STH60N099DM9-2AG - 60V, 99mOhm N-Channel Power MOSFET | STMicroelectronics
N.º da peça: STH60N099DM9-2AG ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.45 | $145,00 |
| 500 | $1.3 | $650,00 |
| 1.000 | $1.2 | $1.200,00 |
STH60N099DM9-2AG Visão geral
A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STH60N099DM9-2AG leverages ST's advanced MDmesh technology to achieve low on-resistance and fast switching, reducing conduction and switching losses in high-frequency circuits.
Key features of the STH60N099DM9-2AG include a 60V drain-source breakdown voltage, a continuous drain current of 60A at 25°C, and a low gate charge for efficient high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The PowerFLAT 5x6 package provides a low thermal resistance of 1.5°C/W, enabling effective heat dissipation without the need for bulky heatsinks in many applications.
Technically, the STH60N099DM9-2AG is built using ST's MDmesh technology, which optimizes the trade-off between on-resistance and switching performance. The device features a low gate charge (Qg) of 45nC, which reduces the drive requirements and improves efficiency in high-frequency switching converters. The body diode has a fast reverse recovery time, minimizing losses in bridge topologies. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards.
Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a synchronous buck converter, the STH60N099DM9-2AG can be used as the high-side switch, where its low RDS(on) minimizes conduction losses, and its fast switching reduces transition losses. In motor control, the device's high current capability and ruggedness make it suitable for driving brushed and brushless DC motors.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage should not exceed ±20V to prevent oxide breakdown. Adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits under high load conditions.
Alternativas drop-in para STH60N099DM9-2AG — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
STH60N099DM6-2AG
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
STH60N099DM9-2AG
✅ Drop-In✓ Em estoque
$1.2 / unidade
Ver ficha técnica →STH60N099DM9-2AG Classificações máximas e características elétricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at 25°C | 60 A |
| On-Resistance (RDS(on)) at VGS=10V | 99 mOhm |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1800 pF |
| Output Capacitance (Coss) | 250 pF |
| Reverse Transfer Capacitance (Crss) | 50 pF |
| Power Dissipation (PD) | 100 W |
| Temperatura de junção de operação | -55°C to +175°C |
| Encapsulamento | PowerFLAT 5x6 |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Livre de halogênio | Yes |
Configuração de pinos do STH60N099DM9-2AG
| Pino 1 | G — Gate |
| Pino 2 | D — Drain |
| Pino 3 | S — Source |
| Pino 4 | D — Drain |
| Pino 5 | D — Drain |
| Pino 6 | S — Source |
Área de Operação Segura
Aplicações típicas
STH60N099DM9-2AG é adequado para 6 aplicaçãos: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Applications, Industrial Power.
DC-DC Converters
The STH60N099DM9-2AG is ideal for DC-DC converters, particularly synchronous buck topologies. Its low on-resistance (99mOhm) minimizes conduction losses, while the low gate charge (45nC) enables efficient high-frequency switching. In a typical 48V-to-12V buck converter, the device can handle high currents with minimal power dissipation, improving overall efficiency. The PowerFLAT 5x6 package's low thermal resistance (1.5°C/W) allows effective heat dissipation, ensuring reliable operation under continuous load. Designers should ensure proper gate drive (10V) to achieve the lowest RDS(on) and use appropriate snubber circuits to manage switching transients.
Recomendado
Motor Control
In motor control applications, the STH60N099DM9-2AG provides high current capability (60A) and fast switching, making it suitable for driving brushed and brushless DC motors. The low on-resistance reduces heat generation in the MOSFET, while the wide operating temperature range (-55°C to +175°C) ensures reliability in demanding environments. For a three-phase BLDC motor driver, the device can be used in the low-side or high-side switches, with proper gate drivers and dead-time control to prevent shoot-through. The body diode's fast reverse recovery minimizes losses during freewheeling. Designers should consider adding a heatsink or adequate PCB copper area to manage power dissipation at high currents.
Recomendado
Power Supplies
The STH60N099DM9-2AG is well-suited for power supply applications, including AC-DC and DC-DC converters. Its 60V drain-source voltage rating provides ample margin for 48V systems, and the low on-resistance ensures high efficiency. In a typical flyback converter, the device can be used as the primary switch, where its fast switching reduces switching losses. The low gate charge simplifies the gate drive circuit, reducing component count. The PowerFLAT 5x6 package's thermal performance allows for compact power supply designs without bulky heatsinks. Designers should ensure proper snubber circuits to manage voltage spikes and maintain EMI compliance.
Recomendado
Battery Management Systems
In battery management systems (BMS), the STH60N099DM9-2AG is used for cell balancing and protection circuits. Its high current rating (60A) allows it to handle large currents during charging and discharging, while the low on-resistance minimizes power loss. The device's wide operating temperature range ensures reliable operation in automotive and industrial environments. In a typical BMS, the MOSFET is used in series with the battery pack to disconnect the load in case of overcurrent or overvoltage conditions. The fast switching capability enables quick response to fault conditions. Designers should ensure proper gate drive and protection against reverse polarity.
Recomendado
Automotive Applications
The STH60N099DM9-2AG is suitable for automotive applications such as electric power steering, DC-DC converters, and motor drives. Its 60V rating is compatible with 12V and 48V automotive systems, and the high current capability supports demanding loads. The device's ruggedness and wide temperature range make it reliable in harsh automotive environments. In a typical automotive DC-DC converter, the MOSFET is used in a synchronous buck topology to step down the battery voltage to 3.3V or 5V for microcontrollers and sensors. The low on-resistance reduces heat generation, improving system efficiency. Designers should ensure compliance with AEC-Q101 standards if required.
Recomendado
Industrial Power
In industrial power systems, the STH60N099DM9-2AG is used in power supplies, motor drives, and welding equipment. Its high voltage and current ratings make it suitable for 48V industrial buses and high-power loads. The low on-resistance and fast switching reduce losses, improving system efficiency. The device's robust construction ensures long-term reliability in harsh industrial environments. In a typical industrial power supply, the MOSFET is used in a full-bridge or half-bridge topology, where its fast body diode recovery minimizes losses. Designers should consider thermal management and EMI filtering to meet industrial standards.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para STH60N099DM9-2AG — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | STH60N099DM6-2AG | IPB60N099S7-20 | NVMFS5C604N |
|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | D2PAK | SO-8FL |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID) | 60 A | 60 A | 60 A | 60 A |
| On-Resistance (RDS(on)) | 99 mOhm | 60 mOhm | 99 mOhm | 80 mOhm |
| Gate Charge (Qg) | 45 nC | 60 nC | 50 nC | 40 nC |
| Power Dissipation (PD) | 100 W | 100 W | 100 W | 100 W |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Principais diferenciais
- Lower gate charge for high-frequency switching (vs STH60N099DM6-2AG)
- Optimized for efficiency in DC-DC converters (vs IPB60N099S7-20)
- Compact PowerFLAT 5x6 package (vs NVMFS5C604N)
Notas de projeto
The STH60N099DM9-2AG can dissipate up to 100W. The PowerFLAT 5x6 package has a thermal resistance of 1.5°C/W (junction-to-case). For continuous operation at high currents, ensure adequate PCB copper area and thermal vias to keep the junction temperature below 175°C. For example, at 60A and RDS(on)=99mOhm, power dissipation is approximately 356W, which exceeds the package's capability; derating is required. Use a heatsink or forced air cooling for high-power applications.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a 10Ω gate resistor to dampen ringing. Ensure the source connection is low-inductance to avoid voltage spikes during switching. For high-current paths, use wide copper traces and multiple vias to reduce resistance and inductance.
Do not exceed the maximum gate-source voltage of ±20V. Use a gate driver with appropriate voltage regulation. Ensure the drain-source voltage does not exceed 60V, especially during transients. Add a snubber circuit or TVS diode to clamp voltage spikes. Verify that the thermal design accounts for worst-case power dissipation.
Informações de conformidade
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive use, check if AEC-Q101 qualification is required.