MRF6V13250HR5 - 250W RF Power LDMOS, 1300MHz, NI-780 | NXP
N.º da peça: MRF6V13250HR5 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $402.97 | $402,97 |
| 10 | $365 | $3.650,00 |
| 50 | $332.5 | $16.625,00 |
| 100 | $305.8 | $30.580,00 |
| 500 | $278.4 | $139.200,00 |
MRF6V13250HR5 Visão geral
A radio-frequency power transistor (RF LDMOS) is a specialized discrete semiconductor optimized to amplify high-frequency signals with high efficiency and ruggedness, typically used as the final stage in a transmitter chain. RF transistors sit within the broader hierarchy of discrete semiconductors -> transistors -> RF transistors -> RF power MOSFETs. The LDMOS architecture combines a lateral current flow with a vertical double-diffused structure, providing high breakdown voltage, low feedback capacitance, and excellent thermal conductivity through the ceramic flange.
Key specifications include 250 W CW output power capability, 22.7 dB gain at 1300 MHz, and operation from 50 V supply. The NI-780H-2L ceramic-metal flange package provides a low thermal resistance from junction to the heatsink surface, enabling sustained high-power operation with appropriate cooling. The 120 V drain-source voltage rating provides ample headroom for pulsed avionics and radar waveforms.
Architecturally, the MRF6V13250HR5 uses a single N-channel LDMOS die designed to be stable into a 50 ohm load with broadband matching networks. The high gain reduces the number of driver stages needed in a transmitter chain, while the LDMOS process offers intrinsic thermal stability and tolerance to load mismatch. Internal input and output matching structures simplify board-level integration in Class AB amplifiers.
Typical applications include 1300 MHz avionics transponders, Distance Measuring Equipment (DME), Tactical Air Navigation (TACAN), secondary surveillance radar, and industrial RF heating systems. The wide 960-1500 MHz coverage suits both aerospace navigation bands and industrial/scientific telemetry links.
Designers should mount the device on a copper or brass heatsink with proper thermal interface material, and add a snubber network to protect against load mismatch. The 50 V supply rail should be well-decoupled to minimize RF feedback through the DC path.
This page synthesizes distributor pricing, drop-in-compatible NXP and cross-brand alternatives, and practical thermal/PCB design notes not collated on any single manufacturer page.
Alternativas drop-in para MRF6V13250HR5 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF6V1430HR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V12250HR5
📋 Alternativa de referência (fora do catálogo)
MRF6V2150HR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V10010HR5
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
BLF188XR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V13250HR5 Classificações máximas e características elétricas
| Tipo de transistor | LDMOS, N-Channel |
| Frequency Range | 960 MHz to 1500 MHz |
| Test Frequency | 1.3 GHz (1300 MHz) |
| Output Power (Pout) | 250 W CW |
| Power Gain | 22.7 dB at 1300 MHz |
| Drain-Source Voltage (Rated) | 120 V |
| Test Voltage | 50 V |
| Test Quiescent Current (Idq) | 100 mA |
| Test Bias Current | 100 mA |
| Encapsulamento / Caixa | NI-780H-2L (ceramic flange) |
| Supplier Device Package | NI-780H-2L |
| Tipo de montagem | Chassis / Flange Mount |
| Nível MSL | 1 (Unlimited) |
| Maximum Power Dissipation (Abs) | 476 W |
| Operating Mode | Class AB (CW or pulsed) |
Configuração de pinos do MRF6V13250HR5
| Pino 1 | DRAIN — RF drain (50 V bias, RF output via matching) |
| Pino 2 | GATE — RF gate input (DC bias fed through bias-T) |
| Pino 3 | FLANGE / SOURCE — DC + RF ground (bolts to heatsink) |
Área de Operação Segura - Vds vs Id (estimated)
Aplicações típicas
MRF6V13250HR5 é adequado para 6 aplicaçãos: Aerospace Transponder Power Amplifier, Distance Measuring Equipment (DME), TACAN Beacon Transmitter, Secondary Surveillance Radar (SSR), Industrial RF Heating / Plasma Drive, Multi-Mode L-Band Avionics Driver Chain.
Aerospace Transponder Power Amplifier
Provides the final-stage CW RF amplification in 1030/1090 MHz airborne and ground transponders. The MRF6V13250HR5's 250 W output at 50 V and 22.7 dB gain at 1300 MHz meets Mode-S transponder intermediate-power stages; with 50 V drain bias and a well-decoupled DC feed it cleanly amplifies 1090 MHz interrogation pulses with low distortion, while the 120 V drain rating provides headroom for envelope overshoot during mismatch. Designers place a circulator or isolator after the device to protect the matched output, then drive into an antenna diplexer.
