IQE008N03LM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 Сравнение
Подробное сравнение бок о бок IQE008N03LM5CGSCATMA1 от Infineon и IQE220N15NM5CGSCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ АктивенInfineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE008N03LM5CGSCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,10 | $2,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4.6 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Диапазон рабочих температур | -55C to +150C (junction) | -55C to +150C (junction) |
| Корпус | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9 (Source-Down) |
| Тип монтажа | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5, Source-Down |
| Polarity | N-Channel | — |
| Количество выводов | 9 (WHTFN with exposed thermal pads) | — |
| Уровень MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Статус RoHS | Compliant | Compliant |
| Без галогенов | Yes (Infineon standard for OptiMOS 5) | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |