IPT007N06NATMA1 vs BSS316NH6327XTSA1 Сравнение
Подробное сравнение бок о бок IPT007N06NATMA1 от Infineon и BSS316NH6327XTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPT007N06NATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,84 | $0,13 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Диапазон рабочих температур | -55 C to +175 C (TJ) | — |
| Корпус | PG-HSOF-8-1 (TOLL) | PG-SOT23 (SOT-23-3) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Уровень MSL | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Без галогенов | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Диапазон рабочей температуры перехода | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| Automotive Qualification | — | AEC-Q101 qualified |