NDT456P - 30V P-Channel MOSFET, 7.5A, SOT-223 | onsemi
N.º da peça: NDT456P ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.51 | $5,10 |
| 100 | $0.38 | $38,00 |
| 500 | $0.29 | $145,00 |
| 1.000 | $0.22 | $220,00 |
| 3.000 | $0.17 | $510,00 |
NDT456P Visão geral
A P-channel enhancement-mode MOSFET is a voltage-controlled transistor that conducts when the gate is pulled below the source (i.e., VGS is negative). P-channel devices simplify high-side load switching because the source can sit at the system rail (e.g., VBAT) and the drain goes to the switched load, eliminating the charge pump required by N-channel high-side switches. In the broader taxonomy, P-FETs belong to power MOSFETs -> MOSFETs -> field-effect transistors -> discrete semiconductors, sitting alongside N-channel MOSFETs, IGBTs, and voltage references.
Key features of the NDT456P include very low on-state resistance (RDS(on) in the tens of mA range when fully enhanced), fast switching transients suitable for PWM signals above 100 kHz, an internal body diode for inductive loads, and a thermally efficient SOT-223 tab that can be soldered to copper pour for additional heatsinking. The device is built on a high-cell-density DMOS process specifically tailored for low RDS(on) and clean switching behavior.
The NDT456P's architecture uses DMOS technology with thousands of parallel cells distributed across the die area, which minimizes conduction losses while maintaining robust avalanche and SOA performance. Logic-level VGS(th) (typically below 2.5 V) means a 3.3 V MCU GPIO can fully enhance the device without external level shifting, a key advantage in battery management and power-rail switching applications.
Typical applications include battery protection and load switching in portable devices, power-rail management in USB peripherals, motor direction or polarity switching, LED backlight and backlight-driver circuits, and high-side OR-ing for redundant supplies. The wide -3.7 V to -30 V drain-source range covers single-cell Li-Ion (-4.2 V) through USB and 12 V rails.
When designing with the NDT456P, drive the gate with a sufficiently low-impedance pull-down (resistor plus optional gate-driver) to ensure fast switching and immunity to dv/dt-induced turn-on. The SOT-223 tab should be soldered to a copper pour sized to keep the junction temperature below 150C at the worst-case continuous load current. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet.
Alternativas drop-in para NDT456P — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NDT454P
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NDT2955
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
Si2333DDS
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
DMP3098L
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSS84PW
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NDT456P Classificações máximas e características elétricas
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) | -7.5 A (TA=25C) |
| Power Dissipation (PD) | 3 W (TA=25C) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Temperatura de junção de operação | -55C to +150C |
| Encapsulamento | SOT-223-4 |
| Tipo de montagem | Surface Mount |
| Technology | Enhancement-mode DMOS |
| Body Diode | Internal (intrinsic to MOSFET) |
| Nível MSL | 1 |
| Status RoHS | Compliant |
| Lead-Free Finish | Yes (per onsemi datasheet) |
Configuração de pinos do NDT456P
| Pino 1 | Gate — P-channel gate control input |
| Pino 2 | Drain — Drain (electrically tied to thermal tab) |
| Pino 3 | Source — Source (connected to system rail) |
| Pino 4 | Source — Source (connected to system rail) |
Área de Operação Segura - NDT456P
Aplicações típicas
NDT456P é adequado para 6 aplicaçãos: Battery Protection Load Switch, USB VBUS Power Switch, DC Motor Polarity Switch, High-Side Power Rail Management, LED Backlight Driver Switch, OR-ing Diode Replacement for Redundant Supplies.
Battery Protection Load Switch
The NDT456P's -30 V VDS rating exceeds single-cell Li-Ion maximums (-4.2 V) and its logic-level VGS(th) below 2.5 V allows direct drive from a 3.3 V battery-management MCU GPIO without a gate-driver stage. Placed between VBAT and the load, the device disconnects via gate pull-up to VBAT. Its 7.5 A continuous ID supports peak load currents up to typical fast-charge profiles, and the SOT-223 tab dissipates up to 3 W when soldered to a small copper pour. Unlike mechanical relays, the NDT456P switches silently and has no mechanical wear, making it ideal for portable electronics battery management.
Recomendado
USB VBUS Power Switch
The NDT456P serves as a high-side P-channel load switch between a 5 V USB VBUS rail and downstream circuitry. Its -30 V VDS comfortably exceeds the 5 V bus, and its low RDS(on) minimizes voltage drop and conduction loss. Driven by an MCU GPIO via a pull-up resistor, the device enables or disables VBUS to USB peripherals with built-in ESD tolerance and reverse-current blocking via the internal body diode. The SOT-223 footprint is compatible with standard USB switch layouts, allowing reuse of existing PCB pads.
Recomendado
DC Motor Polarity Switch
Two NDT456P devices in a back-to-back P-channel half-bridge can reverse DC motor polarity without mechanical relays. Each NDT22050P handles -30 V and up to 7.5 A, supporting motors drawing several amps continuous. Logic-level gates driven by an MCU H-bridge control logic enable quiet, wear-free polarity switching. The SOT-223 tab dissipates conduction losses during motor start-up transients, and the internal body diodes provide free-wheeling paths for inductive kickback during commutation.
