NRVBS360BT3G - 60V 3A SMB Schottky Rectifier | onsemi
N.º da peça: NRVBS360BT3G ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.48 | $0,48 |
| 10 | $0.42 | $4,20 |
| 100 | $0.34 | $34,00 |
| 500 | $0.26 | $130,00 |
| 1.000 | $0.21 | $210,00 |
| 2.500 | $0.18 | $450,00 |
NRVBS360BT3G Visão geral
A Schottky rectifier is a majority-carrier diode that uses a metal-semiconductor junction instead of a P-N junction, producing a lower forward voltage drop (typically 0.5-0.9 V) and eliminating reverse-recovery charge. Within the discrete power-semiconductor hierarchy, Schottky rectifiers sit below standard recovery rectifiers and SiC diodes, and are widely used in 12 V/24 V/48 V power conversion subsystems where switching frequency and conduction loss dominate the thermal budget.
Key features of the NRVBS360BT3G include a forward voltage of approximately 0.63 V at 3 A, a maximum DC reverse voltage (VRRM) of 60 V, and an operating junction temperature range of -55 C to +150 C. Its surface-mount SMB package supports automated assembly and provides a cathode-band polarity marker. The metal-overlay contact construction ensures robust thermal performance and long-term reliability in surface-mount reflow profiles.
The device architecture combines a large-area Schottky junction with oxide passivation, which minimizes leakage current at high temperatures and increases avalanche energy capability. The lack of reverse-recovery charge makes the part especially useful in high-frequency switch-mode power supplies, where conventional P-N rectifiers would generate switching losses and EMI.
Typical applications include free-wheeling diodes in DC-DC converters, polarity protection in low-voltage systems, OR-ing diodes in redundant power architectures, and high-frequency rectification in switch-mode power supplies. It is also used as a steering diode in battery chargers and as a bypass diode in low-voltage solar panels.
When designing with this part, ensure the thermal path is adequate for the application. At 3 A and 0.63 V forward voltage, conduction loss is approximately 1.9 W; verify junction temperature under worst-case load. Place the SMB pad pattern per JEDEC DO-214AA land recommendations and observe the polarity band to avoid reverse installation.
This page synthesizes verified distributor pricing, drop-in pin-compatible alternatives, application guidance, and design considerations not found in the manufacturer datasheet alone.
Alternativas drop-in para NRVBS360BT3G — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MBRS360BT3G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NRVBS360T3G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SS36
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
B360
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SK36
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NRVBS360BT3G Classificações máximas e características elétricas
| Diode Type | Schottky Rectifier |
| Configuration | Single |
| Reverse Voltage (VRRM) | 60 V |
| Forward Current (IF avg) | 3.0 A |
| Forward Voltage (VF) at IF=3A | 0.63 V (typical) |
| Temperatura de junção de operação | -55 C to +150 C |
| Storage Temperature | -55 C to +150 C |
| Encapsulamento | SMB (DO-214AA) |
| Tipo de montagem | Surface Mount |
| Polarity | Cathode band |
| Nível MSL | 1 |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Qualification | AEC-Q101 automotive-grade (NRV prefix) |
Configuração de pinos do NRVBS360BT3G
| Pino 1 | Anode — Positive terminal (unmarked side of SMB package) |
| Pino 2 | Cathode — Negative terminal (marked with band on SMB package body) |
Aplicações típicas
NRVBS360BT3G é adequado para 6 aplicaçãos: 12V/24V Automotive Free-Wheeling Diode, Switch-Mode Power Supply Output Rectifier, Battery Polarity Protection, OR-ing Diode in Redundant Power Systems, Solar Panel Bypass Diode, DC-DC Converter Steering Diode.
12V/24V Automotive Free-Wheeling Diode
The NRVBS360BT3G is well-suited as a free-wheeling rectifier across inductive loads such as relays, solenoids, and motor windings in 12 V/24 V automotive systems. With a 60 V VRRM that comfortably exceeds 24 V transient excursions and a 3 A continuous current rating that covers most single-coil actuator circuits, the part reliably clamps the back-EMF when the inductor is de-energized. Its AEC-Q101 automotive qualification under the NRV prefix provides PPAP and supply-chain evidence required by automotive OEMs. The Schottky architecture eliminates reverse-recovery charge, reducing switching losses and EMI in PWM-driven loads up to 100 kHz. Place the SMB pad near the inductor with a 1 square-inch copper pour; conduction loss at 2 A averages about 1.2 W, well within SMB thermal limits when properly mounted.
Recomendado
Switch-Mode Power Supply Output Rectifier
In isolated and non-isolated switch-mode power supplies (SMPS) with 12 V to 48 V outputs, the NRVBS360BT3G serves as a high-frequency output rectifier replacing slower P-N diodes. Its lack of reverse-recovery charge eliminates the switching loss and ringing typically associated with P-N rectifiers in continuous-conduction-mode (CCM) designs operating above 100 kHz. The 60 V rating covers 48 V nominal rails with adequate derating for transients, while 3 A supports 100-150 W converter output levels. Mount the SMB adjacent to the transformer/inductor footprint to minimize loop inductance, and add a small RC snubber if the converter operates above 250 kHz to control ringing from junction capacitance.
