IAUCN04S7L050HATMA1 vs IAUC60N10S5L110ATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7L050HATMA1 от Infineon и IAUC60N10S5L110ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7L050HATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,83 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS™-5 |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-33 (TDSON-8 Single) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 (per LCSC datasheet snippet) |
| Статус RoHS | Compliant | — |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | — |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Диапазон рабочих температур | — | [DATA_NEEDED: min/max operating temperature] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Без галогенов | — | Yes (per Infineon product classification) |
| Customer Info / FGR | — | J52 (per Infineon product data) |