IPD30N06S2L13ATMA4 vs IPD90P04P4L04ATMA2 Сравнение
Подробное сравнение бок о бок IPD30N06S2L13ATMA4 от Infineon и IPD90P04P4L04ATMA2 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ Активен
Сравнение характеристик
| Параметр | IPD30N06S2L13ATMA4 | IPD90P04P4L04ATMA2 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $1,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | P-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | -40 V |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Корпус | PG-TO252-3-11 (DPAK) | PG-TO252-3-313 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | — |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Число выводов | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Part Number | — | IPD90P04P4L04ATMA2 |
| Family | — | OptiMOS-P2 |
| Continuous Drain Current (Id) at Tc=25C | — | -90 A |
| Power Dissipation (Pd) at Tc=25C | — | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | — | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | — | 175 C |
| Диапазон рабочих температур | — | -55 C to +175 C |
| Количество выводов | — | 3 (2 + Tab) |
| Статус RoHS | — | Compliant |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |