BSZ024N04LS6ATMA1 vs IPD038N06NF2SATMA1 Сравнение
Подробное сравнение бок о бок BSZ024N04LS6ATMA1 от Infineon и IPD038N06NF2SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSZ024N04LS6ATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,46 | $0,95 |
| Тип транзистора | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Ta) | 24 A | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Pulsed Drain Current (I_DM) | 130 A | — |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ | — |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | — |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | — |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | — |
| Input Capacitance (C_iss) | 1.8 nF | — |
| Output Capacitance (C_oss) | 19 pF | — |
| Power Dissipation (P_D, Ta) | 2.5 W | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| Рабочая температура перехода | -55°C to +175°C | -55°C to +175°C |
| Корпус | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount, top-side drain pad | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Continuous Drain Current (ID) at TA=25°C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 3.85 mΩ max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Gate Charge (Qg) at VGS=10V | — | 68 nC |
| Input Capacitance (Ciss) | — | 6700 pF |
| Output Capacitance (Coss) | — | 670 pF |
| Reverse Transfer Capacitance (Crss) | — | 43 pF |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| Channel Mode | — | Enhancement |