BSZ060NE2LSATMA1 vs BSC011N03LSIATMA1 Сравнение
Подробное сравнение бок о бок BSZ060NE2LSATMA1 от Infineon и BSC011N03LSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSZ060NE2LSATMA1 | BSC011N03LSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,27 | $1,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | [DATA_NEEDED: pulsed IDM value] |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Диапазон рабочих температур | -55C to +150C | — |
| Корпус | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-7 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 30 V |
| Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |
| Рабочая температура перехода | — | -55 °C to +150 °C |