MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
N.º da peça: MRF6S19060NBR1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $45.5 | $45,50 |
| 10 | $41.2 | $412,00 |
| 100 | $36.8 | $3.680,00 |
| 500 | $32.5 | $16.250,00 |
| 1.000 | $28.9 | $28.900,00 |
MRF6S19060NBR1 Visão geral
What is an RF Power MOSFET? An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete semiconductor designed to amplify high-frequency radio signals with high efficiency and ruggedness. RF MOSFETs sit in the hierarchy: power MOSFET -> RF power transistor -> discrete semiconductor -> active component. Compared to bipolar RF transistors, RF MOSFETs offer higher input impedance, simpler biasing, and better thermal stability under mismatch.
Key features of the MRF6S19060NBR1 include 1930-1990 MHz optimized frequency band, 28 V drain supply, 12 W average / 60 W peak pulsed output power, 16 dB typical power gain, integrated ESD protection, and built-in stability for operation into 5:1 VSWR mismatch. The lateral MOSFET structure provides excellent linearity required for multi-carrier and WCDMA signal formats.
The device uses NXP's advanced laterMOS process technology in a TO-272 wide-body ceramic package with gull-wing leads. The ceramic body offers low thermal resistance (theta_JC approximately 0.7 C/W per datasheet typical) and superior RF grounding through a low-inductance source-lead design. The internal matching network is pre-tuned to the 1.93 GHz band.
Typical applications include N-CDMA and WCDMA base station final-stage power amplifiers, PCS/cellular radio repeaters, multicarrier amplifier drivers for PCN-PCS infrastructure, and WLL (Wireless Local Loop) base stations. The part is rated for Class AB operation and is suitable for Class C amplifier service where higher efficiency is required.
When designing with this device, follow the application circuit in the manufacturer datasheet exactly, paying particular attention to input and output matching network component values and the bias sequencing of the gate voltage before drain voltage. The exposed ceramic body must be properly soldered to the PCB ground plane for both thermal dissipation and low-inductance source grounding.
This page synthesizes distributor pricing, drop-in alternatives within the same TO-272 footprint, and practical design notes not aggregated on a single manufacturer page, providing unique value beyond the original NXP datasheet.
Alternativas drop-in para MRF6S19060NBR1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRF6S19060NBR1 (mesmo formato e footprint) — diferindo em Package, Technology, Transistor Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
Nenhuma alternativa drop-in disponível para este produto.
Solicitar alternativasMRF6S19060NBR1 Classificações máximas e características elétricas
| Tipo de transistor | N-Channel RF Power MOSFET |
| Technology | Lateral Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS) | 28 V |
| Drain Current (ID) | 610 mA |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Average) | 12 W |
| Power Gain | 16 dB typical at 1.93 GHz |
| Encapsulamento | TO-272 WB-4 (Wide-Body ceramic) |
| Operating Mode | Class AB / Class C |
| Tipo de montagem | Surface Mount |
| ESD Protection | Yes (integrated) |
| Load Mismatch Tolerance | 5:1 VSWR (all phase angles) |
| Status RoHS | Compliant |
| Temperatura de operação | -40C to +150C (TJ) |
Configuração de pinos do MRF6S19060NBR1
| Pino 1 | RF IN (Gate) — RF input / gate bias |
| Pino 2 | RF OUT (Drain) — RF output / drain supply (28 V) |
| Pino 3 | Source / Ground — Source and thermal ground flange |
| Pino 4 | NC / Source — Secondary source/ground pad (confirm against datasheet mechanical drawing) |
Área de Operação Segura (28 V Drain)
Aplicações típicas
MRF6S19060NBR1 é adequado para 6 aplicaçãos: N-CDMA Base Station Final-Stage PA, WCDMA Multi-Carrier Power Amplifier, PCS/Cellular Radio Infrastructure Repeater, WLL (Wireless Local Loop) Base Station, Multicarrier Driver Amplifier for PCN-PCS, TDMA Base Station Power Amplifier.
N-CDMA Base Station Final-Stage PA
The MRF6S19060NBR1's factory-matched 1930-1990 MHz band and 12 W average output with 16 dB gain make it ideal for N-CDMA base-station final-stage power amplifiers where linear multi-carrier output is required. Deployed at 28 V drain in Class AB bias, it delivers the spectral mask compliance and ACPR needed for 1.9 GHz PCS downlink. Compared with discrete bipolar alternatives, the lateral MOSFET provides higher input impedance that simplifies driver-stage matching.
Recomendado
WCDMA Multi-Carrier Power Amplifier
For WCDMA and multi-carrier amplifier applications in the 1.93 GHz PCS band, the MRF6S19060NBR1's lateral-MOSFET linearity and 5:1 VSWR tolerance provide the ruggedness required for tower-top infrastructure. Operating at 28 V in Class AB, it preserves modulation accuracy across multiple WCDMA carriers. The integrated ESD protection reduces field-failure risk in outdoor base-station cabinets, and the ceramic TO-272 package enables direct PCB mounting without flange hardware.
Recomendado
PCS/Cellular Radio Infrastructure Repeater
In PCS/cellular radio repeater designs, the MRF6S19060NBR1 provides 12 W average at 1930-1990 MHz with low memory effects and stable gain across temperature. Class-AB bias and 28 V supply are standard for tower-mounted repeaters where efficiency and thermal headroom matter. The TO-272 wide-body ceramic package offers low thermal resistance for fan-less sealed enclosures, and the surface-mount gull-wing leads suit automated assembly.
Recomendado
WLL (Wireless Local Loop) Base Station
WLL base stations operating in the 1.93 GHz band benefit from the MRF6S19060NBR1's 12 W average output and 16 dB gain, eliminating the need for a parallel-combined PA chain in single-sector deployments. The lateral-MOSFET structure ensures predictable ACPR behavior critical for point-to-multipoint fixed-wireless links. Designers use the NXP reference circuit with the recommended input/output matching network to meet ETSI and FCC spectral masks.
Recomendado
Multicarrier Driver Amplifier for PCN-PCS
As a driver stage for higher-power PCN-PCS final amplifiers, the MRF6S19060NBR1's 16 dB gain reduces the burden on upstream gain blocks. The 12 W output comfortably drives a final stage requiring 1-2 W of input, with margin for AGC loop headroom. Its factory-matched 1.93 GHz input network eliminates tuning iterations in volume production, and the TO-272 ceramic package's low-inductance source grounds improve stability under high-drive conditions.
Recomendado
TDMA Base Station Power Amplifier
TDMA base-station power amplifiers operating at 1930-1990 MHz can use the MRF6S19060NBR1 in Class C mode for higher efficiency when linearity permits. The device's 28 V drain rating and rugged 5:1 VSWR tolerance simplify the isolator and protection-circuit design. In TDMA applications the 12 W average output maps directly to time-slot power budgets, and the ceramic TO-272 package handles the thermal dissipation with minimal PCB copper area.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF6S19060NBR1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF6S19060NR1 | MRF6S19120NR1 | MRF6S18100NR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz |
| Average Output Power | 12 W | 12 W | ~20 W | ~10 W (100 W pulsed) |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Technology | Lateral N-MOSFET | Lateral N-MOSFET | Lateral N-MOSFET | Lateral N-MOSFET |
| Packing Format | Tape & Reel (B suffix) | Tray (no B suffix) | Tape & Reel | Tape & Reel |
Principais diferenciais
- Factory-matched 1.93 GHz input/output networks
- Lateral N-MOSFET architecture
- 5:1 VSWR tolerance with all-phase-angle ruggedness
- Integrated ESD protection
Notas de projeto
Estimated: at 12 W average output, 28 V supply, and ~33% drain efficiency (typical CDMA bias), the device dissipates approximately 24 W as heat. The TO-272 ceramic flange provides a low junction-to-case thermal resistance (refer to datasheet theta_JC, typically 0.5-0.8 C/W); the PCB must include a continuous ground-copper pour under the source flange, and a thermal interface material or direct solder attach is required for full-power operation. Without proper thermal design, junction temperature will exceed 150C and trigger thermal shutdown or device failure.
Follow the NXP reference PCB layout exactly. The 50-ohm microstrip lines to pins 1 (input) and 2 (output) must be impedance-controlled (typical substrate 0.5-0.8 mm Rogers RO4003 or FR4 with controlled Dk). The source flange (pin 3) requires a continuous ground plane with multiple via arrays stitching to the bottom layer for low-inductance grounding. Do not route bias or digital signals under the RF path - keep the gate and drain bias networks compact and close to the package to minimize parasitic feedback.
Always apply gate bias (Vgs) before applying drain voltage (Vdd); absence of gate bias at full drain voltage can cause device damage. Use the manufacturer reference bias network with the recommended gate-source resistor (typically 10-100 kohm) to prevent RF oscillation at startup. Verify load-pull matching against the test circuit in the NXP datasheet before production release, because source/load impedances that deviate more than 20% from datasheet values reduce gain and Pout. Do not operate without an isolator or adequate VSWR protection at the antenna port.
Decouple the drain supply at the device pin with a 10 uF + 100 nF + 1 nF capacitor network placed within 2-3 mm of pin 2 to suppress parasitic oscillations. The gate bias line should include a ferrite bead or RFC plus 1 nF + 10 uF decoupling to prevent RF leakage into the bias supply. Keep the input and output matching networks orthogonal - avoid parallel runs - to prevent feedback that can cause instability. All grounding vias should be 0.3 mm drilled and plated, placed on a 1 mm pitch grid.
Informações de conformidade
RoHS compliance per NXP product page. Not AEC-Q100 qualified - this is an RF infrastructure device, not an automotive part. Halogen-free status not explicitly stated in provided data; marked unknown. Original part was Freescale Semiconductor, now NXP USA Inc. after acquisition.
