BSC118N10NSGATMA1 vs BSC123N08NS3GATMA1 Сравнение
Подробное сравнение бок о бок BSC118N10NSGATMA1 от Infineon и BSC123N08NS3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC118N10NSGATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| Корпус | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура перехода | -55 C to +150 C | -55C to +150C |
| Technology | Trench MOSFET | — |
| Lead Plating | Pb-free | — |
| Статус RoHS | Compliant | Compliant with exemption |
| Без галогенов | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | — | Yes (AEC-Q101) |