IGI65D1414A3MSXUMA1 vs IGLR70R270D2SXUMA1 Сравнение
Подробное сравнение бок о бок IGI65D1414A3MSXUMA1 от Infineon и IGLR70R270D2SXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ АктивенInfineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ АктивенСравнение характеристик
| Параметр | IGI65D1414A3MSXUMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,95 | $2,13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ HEMT | CoolGaN™ G5 |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | — |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Корпус | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TSON-8-8 (ThinPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| Уровень MSL | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Статус RoHS | — | Compliant |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |