NVT4558HKX - SIM Card Level Translator 10-XQFN | NXP
N.º da peça: NVT4558HKX ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.02 | $1,02 |
| 10 | $0.95 | $9,50 |
| 100 | $0.82 | $82,00 |
| 500 | $0.71 | $355,00 |
| 1.000 | $0.63 | $630,00 |
NVT4558HKX Visão geral
A level translator (also called a voltage level shifter or logic translator) is a type of interface IC within the broader logic IC family that converts digital signals between circuits operating at different supply voltages. In modern mobile and IoT systems, low-voltage baseband processors (1.2 V to 1.8 V) must communicate with SIM/UICC cards that may run at 1.8 V or 3 V class voltages (up to 3.6 V). Without translation, direct connection risks overvoltage damage or unreliable logic thresholds. The NVT4558HK family solves this in a single, protection-integrated device.
Key differentiating features include integrated ESD protection on all card-side pins rated to 8 kV contact discharge per IEC 61000-4-2, integrated EMI filtering that suppresses higher harmonics of the digital I/O signals (important for passing regulatory EMC testing in cellular devices), and a bidirectional translation architecture with a 10 MHz data rate that comfortably covers the ISO 7816-compatible clock rates used by 3GPP SIM interfaces.
Architecturally, the device combines automatic direction-sensing translation channels for the SIM data line with supply-domain isolation between the host side (1.2 V to 1.8 V) and card side (1.8 V to 3.6 V). The integration of the EMI filter and ESD structures into the same die eliminates discrete TVS diodes and filter components, reducing BOM count and PCB area in space-constrained designs such as smartphones, cellular modules, and M2M terminals.
Typical applications include SIM card interfaces in 4G/5G cellular modems, eUICC/SIM sockets in IoT trackers, telematics control units, and payment terminals, all of which require reliable low-voltage to card-voltage translation with robust ESD immunity at the externally accessible card contacts.
Design consideration: keep the card-side traces short and place the device close to the SIM connector so the integrated EMI filter and ESD structures provide maximum benefit; verify that the host-side supply stays within the 1.2 V to 1.8 V range for correct logic thresholds.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para NVT4558HKX — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NVT4558HK
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NVT4558HKX Especificações
| Função | SIM card interface level translator with EMI filter and ESD protection |
| Translation Type | Bidirectional |
| Number of Circuits / Channels | 1 circuit |
| Maximum Data Rate | 10 MHz |
| Host-Side Supply Voltage | 1.2 V to 1.8 V |
| Card-Side Supply Voltage | 1.8 V to 3.6 V |
| ESD Protection (Card Side) | 8 kV contact discharge per IEC 61000-4-2 |
| EMI Filtering | Integrated, suppresses higher harmonics of digital I/Os |
| Faixa de temperatura de operação | -40 C to +85 C |
| Encapsulamento | 10-XQFN (1.4 mm x 1.8 mm) |
| Terminal Form | No lead (VQCCN, LCC10,.05X0.07,16) |
| Tipo de montagem | Surface Mount |
| Packaging | Reel 7 in Q1/T1 NDP, 4000 units per reel |
| Application Domain | SIM card interface in cellular devices |
Guia de Configuração de Pinos do NVT4558HKX 10-xqfn (1.4 mm x 1.8 mm)
Configuração de pinos para NVT4558HKX (pacote 10-xqfn (1.4 mm x 1.8 mm)). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para NVT4558HKX.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
NVT4558HKX é adequado para 6 aplicaçãos: 4G/5G Cellular Module SIM Interface, IoT Trackers and M2M Terminals, Smartphones and Wearable Devices, Payment Terminals and POS Systems, Automotive Telematics Control Units, Test and Measurement SIM Card Emulation Fixtures.
4G/5G Cellular Module SIM Interface
The NVT4558HKX fits cellular module SIM interfaces because its host-side 1.2 V to 1.8 V range matches modern baseband GPIO rails while its card-side 1.8 V to 3.6 V range supports both 1.8 V-class and 3 V-class SIM/UICC cards automatically. The 10 MHz bidirectional translation comfortably exceeds ISO 7816-derived SIM clock rates used in 3GPP terminals, so it never limits data throughput. Because SIM contacts are user-accessible, the integrated 8 kV contact ESD protection (IEC 61000-4-2) on all card-side pins is a decisive advantage - it replaces discrete TVS diodes and improves immunity test margins. The integrated EMI filter further suppresses clock harmonics radiating from the SIM traces, easing radiated-emissions compliance in module certification. Place the device close to the SIM connector for best filtering and ESD performance.
Recomendado
IoT Trackers and M2M Terminals
Battery-powered IoT trackers and M2M terminals benefit from the NVT4558HKX because the 10-pin XQFN package (1.4 mm x 1.8 mm) consumes minimal PCB area next to a push-pull or mini-SIM socket, and the device integrates translation, ESD, and EMI functions that would otherwise require three separate components. The card-side 1.8 V to 3.6 V range lets the same design accept both modern 1.8 V SIMs and legacy 3 V cards without hardware changes, simplifying inventory. The bidirectional 10 MHz channel handles SIM data exchange with the cellular modem, while the on-die EMI filter reduces harmonic radiation in cost-sensitive, antenna-dense tracker layouts. Low component count also improves field reliability for devices deployed for years without maintenance access.