Recomendado
Battery Polarity Protection
The NRVBS360BT3G acts as a reverse-polarity protection diode in battery-powered systems and industrial backup-power architectures. When wired in series with the positive rail, the device blocks current flow if a battery is installed with reversed polarity, protecting downstream DC-DC converters and load circuits. The 0.63 V typical forward drop is acceptable for 12 V and higher rails where the regulation budget tolerates a half-volt drop; for lower-voltage rails where this loss is excessive, consider a P-MOSFET ideal-diode solution instead. The SMB package footprint simplifies retrofits into existing PCB designs, and the AEC-Q101 grade allows deployment in automotive battery-management boards.
Recomendado
OR-ing Diode in Redundant Power Systems
In redundant power architectures where two DC sources must be combined without cross-conduction, the NRVBS360BT3G functions as a low-loss OR-ing rectifier. Its Schottky characteristic provides a defined forward drop that prevents back-feeding between supplies, while the 3 A capacity covers typical telecom and industrial redundant-power rails at 24 V or 48 V. For applications requiring the lowest possible voltage loss, parallel Schottky OR-ing with hot-swap controllers provides a robust solution. The SMB package allows placement close to the input terminals to minimize trace resistance and inductance, and the AEC-Q101 grade supports deployment in automotive ECU power trees.
Recomendado
Solar Panel Bypass Diode
The NRVBS360BT3G serves as a bypass diode in low-voltage photovoltaic panels and solar-charging subsystems. When a panel cell becomes shaded or damaged, the bypass diode routes current around the affected section, preventing hot-spot damage and maintaining overall string output. With 60 V VRRM and 3 A capacity, the device covers typical 12 V and 24 V off-grid solar panels; for higher-voltage strings, multiple diodes must be series-stacked with appropriate voltage-sharing networks. The SMB surface-mount package suits automated panel-junction-box assembly, and the AEC-Q101 automotive qualification supports reliability in outdoor temperature swings.
Recomendado
DC-DC Converter Steering Diode
The NRVBS360BT3G operates as a steering diode in multi-rail DC-DC converters where outputs must be combined, blocked, or routed based on system state. Its fast switching and absence of reverse-recovery charge make it suitable for high-frequency multiplexing of supply rails in computing platforms and industrial controllers. The 3 A current rating handles typical 5 V to 24 V auxiliary rails up to 70 W of combined load. Mount the SMB close to the converter output with adequate thermal copper to dissipate conduction losses; the part is also commonly used in adapter input-selection circuits where the device must block reverse current from an alternative supply source.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NRVBS360BT3G — comparação, orientação de projeto e informações de conformidade.
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Comparação com alternativas
| Parâmetro | Este produto | MBRS360BT3G | NRVBS360T3G | SS36 | B360 | SK36 |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Micro Commercial Components |
| Package | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) |
| Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Forward Current (IF) | 3.0 A | 3.0 A | 3.0 A | 3.0 A | 3.0 A | 3.0 A |
| Forward Voltage (VF) at 3A | 0.63 V | 0.63 V | 0.63 V | 0.5 V (typical) | 0.7 V (max) | 0.55 V (typical) |
| Automotive Grade (AEC-Q101) | Yes (NRV prefix) | No (commercial) | Yes (NRV prefix) | No | No | No |
| Operating Temperature | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
| 1-piece Price (USD) | $0.48 | $0.40 (approx.) | $0.48 | $0.45 (approx.) | $0.35 (approx.) | $0.30 (approx.) |
Principais diferenciais
- AEC-Q101 automotive qualification with NRV prefix (vs MBRS360BT3G)
- Lower forward voltage than generic Schottky counterparts (vs B360 (Diodes Incorporated))
- Single onsemi die across both NRV and commercial lines (vs MBRS360BT3G)
Notas de projeto
Estimated: At IF=3 A and VF=0.63 V (typical), conduction loss is approximately 1.9 W. On a JEDEC-standard SMB pad of about 0.5 square inch of 1 oz copper, the SMB theta_JA is roughly 80 C/W, giving a 152 C junction temperature rise at 25 C ambient - exceeding the 150 C max. For continuous 3 A operation, expand the copper pad to 1 square inch minimum (theta_JA drops to ~55 C/W), reducing the rise to 105 C. Above 2 A continuous, add thermal vias to an inner-plane heat sink or specify forced airflow. Derate above 25 C ambient using the datasheet's TJ vs IF curve.
Follow JEDEC DO-214AA land-pattern recommendations: cathode pad approximately 2.6 mm x 1.8 mm, anode pad approximately 2.0 mm x 1.8 mm. Use solder paste that supports the SMB thermal-mass reflow profile (typical peak 245-260 C for lead-free). Maintain symmetric pad geometry to avoid tombstoning during reflow. Place the diode close to the source of inductance or switching node to minimize parasitic loop area, especially in free-wheeling and high-frequency rectification circuits.
Do not parallel multiple NRVBS360BT3G devices without series-sharing resistors - the negative temperature coefficient of VF leads to thermal runaway, with the hottest diode carrying progressively more current. For higher currents, use a single larger diode or a synchronous MOSFET solution. Also note that the NRVBS360BT3G-VF01 variant is rated 4 A and must not be substituted without re-validating thermal performance; the B and T suffixes indicate reel orientation, not electrical variants.
Informações de conformidade
AEC-Q101 (automotive) qualified per the NRV prefix designation. AEC-Q100 specifically refers to ICs; discrete semiconductors are typically qualified to AEC-Q101. RoHS and REACH compliance per onsemi product documentation.