MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
N.º da peça: MRF6V4300NBR5 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $138.5 | $1.385,00 |
| 100 | $132 | $13.200,00 |
| 250 | $128.75 | $32.187,50 |
| 500 | $125 | $62.500,00 |
MRF6V4300NBR5 Visão geral
A radio-frequency power MOSFET is a discrete transistor optimized to deliver large amounts of RF output power into a 50-ohm load while withstanding the high peak voltages and currents found in CW and pulsed amplifier chains. Compared to bipolar RF power transistors, lateral MOSFETs offer higher input impedance, simplified biasing, and better thermal stability. The MRF6V4300N family sits at the high-power end of NXP's VHV6 (Very High Voltage 6th generation) lateral MOSFET portfolio, slotting between the lower-power MRF6V3090N series and higher-frequency N-channel devices targeted at 1 GHz and above.
Key features include broadband performance from 10 MHz to 600 MHz, 22 dB power gain, integrated ESD protection, internally matched input on related part numbers, and the ability to survive 10:1 VSWR at all phase angles when operated at 50 V Vdd. Devices are characterized with series-equivalent large-signal impedance parameters to simplify class AB/AB-F amplifier matching-network synthesis using standard simulation tools.
Typical applications include UHF television transmitters, industrial RF heating, scientific particle accelerators, CO2 laser drivers, and broadband CW driver amplifiers feeding higher-power tubes or solid-state pallets. The unmatched input and output give RF designers full freedom to design matching networks optimized for their specific frequency band and harmonic profile, trading pin count simplicity for RF flexibility.
Design considerations for this device include mandatory output-load mismatch protection, robust heat-sinking through the bolt-down ceramic flange, and bias sequencing to prevent thermal runaway. Designers should verify with NXP's AN1977 application note and reference designs before committing the part to production layouts.
Alternativas drop-in para MRF6V4300NBR5 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRF6V4300NBR5 (mesmo formato e footprint) — diferindo em Mounting Type, Test Frequency, Transistor Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF6V3090NBR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V2300NBR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V20100NBR5
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF5S4125NBR1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF6V4300NBR5 Classificações máximas e características elétricas
| Tipo de transistor | RF Power MOSFET, N-Channel Enhancement-Mode Lateral |
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vds) Maximum | 110 V |
| Operating Frequency Range | 10 MHz to 600 MHz |
| Test Frequency | 450 MHz |
| Output Power (Pout) | 300 W CW |
| Power Gain (Gps) | 22 dB typical at 450 MHz, 50 V |
| Operating Drain Voltage (Vdd) Typical | 50 V |
| Input Matching | Unmatched (external matching required) |
| VSWR Capability | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference |
| Encapsulamento | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) |
| Tipo de montagem | Surface Mount / Flange Mount with screws |
| Tape & Reel Packaging | Yes (suffix R5 indicates 250-unit reel) |
Configuração de pinos do MRF6V4300NBR5
| Pino 1 | Gate — RF input / gate bias |
| Pino 2 | Drain — RF output / DC drain supply (Vdd) |
| Pino 3 | Source — Source / RF ground |
| Pino 4 | Drain — RF output / DC drain supply (Vdd) - paralleled with pin 2 |
MRF6V4300N Área de Operação Segura (DC)
Aplicações típicas
MRF6V4300NBR5 é adequado para 6 aplicaçãos: UHF Television Transmitter Final Stage, Industrial RF Heating / Plasma Generator, Scientific Particle Accelerator Driver, CO2 Laser RF Exciter, Broadband CW Driver Amplifier, Medical RF Ablation Generator.
UHF Television Transmitter Final Stage
The MRF6V4300NBR5's 300 W CW output at 50 V Vdd and 22 dB gain at 450 MHz make it ideal for the final amplifier stage of UHF DVB-T/ATSC television transmitters operating in the 470-860 MHz band. In a typical transmitter lineup it follows a lower-power driver (such as MRF6V3090NBR5 at 90 W) and feeds a bandpass filter and antenna combiner network. The 110 V Vds breakdown supports the high peak voltages encountered when driving reactive loads. Lateral MOSFET architecture gives stable gain versus temperature, which is critical for maintaining modulation accuracy (MER/EVM) across a transmitter's operating temperature range, and the device's 10:1 VSWR ruggedness protects the final stage from antenna mismatch events during broadcast.
Recomendado
Industrial RF Heating / Plasma Generator
Industrial RF heating systems at 13.56 MHz, 27.12 MHz, 40.68 MHz, and ISM-band frequencies require hundreds of watts to kilowatts of CW RF power delivered into a reactive plasma or dielectric load. The MRF6V4300NBR5's 10-600 MHz bandwidth and 300 W CW rating position it as a building-block amplifier stage that can be combined with power combiners for higher-power industrial generators. Lateral MOSFET technology provides the high input impedance and bias stability needed for continuous-duty industrial environments. Designers must add comprehensive VSWR and over-temperature protection because industrial loads (plasmas, mismatched dielectric loads) routinely present reactive impedances outside 50 ohms.
Recomendado
Scientific Particle Accelerator Driver
Particle accelerators and high-energy physics research installations use CW RF power amplifiers in the VHF/UHF range to drive accelerator cavities and RFQ structures. The MRF6V4300NBR5's combination of 600 MHz upper frequency limit, 300 W CW output, and 110 V Vds rating suits 200-500 MHz cavity driver applications. The unmatched input/output gives RF engineers the freedom to design cavity-specific matching networks that present the optimum beam-loading impedance to the accelerator structure. Stable gain versus temperature is critical because accelerator RF systems run 24/7 and require predictable amplitude/phase control for beam dynamics.
Recomendado
CO2 Laser RF Exciter
Slab and RF-excited CO2 lasers use 81 MHz or 100-200 MHz RF power to sustain a glow discharge in the laser gas mixture. The MRF6V4300NBR5's VHF coverage and 300 W CW output are well-matched to mid-power CO2 laser exciters where stable continuous discharge is required. The lateral MOSFET's high input impedance simplifies the interface to standard 50-ohm function generators or Q-switch drivers. Designers add a DC blocking capacitor and matching network to transform the 50-ohm source to the discharge tube's plasma impedance, plus an RF choke to separate the DC bias from the RF path.
Recomendado
Broadband CW Driver Amplifier
When higher-power amplifier chains need a broadband CW driver, the MRF6V4300NBR5's 10-600 MHz bandwidth and 22 dB gain make it a flexible driver for traveling-wave tube amplifiers (TWTAs), higher-power solid-state pallets, and instrumentation RF sources. Placed between a low-level signal generator/synthesizer and the final amplifier, it adds +22 dB of gain while presenting a 50-ohm matched interface (with appropriate external matching). The 300 W output can drive an additional 300 W stage or be combined with parallel stages for kilowatt-class outputs using Wilkinson or hybrid combiners.
Recomendado
Medical RF Ablation Generator
Medical RF ablation systems (used in cardiology, oncology, and pain management) require tens to hundreds of watts of CW RF power delivered into tissue via catheter or probe electrodes. The MRF6V4300NBR5's VHF/UHF capability and 300 W CW rating make it suitable for higher-power ablation generators operating at 460 kHz to several MHz. The 110 V Vds rating provides the headroom needed for the dynamic impedance changes that occur during tissue ablation. Integrated ESD protection helps survive the electrostatic discharge events that occur when electrodes are connected/disconnected, and lateral MOSFET stability simplifies the closed-loop power control required for clinical-grade energy delivery.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF6V4300NBR5 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF6V3090NBR5 | MRF6V2300NBR5 | MRF6V20100NBR5 | MRF5S4125NBR1 |
|---|---|---|---|---|---|
| Package | TO-272 WB-4 (NI-1230) | TO-272 WB-4 - same family | TO-272 WB-4 - same family | TO-272 WB-4 - same family | TO-272 WB-4 - same family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 300 W CW | 90 W CW | 230 W CW | 100 W CW | 125 W CW |
| Frequency Range | 10 MHz - 600 MHz | 10 MHz - 600 MHz | 10 MHz - 600 MHz | 10 MHz - 600 MHz | 1.8 GHz - 2.16 GHz |
| Drain-Source Voltage (Vds) Max | 110 V | 110 V | 110 V | 110 V | 65 V |
| Operating Vdd | 50 V typical | 50 V typical | 50 V typical | 50 V typical | 28 V typical |
| Power Gain (Gps) | 22 dB typical | 22 dB typical | 22 dB typical | 22 dB typical | 11.5 dB typical |
Principais diferenciais
- Highest CW output power in the VHV6 TO-272 family at this frequency band (vs MRF6V3090NBR5)
- Optimized for low-VHF through UHF operation (vs MRF5S4125NBR1)
- Lower-power sibling provides design scaling path (vs MRF6V2300NBR5)
Notas de projeto
The MRF6V4300NBR5 dissipating 300 W CW at typical 60% efficiency generates approximately 200 W of waste heat that must be removed through the bolt-down ceramic flange to a chassis-mounted heat sink or liquid cold plate. Apply thermal compound (such as Wakefield Type 120 silicone grease) or indium foil between flange and heat sink to minimize thermal resistance. Estimated: assuming thermal resistance junction-to-flange of 0.15 C/W and heat sink-to-ambient of 0.05 C/W with forced air cooling, junction temperature rise is approximately 10 C above the heat sink base, which itself must stay below 70 C for reliable CW operation.
Because the device is unmatched on both input and output, the PCB layout must provide controlled-impedance transmission lines (typically 50-ohm microstrip or stripline) from the gate matching network through to the drain matching network. Keep gate matching components close to pin 1 to minimize parasitic inductance that could create instability. Use a solid ground plane with multiple low-inductance vias stitching the source leads (pin 3 and the mounting flange) to the chassis ground. Provide isolation between input and output matching networks to prevent feedback oscillation.
Common pitfalls when designing with the MRF6V4300NBR5 include: (1) exceeding 110 V Vds under VSWR-induced voltage peaks, (2) omitting gate protection from RF overdrive which can forward-bias the gate-source junction, (3) failing to sequence gate bias before drain voltage to prevent thermal runaway, and (4) underestimating heat-sinking requirements for CW service. Always include a gate clamp circuit (typically a BAV99 or similar fast diode pair) and a drain over-voltage transient suppressor rated for the worst-case load mismatch.
Estimated: bias sequencing requires the gate bias (Vgs ~2.5 V for class AB quiescent current) to be applied before the drain voltage (Vdd) ramps up, typically with a 100 ms delay to ensure quiescent current is stable. Use a dedicated gate bias supply with current limiting to prevent catastrophic gate failure if the device oscillates. A bleed resistor of 10 kOhm from gate to source ensures the device defaults to off-state when bias is removed.
Informações de conformidade
This part is a high-power RF transistor in a ceramic-overmolded flange package; RoHS/REACH status was not explicitly stated in the verified web data and should be confirmed with the manufacturer's product page. Not AEC-Q100 qualified - this is an industrial/aerospace/defense RF component, not an automotive-grade part.
