SUM60061EL-GE3 - 80V 150A P-Channel TrenchFET MOSFET | Vishay
N.º da peça: SUM60061EL-GE3 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.92 | $8,92 |
| 10 | $7.95 | $79,50 |
| 100 | $6.78 | $678,00 |
| 500 | $5.84 | $2.920,00 |
| 1.000 | $5.21 | $5.210,00 |
SUM60061EL-GE3 Visão geral
A P-channel MOSFET (PMOS) is a majority-carrier field-effect transistor whose channel is composed of p-type carriers (holes). PMOS devices simplify high-side switching circuits because they turn ON when the gate is pulled below the source, eliminating the need for a bootstrap or charge-pump circuit that N-channel high-side switches typically require. The SUM6xxxx family falls under the broader hierarchy of: P-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key features of the SUM60061EL-GE3 include an extremely low typical on-resistance (RDS(on)) in the single-digit milliohm range at VGS = -10 V, fast switching, and 100% Rg and UIS (unclamped inductive switching) tested for avalanche ruggedness. The TO-263 (D2PAK) surface-mount package exposes a large metal tab for direct PCB heatsinking, enabling continuous high-current operation on FR-4 boards with proper copper-pour design.
The SUM60061EL-GE3 uses Vishay's proprietary TrenchFET silicon technology, which etches vertical trenches into the silicon die to dramatically increase channel density per unit area. This produces lower RDS(on) per die size than planar MOSFETs, reducing conduction losses and improving thermal performance in compact surface-mount designs.
Typical applications include power-OR-ing in redundant supply systems, battery protection and load switching in 48 V telecom rails, motor-drive reverse-battery protection, eMobility and forklift controllers, hot-swap circuits on server backplanes, and synchronous-rectifier secondary-side switching in industrial SMPS. Designers favor it when a logic-level P-channel high-side switch must drop minimal voltage at high current.
When designing with this device, ensure VGS(th) is exceeded by a healthy margin at logic high levels, and provide adequate copper-pour area on the TO-263 tab to keep junction temperature below 175 C. Because P-channel MOSFETs carry current through the body diode during dead-time in half-bridge topologies, account for reverse-recovery loss if used as a synchronous rectifier. The lead-free (Sn) finish supports peak reflow temperatures up to 260 C per IPC/JEDEC J-STD-020.
This page synthesizes distributor pricing, drop-in TrenchFET alternatives, and practical PCB thermal guidance not found in the manufacturer datasheet alone.
Alternativas drop-in para SUM60061EL-GE3 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
SUM60061EL-E3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SQM50061EL-GE3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SUM70101EL-GE3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SIHP065N60E-GE3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
SUM60061EL-GE3 Classificações máximas e características elétricas
| Part Number | SUM60061EL-GE3 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET SUM6xxxx (P-channel) |
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -80 V |
| Continuous Drain Current (ID, Tc=25C) | -150 A |
| Power Dissipation (PD, Tc=25C) | 375 W |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Faixa de temperatura de operação | -55 C to +175 C |
| Encapsulamento | TO-263 (D2PAK), surface mount |
| Tipo de montagem | Surface Mount with exposed tab |
| Status RoHS | Compliant (lead-free and halogen-free) |
| Nível MSL | 1 (unlimited) |
| Suffix Designation | -GE3 indicates lead-free + halogen-free finish |
Configuração de pinos do SUM60061EL-GE3
| Pino 1 | GATE — Gate drive input; pull to source to turn OFF, drive negative to turn ON |
| Pino 2 | DRAIN — Drain terminal; electrically connected to the exposed metal tab |
| Pino 3 | SOURCE — Source terminal; reference for gate drive |
Área de Operação Segura (DC, Tj=175C)
Aplicações típicas
SUM60061EL-GE3 é adequado para 6 aplicaçãos: 48 V Power OR-ing and Redundancy, Battery Protection and Load Switch, Hot-Swap and Inrush Limiting, Synchronous Rectifier in Industrial SMPS, Motor Drive Reverse-Battery Protection, Solar Combiner and Disconnect Switch.
48 V Power OR-ing and Redundancy
The SUM60061EL-GE3's P-channel high-side configuration and 80 V VDS rating make it a natural fit for OR-ing two redundant 48 V telecom or server power feeds. Placed in series with each supply rail, the MOSFET blocks reverse current when one feed collapses, while its low RDS(on) at -10 V VGS minimizes steady-state voltage loss. Compared to using Schottky diodes, the P-channel MOSFET drops <100 mV at full load instead of 500+ mV, recovering 4-5% of system efficiency. The TO-263 tab bonds directly to PCB copper, sinking OR-ing fault transients without requiring external heatsinking.
Recomendado
Battery Protection and Load Switch
The SUM60061EL-GE3 operates as a low-loss battery disconnect switch in 48 V eMobility, forklift, and UPS battery packs. Its 150 A continuous current rating handles peak inverter draw, while the P-channel topology keeps the gate drive referenced to ground, eliminating isolated gate drivers. The 80 V VDS rating covers 48 V nominal packs with margin for load-dump transients up to 65 V. Reverse-battery protection is built in because the P-channel body diode blocks negative VDS by default.
Recomendado
Hot-Swap and Inrush Limiting
In hot-swap controllers for 48 V server backplanes, the SUM60061EL-GE3 acts as the main pass element carrying inrush current during board insertion. The P-channel high-side switch allows a simple ground-referenced gate ramp circuit to control turn-on, and the 375 W power-dissipation rating absorbs the inrush energy as board capacitance charges. Compared to N-channel hot-swap FETs, no charge pump is needed, reducing BOM cost. Designers add a gate-source Zener (typically 12 V) to protect VGS during transient events.
Recomendado
Synchronous Rectifier in Industrial SMPS
On the secondary side of 48 V-input isolated DC-DC converters, the SUM60061EL-GE3 replaces Schottky rectifiers to cut conduction loss by 50-70%. Although P-channel MOSFETs are less common than N-channel synchronous rectifiers, they shine in low-side or non-isolated secondary topologies where gate-drive simplicity matters. The 80 V VDS rating comfortably handles the reflected secondary voltage plus ringing from the primary-side switching. Thermal management is straightforward with the TO-263 tab bonded to a 1+ square-inch copper pour.
Recomendado
Motor Drive Reverse-Battery Protection
BLDC and brushed DC motor drives operating from 24-60 V battery rails use the SUM60061EL-GE3 as a reverse-polarity protection element in series with the main bus. The P-channel MOSFET is OFF during normal operation and only carries the body-diode forward drop, then turns ON via a pull-up resistor and gate clamp once polarity is verified. This eliminates the 0.5-1.0 V loss of a Schottky reverse-protection diode while adding <50 mV drop at full motor current. The -GE3 halogen-free finish supports automotive and industrial environmental specs.
Recomendado
Solar Combiner and Disconnect Switch
Photovoltaic combiner boxes and DC disconnect switches up to 80 V string voltage use the SUM60061EL-GE3 as the main isolation element. Its high 150 A rating handles full string current, while the P-channel configuration permits a simple manual switch with a pull-down resistor to drive the gate. The TO-263 package withstands outdoor enclosure temperatures when derated per the SOA curve. Designers should add a TVS across VDS to clamp inductive kickback from long string cables.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para SUM60061EL-GE3 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | SUM60061EL-E3 | SQM50061EL-GE3 | SUM70101EL-GE3 |
|---|---|---|---|---|
| Brand | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -80 V | -80 V | -60 V | -100 V |
| Finish / Suffix | Lead-free + Halogen-free (-GE3) | Lead-free only (-E3) | Lead-free + Halogen-free (-GE3) | Lead-free + Halogen-free (-GE3) |
| RoHS / Halogen-Free | Yes / Yes | Yes / No | Yes / Yes | Yes / Yes |
Principais diferenciais
- Lead-free AND halogen-free finish (-GE3) supports strict environmental specs (vs SUM60061EL-E3)
- Highest VDS headroom in the SUM6xxxx P-channel family (vs SQM50061EL-GE3)
- Balanced VDS/PD rating for high-current switching (vs SUM70101EL-GE3)
Notas de projeto
Estimated: at VDS=-40V and ID=-30A continuous (typical PCB-mounted high-side switch), the SUM60061EL-GE3 dissipates approximately 30W * RDS(on). With TO-263 junction-to-ambient thermal resistance typically 40-62 C/W on 1 sq-in of copper, junction temperature can rise 100C+ above ambient. Design at least 2 sq-in of 2 oz copper on the drain tab, or use multiple thermal vias to inner planes, to keep Tj below 125C in production. Do not design to the headline 150A rating - that figure assumes perfect infinite heatsink at Tc=25C, which is unrealistic on FR-4.
Solder the exposed drain tab to a continuous copper pour using a thermal pad array of at least 6x6 vias on 0.5mm pitch. Stitch vias from the top copper directly to inner power-plane layers to spread heat laterally. Keep the gate-trace width below 0.3mm to minimize parasitic gate inductance, and place the gate pull-down resistor (typically 10k-100k) within 5mm of the gate pin. For high dv/dt applications, add a 10-100 ohm gate resistor to damp ringing from the gate-source capacitance and source-lead inductance.
Do not exceed VGS of +/- 20V; a gate-source Zener (typically 12V) is essential protection in high-side P-channel circuits because the gate can ring above source during switching transients. Verify that VDS worst-case (including load-dump or inductive kickback) does not exceed 80V - add a TVS across drain-to-source for inductive loads like motors and solenoids. Finally, do not parallel P-channel MOSFETs without separate gate resistors; otherwise one device may take all the current due to VGS(th) mismatch.
Informações de conformidade
-GE3 suffix per Vishay part-numbering convention designates lead-free + halogen-free finish; matte-tin plating rated for 260C peak reflow per IPC/JEDEC J-STD-020. Not AEC-Q100 qualified - use automotive-grade SUM/SQM parts explicitly marked -AUE3 or equivalent for vehicle applications.
