IQDH35N03LM5SCATMA1 vs IQD020N10NM5CGSCATMA1 Сравнение
Подробное сравнение бок о бок IQDH35N03LM5SCATMA1 от Infineon и IQD020N10NM5CGSCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ АктивенInfineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQDH35N03LM5SCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,05 | $3,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench, shielded-gate) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Корпус | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55 C to +175 C | — |
| Уровень MSL | 1 (unlimited) | — |
| Статус RoHS | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Рабочая температура перехода | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |