IQE008N03LM5CGATMA1 vs IQE036N08NM6CGATMA1 Сравнение
Подробное сравнение бок о бок IQE008N03LM5CGATMA1 от Infineon и IQE036N08NM6CGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE008N03LM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,74 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25C | 253 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | — |
| Gate-Source Voltage (VGS) Max | +/-16 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | — |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 89 W | — |
| Диапазон рабочих температур | -55C to +150C (junction) | -55 C to +175 C (junction, Tj) |
| Корпус | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | — |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Уровень MSL | — | MSL1 (per JEDEC J-STD-020) |
| Статус RoHS | — | Compliant |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |