtering can reach -25 dBc; the LPF adds at least 20 dB suppression.
Do NOT exceed 68 V on the drain - the Vdss rating is absolute. Do NOT apply drain voltage before gate bias is established, or the device may draw uncontrolled current and suffer thermal runaway. Always sequence: gate voltage ON (with Vgg < 0 V to keep device OFF) -> ramp Vgg to Idq = 1.2 A -> then ramp Vdd to 28 V. For power-down, reverse the order. Failing to sequence is the single most common cause of LDMOS PA failure in the lab.
For W-CDMA / multicarrier operation, bias the device at the exact 1.2 A Idq Class AB point and verify linearity with a two-tone or 4-carrier OFDM stimulus before declaring the PA compliant. Estimated: moving Idq from 1.2 A to 0.8 A reduces IM3 by ~3 dB but improves efficiency by ~5 percentage points; moving Idq to 1.6 A improves IM3 by ~2 dB at the cost of efficiency. Choose Idq based on the dominant figure of merit for the target standard.
Informações de conformidade
RoHS compliant and lead-free per distributor listing (DigiKey NXP USA Inc. listing, as of 2026-10-16). REACH, halogen-free, and conflict-minerals declarations should be requested from NXP directly. AEC-Q100 is not applicable - this is a discrete RF power transistor, not an automotive-grade IC.