Recomendado
Distance Measuring Equipment (DME)
Drives the final RF stage of 1025-1150 MHz ground interrogators and airborne transponders. The MRF6V13250HR5's 250 W CW capability at 1300 MHz maps onto DME pulse pairs with >250 W peak envelope power and >85% nominal duty. According to the manufacturer datasheet the device delivers 22.7 dB gain at 1300 MHz, allowing the driver to run at less than 1 W. A ceramic-loaded 50 ohm combiner at the output maintains spectral purity and minimizes radar-sideband spurious emissions.
Recomendado
TACAN Beacon Transmitter
Provides 250 W final amplification in 962-1213 MHz Tactical Air Navigation (TACAN) beacon transmitters. The MRF6V13250HR5 covers the full TACAN band, and the high LDMOS gain at 1300 MHz allows the navigator set to maintain solid margin over temperature. Per the datasheet the device is biased at 50 V with 100 mA Idq for Class AB linearity - well suited to the variable-amplitude pulse bursts TACAN encodes with bearing information.
Recomendado
Secondary Surveillance Radar (SSR)
Functions as the 1090 MHz reply transmitter final stage in SSR ground stations. The MRF6V13250HR5's 250 W CW Pout and 120 V Vds rating comfortably handle the rapid 1090 MHz reply pulse bursts demanded by Mode-S uplink ground interrogators. Its LDMOS architecture exhibits the ruggedness to tolerate 10:1 output VSWR with proper snubber networks, enabling reliable operation into antenna faults without destructing the device.
Recomendado
Industrial RF Heating / Plasma Drive
Serves as the final stage in 1300 MHz industrial RF generators used for material processing and plasma excitation. The MRF6V13250HR5's continuous-wave 250 W rating suits fixed-frequency plasma reactor drive when paired with an external isolator. Designers appreciate the 50 V bias simplicity - a single regulated supply replaces the dual-rail bias chains needed by some competing parts, while the NI-780H-2L flange mounts directly onto a copper cold-plate used as the process chamber wall.
Recomendado
Multi-Mode L-Band Avionics Driver Chain
Cascades the MRF6V13250HR5 with a smaller NXP driver LDMOS to build a 3-stage amplifier chain covering 1030 MHz uplink, 1090 MHz downlink, DME, and TACAN from a single BOM. According to the datasheet the 22.7 dB gain at 1300 MHz reduces the driver stages required. The 120 V drain rating provides sufficient envelope headroom across all four modes without retuning the matching network between transmit and receive windows.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF6V13250HR5 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF6V1430HR5 | MRF6V12250HR5 | MRF6V2150HR5 | BLF188XR |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | NI-780H-2L | NI-780H-2L | NI-780H-2L | NI-780H-2L | NI-780S (compatible form factor) |
| Output Power (CW) | 250 W | 300 W | 250 W | 150 W | 200 W (DVB-T class) |
| Frequency Range | 960-1500 MHz | 960-1500 MHz | 1200-1400 MHz | 1800-2200 MHz | 470-860 MHz |
| Drain Voltage (Rated) | 120 V | 120 V | 120 V | 65 V | 130 V |
| Test Voltage | 50 V | 50 V | 50 V | 28 V | 50 V |
| Lifecycle Status | Obsolete (limited stock) | Obsolete (limited stock) | Obsolete (limited stock) | Active | Active |
Principais diferenciais
- Tuned for L-band avionics, not UHF TV (vs BLF188XR)
- Higher output power within same NI-780 family (vs MRF6V2150HR5)
- 120V Vds breakdown provides margin (vs MRF6V2150HR5)
Notas de projeto
The NI-780H-2L ceramic flange must be mounted on a flat copper or aluminum heatsink with the thermal compound spread to less than 0.05 mm tolerance on the mating surface. Estimated at 250W CW and 65% drain efficiency, the device dissipates about 135W internally - a heatsink rated to 0.1 C/W or lower (forced-air cooling) is required to keep the junction below 200C. Without adequate thermal sinking the device will thermally fold back and eventually fail.
Do not operate the MRF6V13250HR5 into an open or short-circuited load without an isolator - the 120V drain rating is for matched loads and excessive VSWR will exceed the SOA envelope. Add a snubber network (low-pass RC) at the drain to absorb the leading edge of pulsed mismatches and a ferrite-loaded 50-ohm isolator between the device output and the antenna feed. Neglecting these protective measures is the most common cause of LDMOS failures.
Layout the gate and drain matching networks on a Rogers RO4350B or equivalent high-frequency substrate with controlled impedance traces. Estimated trace-to-trace coupling is significant above 1 GHz - keep gate and drain traces on opposite sides of the package footprint and short the ground return path with the maximum possible via array directly adjacent to the source flange. DC bias feeds must be routed through RF chokes that present a high impedance at 1300 MHz.
Informações de conformidade
Per GlobalSpec datasheet archive: REACH Unaffected. RoHS compliance status not stated in any retrieved web source, hence 'unknown'. AEC-Q100 is not applicable because this is a discrete RF power transistor, not an automotive-grade IC.