BSC0504NSIATMA1 vs BSC011N03LSIATMA1 Сравнение
Подробное сравнение бок о бок BSC0504NSIATMA1 от Infineon и BSC011N03LSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC0504NSIATMA1 | BSC011N03LSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $1,32 |
| Тип транзистора | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Корпус | PG-TDSON-8-6 | PG-TDSON-8-7 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Количество выводов | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Пороговое напряжение затвора | [DATA_NEEDED: gate threshold voltage] | — |
| Тепловое сопротивление | [DATA_NEEDED: thermal resistance] | — |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Статус RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 30 V |
| Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM value] |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |
| Рабочая температура перехода | — | -55 °C to +150 °C |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |