MRF9135LR3 - 880 MHz, 135 W, 26 V RF Power LDMOS | NXP
N.º da peça: MRF9135LR3 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $87.5 | $875,00 |
| 100 | $80.25 | $8.025,00 |
| 500 | $74.1 | $37.050,00 |
| 1.000 | $69.5 | $69.500,00 |
MRF9135LR3 Visão geral
An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized to deliver multi-watt to multi-hundred-watt CW or pulsed RF output power with high drain efficiency. The MRF9135LR3 belongs to the NXP RF Sub-Micron MOSFET Line, sitting in the hierarchy of discrete semiconductor -> power MOSFET -> RF power transistor -> LDMOS -> base-station PA final stage. This category dominates cellular infrastructure PA design because LDMOS combines high breakdown, high gain, and acceptable linearity at 26-28 V rails for sub-3 GHz bands.
Key specifications include 135 W typical output power, approximately 17.5 dB typical power gain, and 60% typical drain efficiency in the 865-895 MHz band, all measured per NXP's standard 26 V / class-AB test conditions. The device is rated for 26 V VDD and broadband matched to simplify PCB integration. Integrated ESD protection and a thermally robust NI-780L ceramic flange with low thermal resistance support reliable CW operation in base-station chassis. The R3 suffix denotes tape-and-reel packaging for high-volume SMT-compatible assembly.
The architecture is a laterally diffused MOS gate over an N-channel drift region, with the source connected via through-wafer vias to a flange for low inductance. The die is matched internally for the 880 MHz band, which shortens design cycles by reducing external matching complexity. Integrated passive networks and matched input/output impedances allow direct PCB integration with microstrip or stripline matching networks, lowering BOM cost versus discrete VDMOS or GaN alternatives at sub-1 GHz frequencies.
Typical applications include GSM/EDGE 900 MHz base-station power amplifiers, industrial RF heating at UHF, broadcast UHF translators, and commercial RF lighting sources. The broadband match makes it equally well suited for pulsed radar driver stages in the 900 MHz ISM band and for amplifier modules used in professional radio repeaters. The R3 tape-and-reel variant enables automated high-volume assembly.
When designing with the MRF9135LR3, ensure the heatsink is sized for the full 26 V VDD x ~0.5 A quiescent DC idle dissipation plus the average RF power delivered to the load minus efficiency losses. A small-signal driver stage (for example MRF9130 or MRF9045) is recommended in front of this final-stage device because its gain alone is insufficient to drive an entire GSM PA chain from a few milliwatts.
Alternativas drop-in para MRF9135LR3 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRF9135LSR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF9135L
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRF9135LR3 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Motorola/Freescale) |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application Band | 865 MHz to 895 MHz |
| Operating Frequency | 880 MHz (typical) |
| Drain-Source Voltage (VDSS) | 65 V max |
| Gate-Source Voltage (VGS) | +/- 20 V max |
| Recommended Operating VDD | 26 V |
| Output Power (POUT) | 135 W typical at 880 MHz |
| Power Gain (Gp) | 17.5 dB typical |
| Drain Efficiency | 60% typical |
| Common-Source Configuration | Yes (large-signal class AB) |
| Encapsulamento | NI-780L ceramic flange |
| Packing Suffix | R3 (tape and reel) |
| Tipo de montagem | Flange mount, screw-down |
| Status RoHS | Compliant |
| Temperatura de junção de operação | -40C to +200C |
Configuração de pinos do MRF9135LR3
| Pino FLANGE | SOURCE — Source connection, also main heatsink interface (NI-780L flange, grounded through screw mount) |
| Pino LEAD-1 | GATE — RF input / DC gate bias (target bias approximately +2.5 V for class-AB quiescent current) |
| Pino LEAD-2 | DRAIN — RF output / DC drain supply (26 V VDD nominal via output matching network) |
Área de Operação Segura (DC, estimated envelope)
Aplicações típicas
MRF9135LR3 é adequado para 6 aplicaçãos: GSM/EDGE Base-Station Final-Stage PA, Industrial RF Heating at UHF, UHF Broadcast Translator Amplifier, Pulsed Radar Driver at 900 MHz ISM, Commercial RF Lighting Driver, Professional Radio Repeater Amplifier.
GSM/EDGE Base-Station Final-Stage PA
The MRF9135LR3 is purpose-built for GSM/EDGE 900 MHz base-station final-stage power amplifiers, where its 135 W POUT at 880 MHz and 17.5 dB gain slot directly into the standard 26 V class-AB PA architecture used in cellular infrastructure. With 60% typical drain efficiency, the part reduces DC power consumption and heatsink size versus older VDMOS designs, while the broadband internal matching across 865-895 MHz simplifies the output matching network to a few printed microstrip sections. The NI-780L ceramic flange provides low source inductance and a robust thermal path that survives continuous CW operation at base-station duty cycles. Designers pair the MRF9135LR3 with a smaller driver LDMOS such as the MRF9045 to deliver a complete multi-stage PA chain. For new GSM 900 designs in 2026, the MRF9135LR3 remains the cost-optimized, proven-reliability choice against which GaN alternatives must justify higher BOM cost.
Recomendado
Industrial RF Heating at UHF
Industrial UHF RF heating systems operating near 900 MHz can use the MRF9135LR3 as the final PA stage because the device's broadband match around 880 MHz covers the typical ISM-band heating frequencies without major retuning. The 135 W continuous-wave capability suits the long-on-time duty cycles of dielectric heating, plastic welding, and induction-assisted drying, where the LDMOS device's thermal margin and 60% drain efficiency reduce cooling system cost. The 26 V VDD rail is easily sourced from off-line switch-mode supplies commonly used in industrial RF generators, simplifying the overall system power architecture. Designers should size the heatsink for the full DC idle dissipation plus the residual RF loss, and bias the part in class AB to balance linearity and efficiency. The NI-780L flange with screw-down mounting withstands the mechanical vibration typical of industrial environments better than smaller SMT packages.
Recomendado
UHF Broadcast Translator Amplifier
UHF broadcast translator and on-channel booster stations can use the MRF9135LR3 as the final PA stage in the 865-895 MHz translator band because the part's broadband match and 135 W POUT cover the channel bandwidth without per-channel matching rework. The 17.5 dB gain headroom and 60% drain efficiency allow translator designs to meet regulatory linearity and AC-power constraints with modest heatsinking, while the 26 V rail simplifies power-supply design versus 50 V VDMOS alternatives. The NI-780L flange package is mechanically compatible with standard broadcast amplifier chassis that have used Motorola/Freescale RF power MOSFETs for two decades, enabling direct drop-in upgrades of older translator equipment. Engineers should consult the NXP datasheet's broadband scattering parameters to confirm gain flatness across the specific translator channel before committing the design to production.
Recomendado
Pulsed Radar Driver at 900 MHz ISM
Pulsed-radar and proximity-sensing systems operating in the 900 MHz ISM band can leverage the MRF9135LR3's 135 W pulsed capability as a building block for the final PA stage in short-range radar front ends. The LDMOS device handles the high peak-to-average ratios of pulsed operation, and the broadband internal matching allows one design to cover multiple radar modulation bandwidths without retuning. While GaN HEMTs offer higher pulsed-power density, the MRF9135LR3's lower cost and proven reliability make it attractive for cost-sensitive commercial radar products such as perimeter security, tank-level gauges, and traffic sensors. Designers should observe the datasheet's pulsed-RF derating curves and ensure the heatsink is sized for the average (not peak) dissipation. The NI-780L package supports the screw-down mounting used in outdoor and industrial radar enclosures.
Recomendado
Commercial RF Lighting Driver
Commercial RF-excited lighting sources such as plasma lamps and RF-driven UV curing systems operating in the 900 MHz ISM band can use the MRF9135LR3 as the final PA stage where high CW output power and broadband match are required. The 135 W POUT and 60% drain efficiency reduce the AC-power and cooling burden versus lower-power RF transistors, and the 26 V VDD rail aligns with standard industrial 24-28 V power bus architectures. The NI-780L ceramic flange provides the mechanical rigidity and thermal conductivity needed for continuous operation inside a lighting fixture housing, where the PA typically shares a chassis with RF shielding and a small cooling fan. Designers should validate the EMI compliance of the chosen lamp/load combination, because RF lighting systems are subject to specific unintentional-radiator limits that the PA design must respect.
Recomendado
Professional Radio Repeater Amplifier
Professional two-way radio repeater amplifiers operating in the 900 MHz commercial band can use the MRF9135LR3 as the final PA stage, leveraging its 135 W POUT and broadband match to cover multiple channel assignments with a single hardware design. The 17.5 dB typical gain and 60% drain efficiency support the continuous-duty operation of repeater sites, where thermal management and AC-power cost dominate the lifecycle budget. The 26 V VDD rail is straightforward to derive from station battery systems with standard DC-DC converters, and the NI-780L flange with screw-down mounting is the industry-standard mechanical interface used in repeater cabinets. When designing repeater service, validate the linearity and out-of-band emission performance against the specific radio standard (e.g., MPT 1327, DMR, or P25) because the MRF9135LR3's datasheet is optimized for cellular GSM/EDGE and may require additional filtering for narrow-band repeater service.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRF9135LR3 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRF9135LSR3 | MRF9135L |
|---|---|---|---|
| Package | NI-780L ceramic flange | NI-780L ceramic flange - same | NI-780L ceramic flange - same |
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors (legacy Motorola/Freescale) |
| Operating Frequency | 865-895 MHz (880 MHz typical) | 865-895 MHz - same | 865-895 MHz - same |
| Output Power (POUT) | 135 W typical | 135 W typical - same | 135 W typical - same |
| Power Gain (Gp) | 17.5 dB typical | 17.5 dB typical - same | 17.5 dB typical - same |
| Drain Efficiency | 60% typical | 60% typical - same | 60% typical - same |
| Recommended VDD | 26 V | 26 V - same | 26 V - same |
| Packing Suffix | R3 (tape and reel) | SR3 (tape and reel) | No suffix (tray/tube) |
Principais diferenciais
- Same die as MRF9135LSR3 with R3 packing for screw-down flange assembly (vs MRF9135LSR3)
- Bare die variant without packing suffix for tray/tube assembly (vs MRF9135L)
- NXP/Freescale legacy 880 MHz final-stage benchmark for GSM 900 (vs MRF9130 (lower-power 900 MHz LDMOS))
Notas de projeto
At 26 V VDD with a class-AB quiescent current of approximately 0.5 A, the DC idle dissipation is about 13 W before any RF output is delivered. Estimated: with 60% drain efficiency at 135 W POUT, the total DC input power is about 225 W and the residual dissipation is about 90 W. The NI-780L flange must be mounted to a heatsink sized to keep the flange temperature below 100 C at full CW operation - typically an extruded aluminum heatsink of 0.5-1.0 C/W or a cold-plate interface in base-station chassis. Use thermal compound and follow the torque specification in the datasheet to minimize thermal resistance.
The MRF9135LR3 is a flange-mount device, but the surrounding matching network is realized on a printed circuit board that must use low-loss RF substrate such as Rogers RO4003C or FR4 with controlled-impedance microstrip lines. Place input and output matching networks as close to the gate and drain leads as possible to minimize parasitic inductance, and use a solid ground plane on the bottom layer bonded to the flange ground with multiple vias. Keep the gate bias network isolated from the RF path with a quarter-wave stub or RF choke to prevent bias-circuit resonances from degrading gain flatness. Decouple the 26 V rail at the drain lead with a 10 uF tantalum plus 100 nF ceramic capacitor combination to suppress low-frequency and high-frequency noise.
Estimated: a common design pitfall is driving the MRF9135LR3 directly from a few milliwatts of input - its 17.5 dB gain requires a driver LDMOS such as the MRF9045 to deliver 1-2 W of input power for full 135 W output. Exceeding the +/-20 V VGS rating will destroy the gate oxide instantly, so gate bias should be applied only after the drain supply is stable and sequenced off before the drain. Do not operate above 28 V VDD because long-term reliability degrades rapidly; always observe the datasheet's derating curves for CW vs pulsed operation. Finally, RF power transistors are ESD-sensitive despite their size - use a wrist strap and grounded work surface during board bring-up.
Informações de conformidade
RoHS compliance per NXP product page. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-qualified IC. Halogen-free status not explicitly stated in the verified data; mark as unknown.
