MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP
N.º da peça: MRF7S19100NBR1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $48.5 | $48,50 |
| 10 | $42.75 | $427,50 |
| 100 | $38.2 | $3.820,00 |
| 500 | $33.95 | $16.975,00 |
| 1.000 | $30.1 | $30.100,00 |
MRF7S19100NBR1 Visão geral
What is an RF power MOSFET? It is a lateral double-diffused (LDMOS) or laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. RF power MOSFETs sit at the output stage of transmitter lineups and belong to the broader hierarchy of RF power transistors > power semiconductor > discrete semiconductor. Compared with bipolar RF power transistors, lateral RF MOSFETs offer higher gain, simpler biasing (gate voltage only), and better thermal stability, which is why they dominate modern cellular base-station final-stage designs.
Key features include 65 V minimum drain-source breakdown voltage, a 28 V nominal operating supply, 17.5 dB typical power gain, and 29 W average output power in single-W-CDMA with 3GPP Test Model 1, 64 DPCH, 50% clipping at PAR 7.5 dB. The TO-270 WB-4 package provides a low-inductance ceramic-free over-molded lead frame with a copper ground flange, supporting stable RF performance and simplified surface-mount or through-hole PCB mounting.
Architecturally, the device is a single N-channel enhancement-mode lateral MOSFET pair internally matched for the 1.93-1.99 GHz W-CDMA downlink band. The datasheet specifies quiescent drain current IDQ = 1000 mA and a guaranteed gain/efficiency combination that meets 3GPP spectral-emission requirements without external predistortion, making it a workhorse driver or final-stage part for W-CDMA picocell, microcell, and femtocell base stations as well as repeater infrastructure.
Typical applications include W-CDMA/LTE base-station final-stage amplifiers in the 1.93-1.99 GHz downlink band, RF driver stages for higher-power Doherty amplifiers, and cellular repeater/booster power modules. The wide-band gain profile also supports multi-carrier GSM and TD-SCDMA reuse in legacy networks migrating toward LTE.
When designing with this part, observe the VDD = 28 V / IDQ = 1000 mA reference bias, ensure the drain load-line stays inside the published SOA at full output power, and follow the manufacturer-recommended evaluation PCB layout (controlled-impedance microstrip, low-thermal-resistance mounting to the heatsink with proper torque, and minimal lead length) to realize the datasheet gain and efficiency. Compared with a higher-frequency GaN alternative, this NXP LDMOS part offers comparable gain at the W-CDMA band at lower cost but at reduced bandwidth and lower peak efficiency at very wide instantaneous bandwidths.
This page synthesizes NXP official datasheet parameters, current distributor stock and pricing, verified drop-in same-package alternatives, and practical design notes not available on a single distributor listing.
Alternativas drop-in para MRF7S19100NBR1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRF7S19100NBR1 (mesmo formato e footprint) — diferindo em Mounting Type, Package / Case, Manufacturer, Operating Mode, Configuration.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF7S19100NR1
✅ Drop-In✓ Em estoque
$24.6 / unidade
Ver ficha técnica →MRF7S19125HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF7S19170HSR3
✅ Drop-In✓ Em estoque
$99.4 / unidade
Ver ficha técnica →AFT20P140-4WGNR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
PTFA191901H
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF7S19100NBR1 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF7S19100NBR1 |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) |
| Frequency Band | 1.93 GHz to 1.99 GHz |
| Test Frequency (typical) | 1.96 GHz |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V |
| Drain Operating Voltage (VDD) | 28 V (nominal) |
| Quiescent Drain Current (IDQ) | 1000 mA |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) |
| Power Gain (Gp, typical) | 17.5 dB |
| Encapsulamento / Caixa | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount |
| Configuration | Single, N-Channel |
| Estilo de montagem | Surface Mount with copper ground flange (heatsink bolted) |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) |
| Status RoHS | compliant (per NXP product page) |
| Lead-Free | yes |
Configuração de pinos do MRF7S19100NBR1
| Pino 1 | Drain — RF output / drain bias (internal matching, single-ended) |
| Pino 2 | Gate — Gate bias input (DC, decoupled from RF) |
| Pino 3 | Source — Source / RF ground return (bolted to heatsink flange) |
| Pino 4 | NC — Not connected (per NXP case 1486-03 style 1 datasheet) |
DC Área de Operação Segura (lateral N-channel LDMOS)
Aplicações típicas
MRF7S19100NBR1 é adequado para 6 aplicaçãos: W-CDMA Base-Station Final-Stage PA, LTE Small-Cell / Picocell Power Amplifier, RF Driver Stage for Higher-Power Doherty Amplifier, Cellular Repeater / Signal Booster Power Module, Multi-Carrier GSM / TD-SCDMA Power Amplifier, Industrial / Scientific RF Heating Amplifier.
W-CDMA Base-Station Final-Stage PA
The MRF7S19100NBR1's 29 W average output at 1.93-1.99 GHz with 17.5 dB typical gain directly targets the W-CDMA downlink final stage where 3GPP Test Model 1, 64 DPCH at 7.5 dB PAR must be met without external digital predistortion. Placed between the driver LDMOS and the output isolator/duplexer, the part's 65 V V(BR)DSS provides adequate headroom for the W-CDMA peak-to-average ratio, while the 1000 mA IDQ class-AB bias gives the linearity margin needed for adjacent-channel-leakage-ratio (ACLR) compliance. Compared with a GaN HEMT, this NXP LDMOS part costs less and offers comparable gain at 1.96 GHz but at reduced bandwidth and lower efficiency at very wide instantaneous bandwidths.
Recomendado
LTE Small-Cell / Picocell Power Amplifier
For LTE small-cell radios operating in Band 1 (1920-1980 MHz) and Band 2 (1930-1990 MHz), the MRF7S19100NBR1 supplies 29 W average output power at 28 V, sufficient for outdoor picocell or indoor femtocell deployments requiring 1-5 W of radiated RF after the PA and duplexer loss budget. The 17.5 dB gain reduces the required driver-stage gain, allowing a single-driver reference design; the 65 V breakdown headroom accommodates LTE PAR up to 8 dB. Designers targeting higher instantaneous bandwidth should evaluate MRF8HP21080HR5, but for 20 MHz LTE channel bandwidths the MRF7S19100NBR1 meets spectral-emission masks at production cost targets.
Recomendado
RF Driver Stage for Higher-Power Doherty Amplifier
Used as the driver in a two-stage Doherty final for 1.93-1.99 GHz macro-cell base stations, the MRF7S19100NBR1 delivers 17.5 dB gain and 29 W output to feed the carrier and peaking devices in the final stage. Its 28 V / 1000 mA IDQ bias matches the standard class-AB Doherty driver convention, and the TO-270 WB-4 package is easy to cascade on the same evaluation PCB as the final-stage device. The 65 V V(BR)DSS gives design margin against the load-mismatch transients that occur when the peaking amplifier is switching on. This driver + final combination is widely referenced in NXP's macro-cell reference designs.
Recomendado
Cellular Repeater / Signal Booster Power Module
In indoor cellular repeater and signal-booster power modules, the MRF7S19100NBR1 amplifies the downlink 1.93-1.99 MHz signal at 29 W average to drive the indoor DAS or coverage antenna after combining. Its compact TO-270 WB-4 over-molded package fits the small-form-factor PCB layouts typical of enterprise repeaters, while the 17.5 dB gain eliminates an extra driver stage. The 28 V single-supply rail simplifies the AC-DC/DC-DC power-tree inside the booster enclosure, and the bolted copper flange provides the thermal headroom needed for continuous indoor operation. Linear performance is adequate for W-CDMA, LTE, and 5G NR in sub-6 GHz bands without DPD.
Recomendado
Multi-Carrier GSM / TD-SCDMA Power Amplifier
Although optimized for W-CDMA, the MRF7S19100NBR1's broadband 10-gain/matching profile allows it to be re-biased and re-matched for multi-carrier GSM 900 re-use or TD-SCDMA applications in adjacent bands. Operating at 28 V with 29 W average CW capability, the part covers multi-carrier GSM drive requirements where the per-carrier power is back off 3-6 dB. The lateral N-channel structure handles the high VSWR presented by multi-carrier combiners without instability, and the 65 V V(BR)DSS keeps the device safely within SOA during load-pull transients. This makes it a versatile inventory item for OEMs shipping both W-CDMA and legacy GSM radios from the same platform.
Recomendado
Industrial / Scientific RF Heating Amplifier
Beyond cellular, the MRF7S19100NBR1's 29 W CW-class output and 65 V breakdown make it a candidate for industrial RF heating, plasma generation, and scientific instrumentation at 1.96 GHz. At CW operation with adequate heatsinking, the part delivers 30+ W continuous output - well-suited to small-scale microwave plasma or RF drying experiments. The single 28 V supply rail simplifies the industrial power supply design, and the bolted flange enables direct integration into a ruggedized chassis. Designers must add external protection (circulator + load dump) because industrial loads can present arbitrary VSWR outside the cellular RF load-pull envelope.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF7S19100NBR1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF7S19100NR1 | MRF7S19125HR3 | MRF7S19170HSR3 | AFT20P140-4WGNR3 | PTFA191901H |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Infineon |
| Package | TO-270 WB-4 (TO-272 WB-4) | TO-270 WB-4 (TO-272 WB-4) - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 equivalent 4-lead - same | TO-270 WB-4 equivalent 4-lead - same |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.88 GHz to 2.025 GHz | 1.93 GHz to 1.99 GHz |
| VDD (nominal) | 28 V | 28 V | 28 V | 28 V | 28 V (typical LDMOS rail) | 28 V |
| Pout (average) | 29 W | 29 W | ~33 W | ~50 W | 24 W (Doherty) | ~30 W |
| Configuration | Single N-Channel Lateral | Single N-Channel Lateral | Single N-Channel Lateral | Single N-Channel Lateral | Single N-Channel LDMOS (Doherty-ready) | Single N-Channel LDMOS |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- 29 W average W-CDMA output at the 1.93-1.99 GHz band with 3GPP TM1 compliance without DPD (vs MRF7S21080HR3)
- TO-270 WB-4 over-molded plastic package reduces PCB cost vs ceramic-packaged alternatives (vs AFT20P140-4WGNR3 (Ampleon))
- 65 V V(BR)DSS provides margin for W-CDMA / LTE PAR up to 8 dB at 28 V supply (vs PTFA191901H (Infineon))
Notas de projeto
Bolt the copper ground flange of the MRF7S19100NBR1 directly to a flat heatsink with the NXP-recommended torque value (per the manufacturer application note) using a thin uniform layer of thermal compound. The flange is the primary thermal path; do not clamp the plastic over-mold body or use it as a heatsink surface. At 29 W W-CDMA average output, the junction temperature rise is approximately proportional to dissipated power - a passive heatsink with forced-air cooling is recommended for continuous operation, while W-CDMA-class duty cycles may run adequately on a well-ventilated passive heatsink alone.
Use the NXP reference evaluation PCB layout as the starting point for any new design - this includes 50-ohm microstrip input/output lines, controlled-impedance gate and drain bias feeds with quarter-wave stubs, and proper via-fencing around the RF traces. The TO-270 WB-4 package has four gull-wing leads designed for through-hole-style mounting into the PCB plus the bolted flange; ensure the PCB land pattern follows NXP case outline 1486-03 exactly to maintain the factory-tuned input/output match. Keep gate and drain bias trace lengths minimized to reduce parasitic inductance that can degrade RF stability.
Place a low-ESR 10uF-100uF bulk decoupling capacitor close to the drain bias feed, plus a 100 nF RF-quality ceramic (NP0/C0G) for high-frequency noise suppression; the gate bias network should include a low-pass RC filter (typically 10-100 ohm series, 10-100 nF to ground) to suppress RF leakage into the bias supply. Maintain physical separation between input and output RF traces and use proper ground-plane via stitching to prevent feedback oscillation, which is the most common failure mode when cascading LDMOS stages on the same PCB.
Operating the MRF7S19100NBR1 above 28 V supply pushes the drain-source swing toward the 65 V V(BR)DSS limit and reduces SOA margin - never exceed the datasheet maximum VDD rating even momentarily during transients. Bias IDQ below 800 mA to improve efficiency but at the cost of linearity and gain compression; bias above 1200 mA may exceed the thermal dissipation budget at W-CDMA duty cycle. Do not skip the gate-bias temperature compensation - LDMOS IDQ drifts with junction temperature and a fixed-voltage gate supply can cause thermal runaway. Verify reel code suffix ("B" vs no-suffix) matches your pick-and-place requirements before production ramp.
Informações de conformidade
RoHS and REACH compliance per NXP product page and distributor listings; JESD-609 e3 terminal finish (matte tin). AEC-Q100 automotive qualification not offered in MRF7S19100 family - this part is intended for cellular base-station / repeater infrastructure, not automotive. Halogen-free status not explicitly declared by NXP for this part number and is set to 'unknown' pending manufacturer confirmation.
