IPC100N04S5L1R5ATMA1 vs IAUA180N04S5N012AUMA1 Сравнение
Подробное сравнение бок о бок IPC100N04S5L1R5ATMA1 от Infineon и IAUA180N04S5N012AUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ АктивенInfineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ АктивенСравнение характеристик
| Параметр | IPC100N04S5L1R5ATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $1,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Диапазон рабочих температур | -55C to +175C | -55 °C to +175 °C (Tj) |
| Корпус | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (260C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| Статус RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Part Number | — | IAUA180N04S5N012AUMA1 |
| Series | — | OptiMOS-5 40 V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 180 A (Tc) |
| Maximum Power Dissipation (PD) | — | 125 W (Tc) |
| R_DS(on) (max) | — | 1.2 mΩ at 10 V VGS |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Technology | — | OptiMOS-5 Trench |
| Automotive Qualification | — | AEC-Q101 |