IQE008N03LM5ATMA1 vs BSC011N03LSATMA1 Сравнение
Подробное сравнение бок о бок IQE008N03LM5ATMA1 от Infineon и BSC011N03LSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE008N03LM5ATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,94 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | 1.0 V to 2.2 V (typ 1.6 V) |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Корпус | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TDSON-8-1 (SuperSO8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55°C to +150°C (typical MOSFET junction rating) | -55C to +150C |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | — |
| Статус RoHS | Compliant (per LCSC listing) | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL level] | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Pulsed Drain Current (IDM) | — | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |