BSC0901NSATMA1 vs BSC066N06NSATMA1 Сравнение
Подробное сравнение бок о бок BSC0901NSATMA1 от Infineon и BSC066N06NSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC0901NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 5 60 V trench-gate |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 1.7 V (typ) |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Диапазон рабочих температур | -55C to +150C | — |
| Корпус | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-6 (TDSON EP) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень чувствительности к влаге (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| Статус RoHS | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Total Gate Charge (Qg) | — | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Рабочая температура перехода | — | -55°C to +150°C |
| Уровень MSL | — | 1 |