IAUC60N10S5L110ATMA1 vs IAUCN04S7N015GATMA1 Сравнение
Подробное сравнение бок о бок IAUC60N10S5L110ATMA1 от Infineon и IAUCN04S7N015GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IAUC60N10S5L110ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,66 | $2,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Корпус | PG-TDSON-8-33 (TDSON-8 Single) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Тип монтажа | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Диапазон рабочих температур | [DATA_NEEDED: min/max operating temperature] | — |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Уровень MSL | 1 (per LCSC datasheet snippet) | 1 (per JEDEC J-STD-020) |
| Без галогенов | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Рабочая температура перехода | — | -55C to +175C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Статус RoHS | — | Compliant |