BSZ070N08LS5ATMA1 vs BSZ011NE2LS5IATMA1 Сравнение
Подробное сравнение бок о бок BSZ070N08LS5ATMA1 от Infineon и BSZ011NE2LS5IATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSZ070N08LS5ATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | 1.0 V to 2.0 V (typical 1.5 V) |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| Рабочая температура перехода | -55 °C to +150 °C | — |
| Корпус | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020, unleaded reflow) | MSL1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| Диапазон рабочих температур | — | -55°C to +150°C |
| Lead-Free | — | Yes |
| Без галогенов | — | Yes |