Recomendado
Smartphones and Wearable Devices
In smartphones and wearables, board space around the SIM tray or eUICC socket is extremely constrained, making the 1.4 mm x 1.8 mm XQFN footprint of the NVT4558HKX a strong fit. The host-side 1.2 V to 1.8 V supply directly matches the core-adjacent I/O rails of modern application processors and modems, while the card-side 1.8 V to 3.6 V range covers all standard SIM card classes. The integrated EMI filter suppresses the higher harmonics of SIM clock edges that would otherwise couple into nearby RF and display circuitry, and the 8 kV IEC 61000-4-2 contact ESD rating on card-side pins protects against user-induced discharge at the SIM tray - a common failure point. Short, direct routing from translator to SIM contacts maximizes filter effectiveness.
Recomendado
Payment Terminals and POS Systems
Payment terminals expose a SAM/SIM card interface to operators and must survive harsh electrostatic environments, making the NVT4558HKX integrated ESD protection (8 kV contact per IEC 61000-4-2) a key selection argument. The translator bridges the 1.2 V to 1.8 V secure-processor domain to 1.8 V to 3.6 V SAM/SIM cards, and the 10 MHz bidirectional channel supports standard card communication speeds used during transaction authentication. The integrated EMI filter helps the terminal meet EMC regulatory requirements for retail electronics without external filter networks. The -40 C to +85 C operating range accommodates outdoor and vehicle-mounted POS installations, and the small XQFN footprint fits the dense PCBs typical of handheld payment devices.
Recomendado
Automotive Telematics Control Units
Telematics control units (TCUs) in vehicles use cellular connectivity with a SIM (often in M2M form factor) that must be interfaced to a low-voltage host processor. The NVT4558HKX translates between the 1.2 V to 1.8 V modem/controller domain and the 1.8 V to 3.6 V card domain, while its -40 C to +85 C ambient rating matches automotive cabin and equipment environments. The integrated ESD structures protect the SIM contacts against handling discharge during maintenance card swaps, and the EMI filter keeps SIM clock harmonics from interfering with sensitive vehicle communication buses and RF receivers in the densely populated TCU board. The compact XQFN package suits the multilayer, space-limited layouts typical of automotive connectivity modules.
Recomendado
Test and Measurement SIM Card Emulation Fixtures
SIM card test fixtures and production programmers use level translators to interface low-voltage test controllers with cards spanning multiple supply classes. The NVT4558HKX supports 1.8 V to 3.6 V card-side operation and 1.2 V to 1.8 V controller-side operation, letting one fixture design service both 1.8 V-class and 3 V-class cards without rework. The 10 MHz bidirectional channel covers all standard SIM clocking used in personalization and testing, and the integrated EMI filter produces clean signal edges on scope traces, simplifying signal-integrity validation. On-die ESD protection (8 kV contact per IEC 61000-4-2) protects the fixture when operators repeatedly insert and remove cards, improving long-term reliability of production-line equipment.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NVT4558HKX — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NVT4558HK |
|---|---|---|
| Package | 10-XQFN (1.4 mm x 1.8 mm) | 10-XQFN (1.4 mm x 1.8 mm) - same |
| Brand | NXP Semiconductors | NXP Semiconductors |
| Host-Side Voltage Range | 1.2 V to 1.8 V | 1.2 V to 1.8 V |
| Card-Side Voltage Range | 1.8 V to 3.6 V | 1.8 V to 3.6 V |
| Max Data Rate | 10 MHz | 10 MHz |
| ESD Protection (Card Side) | 8 kV contact (IEC 61000-4-2) | 8 kV contact (IEC 61000-4-2) |
| Integrated EMI Filter | Yes | Yes |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C |
Principais diferenciais
- Integrated EMI filtering on SIM I/O lines (vs Generic discrete level-shifter solutions)
- 8 kV contact ESD protection integrated on all card-side pins (vs Generic translator ICs without integrated protection)
- Extremely small XQFN footprint (vs Competing SIM-interface protection ICs in larger packages)
Notas de projeto
Place the NVT4558HKX as close as possible to the SIM card connector so that all card-side traces are short. Short traces reduce the loop area that the integrated EMI filter must treat and improve the effectiveness of the 8 kV IEC 61000-4-2 on-die ESD structures, since every millimeter of trace before the device adds unprotected, radiating copper. Keep the SIM clock line away from RF antennas and other sensitive analog routing in mobile layouts.
Provide clean, well-decoupled supplies on both voltage domains: the host side must stay within 1.2 V to 1.8 V and the card side within 1.8 V to 3.6 V per the NXP NVT4558 datasheet. Use local 100 nF ceramic decoupling on each supply pin and verify that the card-side supply can source the SIM card's peak current during authentication operations without drooping below 1.8 V, which would cause communication faults.
Do not exceed the 10 MHz maximum data rate: SIM clock rates are usually well below this, but custom high-speed card emulation fixtures can exceed it, causing undefined output levels. Also verify that your host controller's I/O thresholds are specified at the actual host-side rail used - the 1.2 V to 1.8 V range is wide, and marginal threshold matching at 1.2 V operation is the most common integration error reported for low-voltage translator interfaces.
Informações de conformidade
Compliance data not present in the provided verified web data. ESD rating cited (8 kV contact per IEC 61000-4-2) is a performance specification, not an environmental compliance statement.