Recomendado
High-Side Power Rail Management
The NDT456P can sequence power-rail connections in multi-rail systems by serving as a high-side P-FET switch between intermediate rails. Its -30 V rating accommodates 12 V and lower bus voltages, and its logic-level gate allows direct MCU GPIO control without gate drivers. The device's low RDS(on) minimizes voltage drop on the rail it switches, and the SOT-223 tab handles thermal dissipation when switching high inrush loads like downstream DC-DC converters or hot-plug cards. Designers can stack multiple NDT22050P devices for sequenced power-up of subsystems.
Recomendado
LED Backlight Driver Switch
The NDT456P can switch DC-DC or several DC-DC converters feeding LED backlight strings in displays, acting as a high-side P-FET enable switch. Its logic-level gate allows direct control from the display controller or backlight driver IC, and its -30 V rating covers standard LED backlight supply rails (12-24 V typical). The SOT-223 tab dissipates the modest heat generated during switching, and the internal body diode provides inductive kickback protection when the LED string inductance generates voltage transients during turn-off.
Recomendado
OR-ing Diode Replacement for Redundant Supplies
Two NDT456P devices configured as OR-ing switches can replace power diodes in redundant-supply applications, dramatically reducing conduction losses. Each P-FET conducts from source to drain via the channel (RDS(on) < diode Vfwd), and reverse current is blocked by the gate-source voltage. The NDT22050P's -30 V VDS and 7.5 A ID cover typical 12 V redundant power configurations, and the SOT-223 footprint fits standard TO-220 OR-ing diode land patterns with no PCB rework.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NDT456P — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NDT454P | NDT2955 | Si2333DDS | DMP3098L | BSS84PW |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Infineon |
| Package | SOT-223-4 | SOT-223-4 (same) | SOT-223-4 (same) | SOT-223-4 (same) | SOT-223-4 (same) | SOT-223-4 (same) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS Max | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous ID (TA=25C) | -7.5 A | -5.4 A | -7.5 A | -6 A | -4.6 A | -3.2 A |
| Power Dissipation (TA=25C) | 3 W | 3 W | 3 W | 2.5 W | 2 W | 1.7 W |
| Logic-Level Gate (VGS(th) < 2.5V) | Yes | Yes | Yes | Yes | Yes | Yes |
| Mounting Type | Surface Mount (SOT-223) | Surface Mount (SOT-223) | Surface Mount (SOT-223) | Surface Mount (SOT-223) | Surface Mount (SOT-223) | Surface Mount (SOT-223) |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Higher continuous drain current than NDT454P (vs NDT454P)
- Same-form-factor drop-in across multiple brands (vs Si2333DDS (Vishay))
- Higher current than Infineon BSS84PW alternative (vs BSS84PW (Infineon))
Notas de projeto
Estimated: at VDS=-10V, ID=-5A continuous, conduction loss is P = ID^2 x RDS(on). With RDS(on) ~50 mOhm at full VGS enhancement, dissipation is ~1.25W. SOT-223 theta_JC is typically 15C/W, so junction rise above tab is ~19C, well within the 150C limit. Ensure the SOT-223 tab is soldered to at least 50 sq mm of 2 oz copper pour to keep tab-to-ambient rise modest.
The SOT-223 thermal tab is internally connected to the drain (pin 2 in the datasheet's pinout convention). Solder the tab directly to a copper pour sized for the load current - this serves both as electrical drain connection and as the primary heatsinking path. Do not use thermal vias alone; direct solder connection to copper is required for full thermal performance.
Do not float the gate of a P-channel MOSFET. A floating gate can charge via the drain-gate Miller capacitance during dV/dt transients, causing the device to partially turn on and dissipate excessive power. Always provide a gate pull-up resistor (typically 10k to 100k) tied to the source, OR actively drive the gate from an MCU GPIO. Ensure VGS never exceeds +/-20V maximum rating.
Keep the gate trace short and away from the drain switching node to minimize parasitic gate-drain coupling. A gate series resistor of 10-100 ohm can slow turn-on/turn-off edges if needed to control ringing or EMI. Place a small (1-10 nF) gate-source capacitor if the gate drive is high-impedance, to prevent dv/dt-induced turn-on during fast drain transients.
For PWM-switched load applications above 100 kHz, the NDT456P's switching losses become significant. Estimated: at 200 kHz with 10V VDS swing, switching loss is approximately 0.5 x VDS x Qg x fsw. With Qg ~20 nC typical, switching loss is ~20 mW at 200 kHz - acceptable. Above 500 kHz, consider a dedicated gate driver to fully enhance the device within the switching period.
Informações de conformidade
RoHS and lead-free per onsemi NDT456P datasheet. Not AEC-Q100 qualified (consumer/industrial grade). HAC: contains no halogens per onsemi standard datasheet practice; halogen_free: confirm on individual lot certificate.
