BSC040N10NS5ATMA1 vs IPB017N10N5LFATMA1 Сравнение
Подробное сравнение бок о бок BSC040N10NS5ATMA1 от Infineon и IPB017N10N5LFATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC040N10NS5ATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,93 | $4,05 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| Корпус | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C | -55C to +175C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| Статус RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Linear FET |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Корпус / Типоразмер | — | PG-TO263-7 (D2PAK-7), surface mount |
| Уровень MSL | — | 1 (unlimited) |
| Avalanche Rated | — | Yes |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |