IAUC100N04S6N028ATMA1 vs IAUC50N08S5L096ATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N04S6N028ATMA1 от Infineon и IAUC50N08S5L096ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IAUC100N04S6N028ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,42 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Диапазон рабочих температур | -55 °C to +175 °C | -55°C to +175°C |
| Корпус | PG-TDSON-8 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Статус RoHS | Compliant | Compliant |
| Product Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| Уровень MSL | — | [DATA_NEEDED: MSL level] |