EP2SGX90EF1152C3ES vs EP2SGX60EF1152C4 Сравнение
Подробное сравнение бок о бок EP2SGX90EF1152C3ES от Intel и EP2SGX60EF1152C4 от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ Последняя закупкаIntel
EP2SGX60EF1152C4 - Stratix II GX FPGA, 60K LE, 1152-FBGA | Intel
EP2SGX60EF1152C4 ⚠ Последняя закупкаСравнение характеристик
| Параметр | EP2SGX90EF1152C3ES | EP2SGX60EF1152C4 |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Последняя закупка | Последняя закупка |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2.050,00 | $1.067,86 |
| Family | Stratix II GX | — |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | — |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | 534 |
| Корпус | 1152-BBGA (FineLine BGA, 35x35 mm) | — |
| Speed Grade | C3 | C4 (commercial) |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | 1.15 V to 1.25 V |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | — |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Тип монтажа | Surface Mount (BGA) | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Device Family | — | Stratix II GX |
| Logic Elements (LE) | — | 60,440 |
| Logic Array Blocks / CLBs | — | 3022 |
| Total RAM Bits | — | 2,544,192 |
| Number of LABs/CLBs | — | 3022 |
| Package Type | — | 1152-BBGA, FC-FBGA |
| Package Pitch | — | 1.0 mm |
| Internal Frequency | — | 717 MHz (max) |
| Propagation Delay | — | [DATA_NEEDED: propagation delay exact value] |
| Process Technology | — | 90 nm CMOS |
| Рабочая температура | — | 0C to 85C (commercial) |