1ED44176N01FXUMA1 vs IRS2110SPBF Сравнение
Подробное сравнение бок о бок 1ED44176N01FXUMA1 от Infineon и IRS2110SPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
1ED44176N01FXUMA1 - 25V 1-Channel Low-Side Gate Driver IC | Infineon
1ED44176N01FXUMA1 ✓ Активен
Сравнение характеристик
| Параметр | 1ED44176N01FXUMA1 | IRS2110SPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,54 | $0,72 |
| Функция | Low-side gate driver with integrated OCP, FAULT, EN | — |
| Configuration | Non-inverting, single-channel, low-side | — |
| Number of Channels | 1 | — |
| Input Compatibility | CMOS, TTL | — |
| VCC Supply Voltage Range | 4.5 V to 25 V | — |
| Peak Source Current (typ.) | 0.8 A | — |
| Peak Sink Current (typ.) | 1.75 A | — |
| Propagation Delay (typ.) | 50 ns | 120 ns |
| OCP Threshold Tolerance | ±5% | — |
| OCP Reference | 800 mV to 1.2 V (per LCSC listing) | — |
| Enable Input | Yes (EN, active-high) | — |
| Fault Output | Yes (FAULT, open-drain) | — |
| Рабочая температура | -40 C to +125 C | — |
| Корпус | 8-pin PG-DSO8 (SOIC-8) | 16-SOIC (SOIC-16 W) |
| Тип монтажа | Surface Mount | Surface Mount |
| Family | EiceDRIVER | — |
| Статус RoHS | Compliant | Compliant (Pb-free) |
| Уровень MSL | [DATA_NEEDED: MSL level] | 3 |
| Driver Type | — | High and Low Side, Half-Bridge |
| Number of Drivers | — | 2 |
| Выходная конфигурация | — | Non-Inverting |
| Peak Source/Sink Current | — | 2.5 A / 2.5 A |
| Offset Voltage (High-Side) | — | Up to 500 V |
| Logic Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Supply Voltage (VBS) | — | 10 V to 20 V (25 V abs max) |
| Rise Time (typ.) | — | 25 ns |
| Fall Time (typ.) | — | 17 ns |
| Undervoltage Lockout | — | Yes (VCC and VBS) |
| Input Logic Compatibility | — | TTL / CMOS with hysteresis |
| Диапазон рабочих температур | — | -40 C to +125 C |