IPC100N04S5L1R5ATMA1 vs IAUA210N10S5N024AUMA1 Сравнение
Подробное сравнение бок о бок IPC100N04S5L1R5ATMA1 от Infineon и IAUA210N10S5N024AUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ АктивенInfineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ АктивенСравнение характеристик
| Параметр | IPC100N04S5L1R5ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Диапазон рабочих температур | -55C to +175C | -55°C to +175°C (TJ) |
| Корпус | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-4 (7×8 mm² sTOLL) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | — |
| Статус RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Technology | — | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tj | — | 210 A |
| Continuous Drain Current (ID) @ TC=25°C | — | [DATA_NEEDED: ID at TC=25°C] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25°C | — | 238 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| Avalanche Energy Rated | — | Yes (per datasheet) |