IAUC100N10S5L040ATMA1 vs IAUC60N04S6L030HATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N10S5L040ATMA1 от Infineon и IAUC60N04S6L030HATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ АктивенInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC100N10S5L040ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,94 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | — |
| Тип транзистора | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-State Resistance RDS(on) max | 4 mOhm | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Continuous Power Dissipation (Tc) | 167 W | — |
| Корпус | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55 C to +175 C (junction) | — |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Avalanche Tested | 100% production avalanche tested | — |
| AOI Compatibility | Feasible for automatic optical inspection | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Статус RoHS | — | Compliant |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |